Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye
Nature Nanotechnology 15 (7), 585-591, 2020
107 2020 Asymmetric Metal/α-In2 Se3 /Si Crossbar Ferroelectric Semiconductor Junction M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye
ACS nano 15 (3), 5689-5695, 2021
71 2021 Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization C Niu, G Qiu, Y Wang, Z Zhang, M Si, W Wu, PD Ye
Physical Review B 101 (20), 205414, 2020
43 2020 Ultrathin InGaO thin film transistors by atomic layer deposition J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin, DY Peide
IEEE Electron Device Letters 44 (2), 273-276, 2022
36 2022 Extremely thin amorphous indium oxide transistors A Charnas, Z Zhang, Z Lin, D Zheng, J Zhang, M Si, PD Ye
Advanced Materials 36 (9), 2304044, 2024
31 2024 Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition Z Zhang, Y Hu, Z Lin, M Si, A Charnas, K Cho, DY Peide
IEEE Transactions on Electron Devices 69 (1), 231-236, 2021
29 2021 A gate-all-around inO nanoribbon FET with near 20 mA/m drain current Z Zhang, Z Lin, PY Liao, V Askarpour, H Dou, Z Shang, A Charnas, M Si, ...
IEEE Electron Device Letters 43 (11), 1905-1908, 2022
25 2022 Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio A Charnas, Z Lin, Z Zhang, PD Ye
Applied Physics Letters 119 (26), 2021
25 2021 Nanometer-thick oxide semiconductor transistor with ultra-high drain current Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ...
ACS nano 16 (12), 21536-21545, 2022
23 2022 Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition J Zhang, Z Lin, Z Zhang, K Xu, H Dou, B Yang, A Charnas, D Zheng, ...
IEEE Transactions on Electron Devices 70 (12), 6651-6657, 2023
20 2023 First demonstration of BEOL-compatible ultrathin atomiclayer-deposited InZnO transistors with GHz operation and record high bias-stress stability D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ...
2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022
20 2022 Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, PY Liao, D Zemlyanov, ...
Applied Physics Letters 121 (17), 2022
20 2022 Realization of maximum 2 A/mm drain current on top-gate atomic-layer-thin indium oxide transistors by thermal engineering PY Liao, M Si, Z Zhang, Z Lin, DY Peide
IEEE Transactions on Electron Devices 69 (1), 147-151, 2021
20 2021 Ultrahigh Bias Stability of ALD In2 O3 FETs Enabled by High Temperature O2 Annealing Z Zhang, Z Lin, C Niu, M Si, MA Alam, DY Peide
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
15 2023 Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2 O3 FETs Toward Monolithic 3-D Integration PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ...
IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023
13 2023 First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10 11, SS of … J Zhang, Z Zhang, Z Lin, K Xu, H Dou, B Yang, X Zhang, H Wang, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
12 2023 Reliability of Atomic-Layer-Deposited Gate-All-Around In2 O3 Nano-Ribbon Transistors with Ultra-High Drain Currents Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, ...
2022 International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2022
11 2022 Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2 O3 FETs Using a Thermal Adhesion Layer PY Liao, K Khot, S Alajlouni, M Snure, J Noh, M Si, Z Zhang, A Shakouri, ...
IEEE Transactions on Electron Devices 70 (1), 113-120, 2022
8 2022 Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility Z Zhang, Z Lin, M Si, D Zhang, H Dou, Z Chen, A Charnas, H Wang, ...
Applied Physics Letters 120 (20), 2022
8 2022 Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In C Niu, Z Lin, V Askarpour, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, ...
IEEE Transactions on Electron Devices, 2024
6 2024 