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ARIGHNA BASAK
ARIGHNA BASAK
Assistant Professor of Electronics & Communication Engineering Department, Brainware University
Подтвержден адрес электронной почты в домене brainwareuniversity.ac.in
Название
Процитировано
Процитировано
Год
Drain current modelling of asymmetric junctionless dual material double gate MOSFET with high K gate stack for analog and RF performance
A Basak, A Sarkar
Silicon, 1-12, 2020
222020
Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications
A Basak, M Chanda, A Sarkar
Microsystem Technologies 27, 3995-4005, 2021
142021
Impact of back gate work function for enhancement of analog/RF performance of AJDMDG Stack MOSFET
A Basak, A Sarkar
Solid State Electronics Letters 2, 117-123, 2020
92020
Quantum Analytical Model for Lateral Dual Gate UTBB SOI MOSFET for Analog/RF Performance
AS Arighna Basak
Silicon, 2020
8*2020
2D analytical modelling of asymmetric junctionless dual material double gate MOSFET for biosensing applications considering steric hindrance issue
A Basak, A Deyasi, A Sarkar
Physica Scripta 98 (5), 054003, 2023
72023
Application of nanomaterial-based biosensors for healthcare diagnostics
A Deyasi, A Basak, A Sarkar
Next generation smart nano-bio-devices, 103-122, 2022
62022
Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET
A Basak, A Deyasi, A Sarkar
New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies, 153-162, 2022
32022
Switching Performance Analysis of III-V FinFETs
A Basak, A Deyasi, K Biswas, A Sarkar
Semiconductor Devices and Technologies for Future Ultra Low Power …, 2021
22021
Gate-to-Source Leakage Current Computation in Symmetric Double Gate MOSFET incorporating Short Channel Effects
S Datta, A Basak, A Deyasi
2023 IEEE Devices for Integrated Circuit (DevIC), 522-525, 2023
12023
Analytical Drain Current Model of UTBB SOI MOSFET with lateral dual gates to Suppress Short Channel Effect
A Basak, A Sarkar
2019 Devices for Integrated Circuit (DevIC), 269-274, 2019
12019
Effect of synthesis time on the photocatalytic performance of aggregated CuBO₂ microstructures for photo induced hazardous dye removal
A Majumdar, S Chatterjee, A Basak
Journal of Sol-Gel Science and Technology 112 (2), 582-593, 2024
2024
Impact of underlap layer on DC and RF/analog performance of asymmetric junctionless dual material double gate MOSFET for low-power analog amplifier design
A Basak, A Deyasi, A Sarkar
Physica Scripta 99 (9), 095929, 2024
2024
Anwendung von Biosensoren auf Nanomaterialbasis für die Gesundheitsdiagnostik
A Deyasi, A Basak, A Sarkar
Intelligente Nano-Bio-Geräte der nächsten Generation, 111-132, 2024
2024
Impact of nanometric buried Oxide layer on subthreshold swing and drain conductance of junctionless accumulation mode MOSFET for analog circuit applications
S Datta, A Deyasi, A Basak, A Sarkar
International Journal of Nano Dimension 15 (2), 2024
2024
Effect of shallow doping on performance parameters of single heterojunction solar cell
P Debnath, S Chakrabarti, A Dhar, SK Saha, A Basak, A Deyasi
Journal of Optical Communications, 2023
2023
Analytical Modeling of Asymmetric Junctionless Dual Material Double Gate MOSFET with Underlap for Enhanced Hot Carrier Reliability
A Basak, A Deyasi, A Sarkar
2023 IEEE Devices for Integrated Circuit (DevIC), 516-521, 2023
2023
Emerging non-CMOS devices and technologies
A Basak, W Banerjee, A Singh, A Chakraborty, M Chanda
Nanoelectronics: Physics, Materials and Devices, 263-303, 2023
2023
Application of nanoscale devices in circuits
R Gupta, A Basak, R Vaid, P Debnath, M Chanda, H Rahman
Nanoelectronics: Physics, Materials and Devices, 359-384, 2023
2023
Analytical Modeling of Asymmetric Gate Stack Junctionless Dual Material Surrounding Gate MOSFET for Enhanced Hot Carrier Reliability
A Basak, A Sarkar
2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022
2022
Protection, Restoration, and Improvement
A Basak, A Sarkar
Optical Switching: Device Technology and Applications in Networks, 317-334, 2022
2022
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Статьи 1–20