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Adha Sukma Aji
Adha Sukma Aji
Подтвержден адрес электронной почты в домене imass.nagoya-u.ac.jp
Название
Процитировано
Процитировано
Год
High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
AS Aji, P Solís‐Fernández, HG Ji, K Fukuda, H Ago
Advanced Functional Materials 27 (47), 1703448, 2017
1402017
Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire
K Suenaga, HG Ji, YC Lin, T Vincent, M Maruyama, AS Aji, Y Shiratsuchi, ...
ACS nano 12 (10), 10032-10044, 2018
922018
Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching
HG Ji, YC Lin, K Nagashio, M Maruyama, P Solís-Fernández, A Sukma Aji, ...
Chemistry of Materials 30 (2), 403-411, 2018
792018
High output voltage generation of over 5 V from liquid motion on single-layer MoS2
AS Aji, R Nishi, H Ago, Y Ohno
Nano Energy 68, 104370, 2020
682020
Two-step synthesis and characterization of vertically stacked SnS–WS 2 and SnS–MoS 2 p–n heterojunctions
AS Aji, M Izumoto, K Suenaga, K Yamamoto, H Nakashima, H Ago
Physical Chemistry Chemical Physics 20 (2), 889-897, 2018
362018
van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS 2
HG Ji, M Maruyama, AS Aji, S Okada, K Matsuda, H Ago
Physical Chemistry Chemical Physics 20 (47), 29790-29797, 2018
142018
Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al 2 O 3 buffer layer
AS Aji, Y Darma
AIP Conference Proceedings 1586 (1), 198-201, 2014
42014
Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High‐K Material as Tunnel Oxide
AS Aji, MI Nugraha, Yudhistira, F Rahayu, Y Darma
AIP Conference Proceedings 1415 (1), 196-199, 2011
42011
Simulation of quantum dot floating gate MOSFET memory performance using various high-k material as tunnel oxide
AS Aji, Y Darma
AIP Conference Proceedings 1454 (1), 195-198, 2012
32012
Simulation of charge-trapping effect on floating gate Si/Ge/Si quantum dots MOSFET memory with high-к tunnel oxide
AS Aji, Y Darma
2013 3rd International Conference on Instrumentation, Communications …, 2013
22013
Quantum Size Effect Simulation on the Electronic Characteristic of Silicon Based Single Electron Transistor
MI Nugraha, AS Aji, Yudhistira, F Rahayu, Y Darma
AIP Conference Proceedings 1415 (1), 98-101, 2011
22011
HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique
AS Aji, Y Darma
AIP Conference Proceedings 1589 (1), 191-194, 2014
12014
Time dependence of carbon film deposition on using DC unbalanced magnetron sputtering
H Alfiadi, AS Aji, Y Darma
AIP Conference Proceedings 1586 (1), 97-100, 2014
12014
MoS 2 Nanogenerators: Harvesting Energy from Droplet Movement.
AS Aji, Y Ohno
AAPPS Bulletin 30 (4), 2020
2020
Large voltage generator from water movement by single-layer MoS2
AS Aji, R Nishi, H Ago, Y Ohno
JSAP Annual Meetings Extended Abstracts The 66th JSAP Spring Meeting 2019 …, 2019
2019
High Performance Flexible Single-Layer WS2 Optoelectronics Devices Integrated with Multi-Layer Graphene Electrodes and Parylene-C Substrate
AS Aji, JH Goo, P Solis-Fernandez, K Fukuda, H Ago
JSAP Annual Meetings Extended Abstracts The 78th JSAP Autumn Meeting 2017 …, 2017
2017
Single-Layer WS2 Phototransistor with Multi-Layer Graphene Electrodes on a Flexible Parylene Substrate
AS Aji, T Shiiba, K Fukuda, H Ago
JSAP Annual Meetings Extended Abstracts The 63rd JSAP Spring Meeting 2016 …, 2016
2016
Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering
AS Aji, MF Sahdan, IB Hendra, P Dinari, Y Darma
AIP Conference Proceedings 1656 (1), 2015
2015
Carbon film deposition on using DC unbalanced magnetron sputtering
AS Aji, Y Darma
AIP Conference Proceedings 1554 (1), 93-96, 2013
2013
Back Matter for Volume 1454
K Basar, S Viridi
AIP Conference Proceedings 1454 (1), backmatter, 2012
2012
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