Recent advances in physical reservoir computing: A review G Tanaka, T Yamane, JB Héroux, R Nakane, N Kanazawa, S Takeda, ...
Neural Networks 115, 100-123, 2019
1890 2019 Carrier-transport-enhanced channel CMOS for improved power consumption and performance S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ...
IEEE transactions on electron devices 55 (1), 21-39, 2007
436 2007 Reservoir computing with spin waves excited in a garnet film R Nakane, G Tanaka, A Hirose
IEEE access 6, 4462-4469, 2018
217 2018 Device structures and carrier transport properties of advanced CMOS using high mobility channels S Takagi, T Tezuka, T Irisawa, S Nakaharai, T Numata, K Usuda, ...
Solid-State Electronics 51 (4), 526-536, 2007
184 2007 Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing Y Takamura, R Nakane, S Sugahara
Journal of Applied Physics 105 (7), 2009
165 2009 Gate dielectric formation and MIS interface characterization on Ge S Takagi, T Maeda, N Taoka, M Nishizawa, Y Morita, K Ikeda, ...
Microelectronic engineering 84 (9-10), 2314-2319, 2007
133 2007 IEEE International Electron Devices Meeting DH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ...
San Francisco, CA, 6-8, 2010
88 2010 High performance GeO2 /Ge nMOSFETs with source/drain junctions formed by gas phase doping K Morii, T Iwasaki, R Nakane, M Takenaka, S Takagi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
85 2009 High Ion /Ioff Ge-source ultrathin body strained-SOI tunnel FETs M Kim, Y Wakabayashi, R Nakane, M Yokoyama, M Takenaka, S Takagi
2014 IEEE international electron devices meeting, 13.2. 1-13.2. 4, 2014
83 2014 Electron Device Letters IEEE K Morii, T Iwasaki, R Nakane, M Takenaka, S Takagi
Electron Device Letters, IEEE 31, 1092-1094, 2010
81 2010 High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ...
IEEE Transactions on Electron Devices 61 (5), 1354-1360, 2014
68 2014 Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO2 interfacial layers Y Nakakita, R Nakane, T Sasada, H Matsubara, M Takenaka, S Takagi
2008 IEEE International Electron Devices Meeting, 1-4, 2008
58 2008 Reservoir computing on a silicon platform with a ferroelectric field-effect transistor K Toprasertpong, E Nako, Z Wang, R Nakane, M Takenaka, S Takagi
Communications Engineering 1 (1), 21, 2022
57 2022 Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator … J Suh, R Nakane, N Taoka, M Takenaka, S Takagi
Applied Physics Letters 99 (14), 2011
56 2011 Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources Y Takamura, R Nakane, S Sugahara
Journal of Applied Physics 107 (9), 2010
56 2010 Self-aligned metal source/drain Inx Ga1−x As n-MOSFETs using Ni-InGaAs alloy SH Kim, M Yokoyama, N Taoka, R Iida, S Lee, R Nakane, Y Urabe, ...
2010 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2010
54 2010 High-performance InAs-on-insulator n-MOSFETs with Ni-InGaAs S/D realized by contact resistance reduction technology SH Kim, M Yokoyama, R Nakane, O Ichikawa, T Osada, M Hata, ...
IEEE transactions on electron devices 60 (10), 3342-3350, 2013
53 2013 Electronic structure and magnetic properties of magnetically dead layers in epitaxial YK Wakabayashi, Y Nonaka, Y Takeda, S Sakamoto, K Ikeda, Z Chi, ...
Physical Review B 96 (10), 104410, 2017
50 2017 Sub-60-nm Extremely Thin Body S Kim, M Yokoyama, N Taoka, R Nakane, T Yasuda, O Ichikawa, ...
IEEE transactions on electron devices 60 (8), 2512-2517, 2013
48 2013 Spin waves propagating through a stripe magnetic domain structure and their applications to reservoir computing R Nakane, A Hirose, G Tanaka
Physical Review Research 3 (3), 033243, 2021
46 2021 