| Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics C Zhao, TK Ng, RT ElAfandy, A Prabaswara, GB Consiglio, IA Ajia, ... Nano letters 16 (7), 4616-4623, 2016 | 128 | 2016 |
| An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ... Nanoscale 7 (40), 16658-16665, 2015 | 110 | 2015 |
| Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters C Zhao, TK Ng, N Wei, A Prabaswara, MS Alias, B Janjua, C Shen, ... Nano letters 16 (2), 1056-1063, 2016 | 108 | 2016 |
| GNU Radio based software-defined FMCW radar for weather surveillance application A Prabaswara, A Munir, AB Suksmono 2011 6th International Conference on Telecommunication Systems, Services …, 2011 | 79 | 2011 |
| Photoinduced entropy of InGaN/GaN pin double-heterostructure nanowires N Alfaraj, S Mitra, F Wu, IA Ajia, B Janjua, A Prabaswara, RA Aljefri, H Sun, ... Applied Physics Letters 110 (16), 2017 | 72 | 2017 |
| Review of GaN thin film and nanorod growth using magnetron sputter epitaxy A Prabaswara, J Birch, M Junaid, EA Serban, L Hultman, CL Hsiao Applied Sciences 10 (9), 3050, 2020 | 46 | 2020 |
| InGaN/GaN nanowires epitaxy on large-area MoS 2 for high-performance light-emitters C Zhao, TK Ng, CC Tseng, J Li, Y Shi, N Wei, D Zhang, GB Consiglio, ... RSC advances 7 (43), 26665-26672, 2017 | 40 | 2017 |
| Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices JW Min, D Priante, M Tangi, G Liu, CH Kang, A Prabaswara, C Zhao, ... Journal of Nanophotonics 12 (4), 043511-043511, 2018 | 37 | 2018 |
| Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer D Priante, B Janjua, A Prabaswara, RC Subedi, RT Elafandy, S Lopatin, ... Optical Materials Express 7 (12), 4214-4224, 2017 | 35 | 2017 |
| True yellow light-emitting diodes as phosphor for tunable color-rendering index laser-based white light B Janjua, TK Ng, C Zhao, A Prabaswara, GB Consiglio, D Priante, C Shen, ... Acs Photonics 3 (11), 2089-2095, 2016 | 34 | 2016 |
| Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy M Tangi, JW Min, D Priante, RC Subedi, DH Anjum, A Prabaswara, ... Nano Energy 54, 264-271, 2018 | 32 | 2018 |
| Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes M Tangi, P Mishra, B Janjua, A Prabaswara, C Zhao, D Priante, JW Min, ... Journal of Applied Physics 123 (10), 2018 | 30 | 2018 |
| Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer A Prabaswara, JW Min, C Zhao, B Janjua, D Zhang, AM Albadri, ... Nanoscale research letters 13, 1-9, 2018 | 26 | 2018 |
| Titanium carbide MXene nucleation layer for epitaxial growth of high-quality GaN nanowires on amorphous substrates A Prabaswara, H Kim, JW Min, RC Subedi, DH Anjum, B Davaasuren, ... ACS nano 14 (2), 2202-2211, 2020 | 22 | 2020 |
| Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy M Tangi, P Mishra, B Janjua, TK Ng, DH Anjum, A Prabaswara, Y Yang, ... Journal of Applied Physics 120 (4), 2016 | 18 | 2016 |
| On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy P Mishra, B Janjua, TK Ng, DH Anjum, RT Elafandy, A Prabaswara, ... Optical Materials Express 6 (6), 2052-2062, 2016 | 18 | 2016 |
| Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires D Priante, RT Elafandy, A Prabaswara, B Janjua, C Zhao, MS Alias, ... Journal of Applied Physics 124 (1), 2018 | 17 | 2018 |
| Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications B Janjua, TK Ng, C Zhao, HM Oubei, C Shen, A Prabaswara, MS Alias, ... Optics express 24 (17), 19228-19236, 2016 | 17 | 2016 |
| Ultraviolet-A LED based on quantum-disks-in-AlGaN-nanowires—optimization and device reliability B Janjua, D Priante, A Prabaswara, L Alanazi, C Zhao, AA Alhamoud, ... 2018 IEEE Photonics Conference (IPC), 1-12, 2018 | 12 | 2018 |
| Direct growth of single crystalline GaN nanowires on indium tin oxide-coated silica A Prabaswara, JW Min, RC Subedi, M Tangi, JA Holguin-Lerma, C Zhao, ... Nanoscale Research Letters 14, 1-7, 2019 | 10 | 2019 |
Tien Khee NgPrincipal Scientist, KAUST; Fellow of IET, Fellow of IOPПодтвержден адрес электронной почты в домене kaust.edu.sa
