Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2 V Talesara, Y Zhang, VGT Vangipuram, H Zhao, W Lu
Applied Physics Letters 122 (12), 2023
19 2023 Discovery of a Robust P ‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5 O8 K Zhang, VGT Vangipuram, HL Huang, J Hwang, H Zhao
Advanced Electronic Materials 11 (1), 2300550, 2025
10 2025 Investigation of carbon incorporation in laser-assisted MOCVD of GaN Y Zhang, VG Thirupakuzi Vangipuram, K Zhang, H Zhao
Applied Physics Letters 122 (16), 2023
9 2023 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management Y Xu, VGT Vangipuram, V Telasara, J Cheng, Y Zhang, T Hashimoto, ...
Applied Physics Letters 123 (14), 142105, 2023
6 2023 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management Y Xu, VGT Vangipuram, V Telasara, J Cheng, Y Zhang, T Hashimoto, ...
arXiv preprint arXiv:2303.15646, 2023
6 2023 450 nm Gallium Nitride alternating current light-emitting diode M Hartensveld, B Melanson, VT Vangipuram, J Zhang
IEEE Photonics Journal 12 (6), 1-6, 2020
6 2020 Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN K Zhang, C Hu, AFMAU Bhuiyan, M Zhu, VGT Vangipuram, MR Karim, ...
Crystal Growth & Design 22 (8), 5004-5011, 2022
3 2022 Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface K Zhang, VG Thirupakuzi Vangipuram, C Chae, J Hwang, H Zhao
Applied Physics Letters 124 (12), 2024
1 2024 Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits K Zhang, C Hu, VG Thirupakuzi Vangipuram, L Meng, C Chae, M Zhu, ...
Journal of Vacuum Science & Technology B 41 (6), 2023
1 2023 Design of InGaN-ZnSnGa2N4 quantum wells for high-efficiency amber light emitting diodes K Zhang, C Hu, VG Thirupakuzi Vangipuram, K Kash, H Zhao
Journal of Vacuum Science & Technology A 41 (3), 2023
1 2023 Electrical and Structural Properties of In-Situ MOCVD Grown Al AFM Bhuiyan, L Meng, DS Yu, S Dhara, HL Huang, VGT Vangipuram, ...
arXiv preprint arXiv:2501.10628, 2025
2025 Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation M Daeumer, JH Yoo, Z Xu, M Cho, M Bakhtiary-Noodeh, T Detchprohm, ...
Scientific Reports 15 (1), 333, 2025
2025 Atomic Scale Defect Formation and Evolution at LiGa5 O8 /β-Ga2 O3 and Ga2 O3 /Ni/Au Interfaces C Chae, K Zhang, D Ramdin, VGT Vangipuram, LJ Brillson, H Zhao, ...
Microscopy and Microanalysis 30 (Supplement_1), ozae044. 529, 2024
2024 Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2 VG Thirupakuzi Vangipuram, K Zhang, H Zhao
Journal of Vacuum Science & Technology B 42 (3), 2024
2024 Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates VG Thirupakuzi Vangipuram, K Zhang, H Zhao
physica status solidi (RRL)–Rapid Research Letters 18 (3), 2300318, 2024
2024 Discovery of a Robust P-Type Ultrawide Bandgap Oxide Semiconductor: LiGa K Zhang, VGT Vangipuram, HL Huang, J Hwang, H Zhao
2023 Development of a Monolithically Integrated GaN Nanowire Memory Device VGT Vangipuram
Rochester Institute of Technology, 2021
2021 Development of a Monolithically Integrated GaN Nanowire Memory Device VG Thirupakuzi Vangipuram
2021 Fabrication of AlGaN/GaN High Electron Mobility Transistors VGT Vangipuram
GaN 3 (6), 7, 0
