| Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ... Nature electronics 4 (8), 595-603, 2021 | 213 | 2021 |
| A high current density direct‐current generator based on a moving van der Waals Schottky diode S Lin, Y Lu, S Feng, Z Hao, Y Yan Advanced Materials 31 (7), 1804398, 2019 | 151 | 2019 |
| Gap‐Mode Surface‐Plasmon‐Enhanced Photoluminescence and Photoresponse of MoS2 ZQ Wu, JL Yang, NK Manjunath, YJ Zhang, SR Feng, YH Lu, JH Wu, ... Advanced Materials 30 (27), 1706527, 2018 | 146 | 2018 |
| High performance graphene/semiconductor van der Waals heterostructure optoelectronic devices S Lin, Y Lu, J Xu, S Feng, J Li Nano Energy 40, 122-148, 2017 | 124 | 2017 |
| Broadband surface plasmon resonance enhanced self-powered graphene/GaAs photodetector with ultrahigh detectivity Y Lu, S Feng, Z Wu, Y Gao, J Yang, Y Zhang, Z Hao, J Li, E Li, H Chen, ... Nano Energy 47, 140-149, 2018 | 108 | 2018 |
| The interaction between quantum dots and graphene: the applications in graphene‐based solar cells and photodetectors J Wu, Y Lu, S Feng, Z Wu, S Lin, Z Hao, T Yao, X Li, H Zhu, S Lin Advanced Functional Materials 28 (50), 1804712, 2018 | 95 | 2018 |
| Co-harvesting light and mechanical energy based on dynamic metal/perovskite Schottky junction Z Hao, T Jiang, Y Lu, S Feng, R Shen, T Yao, Y Yan, YM Yang, Y Lu, S Lin Matter 1 (3), 639-649, 2019 | 91 | 2019 |
| Direct-current generator based on dynamic PN junctions with the designed voltage output Y Lu, Z Hao, S Feng, R Shen, Y Yan, S Lin Iscience 22, 58-69, 2019 | 80 | 2019 |
| Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density Over 1000 W m−2 S Lin, R Shen, T Yao, Y Lu, S Feng, Z Hao, H Zheng, Y Yan, E Li Advanced Science 6 (24), 1901925, 2019 | 62 | 2019 |
| Polarized water driven dynamic PN junction-based direct-current generator Y Lu, Y Yan, X Yu, X Zhou, S Feng, C Xu, H Zheng, Z Yang, L Li, K Liu, ... Research, 2021 | 48 | 2021 |
| Tunable dynamic black phosphorus/insulator/Si heterojunction direct-current generator based on the hot electron transport Y Lu, S Feng, R Shen, Y Xu, Z Hao, Y Yan, H Zheng, X Yu, Q Gao, ... Research, 2019 | 47 | 2019 |
| GaN power integration technology and its future prospects J Wei, Z Zheng, G Tang, H Xu, G Lyu, L Zhang, J Chen, M Hua, S Feng, ... IEEE Transactions on Electron Devices, 2023 | 40 | 2023 |
| IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs K Zhong, J Wei, J He, S Feng, Y Wang, S Yang, KJ Chen IEEE Transactions on Industrial Electronics 69 (8), 8387-8395, 2021 | 36 | 2021 |
| Quasi-industrially produced large-area microscale graphene flakes assembled film with extremely high thermoelectric power factor S Feng, T Yao, Y Lu, Z Hao, S Lin Nano Energy 58, 63-68, 2019 | 36 | 2019 |
| Direct current electricity generation from dynamic polarized water–semiconductor Interface Y Yan, X Zhou, S Feng, Y Lu, J Qian, P Zhang, X Yu, Y Zheng, F Wang, ... The Journal of Physical Chemistry C 125 (26), 14180-14187, 2021 | 32 | 2021 |
| Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride J Chen, J Zhao, S Feng, L Zhang, Y Cheng, H Liao, Z Zheng, X Chen, ... Advanced Materials 35 (12), 2208960, 2023 | 31 | 2023 |
| SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs L Zhang, Z Zheng, Y Cheng, YH Ng, S Feng, W Song, T Chen, KJ Chen 2021 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2021 | 28 | 2021 |
| Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency S Feng, B Dong, Y Lu, L Yin, B Wei, J Wang, S Lin Nano Energy 60, 836-840, 2019 | 28 | 2019 |
| Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs Z Zheng, L Zhang, W Song, T Chen, S Feng, YH Ng, J Sun, H Xu, S Yang, ... IEEE Electron Device Letters 42 (11), 1584-1587, 2021 | 25 | 2021 |
| Normally-OFF p-GaN gate double-channel HEMT with suppressed hot-electron-induced dynamic on-resistance degradation H Liao, Z Zheng, T Chen, L Zhang, Y Cheng, S Feng, YH Ng, L Chen, ... IEEE Electron Device Letters 43 (9), 1424-1427, 2022 | 21 | 2022 |
Kevin J. ChenHong Kong University of Science and TechnologyПодтвержден адрес электронной почты в домене ust.hk
