| MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019 | 336 | 2019 |
| MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 170 | 2019 |
| Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020 | 136 | 2020 |
| Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020 | 121 | 2020 |
| MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020 | 98 | 2020 |
| High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium L Meng, Z Feng, AFMAU Bhuiyan, H Zhao Crystal Growth & Design 22 (6), 3896-3904, 2022 | 79 | 2022 |
| Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020 | 79 | 2020 |
| Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020 | 63 | 2020 |
| Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters Z Feng, MR Karim, H Zhao APL Materials 7 (2), 2019 | 62 | 2019 |
| Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020 | 61 | 2020 |
| Mg acceptor doping in MOCVD (010) β-Ga2O3 Z Feng, AFM Bhuiyan, NK Kalarickal, S Rajan, H Zhao Applied Physics Letters 117 (22), 2020 | 60 | 2020 |
| High-temperature low-pressure chemical vapor deposition of β-Ga2O3 Y Zhang, Z Feng, MR Karim, H Zhao Journal of Vacuum Science & Technology A 38 (5), 2020 | 60 | 2020 |
| Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021 | 55 | 2021 |
| MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020 | 55 | 2020 |
| Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021 | 53 | 2021 |
| Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ... IEEE Electron Device Letters 43 (12), 2029-2032, 2022 | 45 | 2022 |
| β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ... Applied Physics Letters 121 (5), 2022 | 44 | 2022 |
| Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films Y Song, P Ranga, Y Zhang, Z Feng, HL Huang, MD Santia, SC Badescu, ... ACS applied materials & interfaces 13 (32), 38477-38490, 2021 | 40 | 2021 |
| Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020 | 40 | 2020 |
| Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films MR Karim, Z Feng, H Zhao Crystal Growth & Design 18 (8), 4495-4502, 2018 | 30 | 2018 |
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUПодтвержден адрес электронной почты в домене osu.edu
