Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
652 2019 Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung
Journal of applied physics 98 (12), 2005
558 2005 Carbon nanotube membranes with ultrahigh specific adsorption capacity for water desalination and purification HY Yang, ZJ Han, SF Yu, KL Pey, K Ostrikov, R Karnik
Nature communications 4 (1), 2220, 2013
444 2013 Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing KK Ong, KL Pey, PS Lee, ATS Wee, XC Wang, YF Chong
Applied physics letters 89 (17), 2006
283 2006 Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH) YK Chin, KL Pey, N Singh, GQ Lo, LH Tan, G Zhu, X Zhou, XC Wang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
248 2009 Effect of copper TSV annealing on via protrusion for TSV wafer fabrication A Heryanto, WN Putra, A Trigg, S Gao, WS Kwon, FX Che, XF Ang, J Wei, ...
Journal of electronic materials 41, 2533-2542, 2012
195 2012 A study of thermo-mechanical stress and its impact on through-silicon vias N Ranganathan, K Prasad, N Balasubramanian, KL Pey
Journal of micromechanics and microengineering 18 (7), 075018, 2008
195 2008 Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
194 2021 New salicidation technology with Ni (Pt) alloy for MOSFETs PS Lee, KL Pey, D Mangelinck, J Ding, DZ Chi, L Chan
IEEE Electron Device Letters 22 (12), 568-570, 2001
130 2001 Influence of Bosch etch process on electrical isolation of TSV structures N Ranganathan, DY Lee, L Youhe, GQ Lo, K Prasad, KL Pey
IEEE Transactions on components, packaging and manufacturing technology 1 …, 2011
117 2011 Two-dimensional analytical Mott-Gurney law for a trap-filled solid W Chandra, LK Ang, KL Pey, CM Ng
Applied physics letters 90 (15), 2007
117 2007 Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance H Wong, KL Pey, L Chan
US Patent 5,731,239, 1998
117 1998 The nature of dielectric breakdown X Li, CH Tung, KL Pey
Applied Physics Letters 93 (7), 2008
111 2008 Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ...
Applied Physics Letters 83 (11), 2223-2225, 2003
111 2003 Annealing of ultrashallow YF Chong, KL Pey, ATS Wee, A See, L Chan, YF Lu, WD Song, LH Chua
Applied Physics Letters 76 (22), 3197-3199, 2000
100 2000 Vertically arrayed Si nanowire/nanorod-based core-shell pn junction solar cells X Wang, KL Pey, CH Yip, EA Fitzgerald, DA Antoniadis
Journal of Applied Physics 108 (12), 2010
99 2010 Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices KL Pey, SY Siah, YM Lee
US Patent 6,025,267, 2000
98 2000 Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization CL Gan, CV Thompson, KL Pey, WK Choi, HL Tay, B Yu, ...
Applied physics letters 79 (27), 4592-4594, 2001
92 2001 Micro‐Raman Spectroscopy Investigation of Nickel Silicides and Nickel (Platinum) Silicides PS Lee, D Mangelinck, KL Pey, ZX Shen, J Ding, T Osipowicz, A See
Electrochemical and Solid-State Letters 3 (3), 153, 2000
92 2000 Intrinsic nanofilamentation in resistive switching X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ...
Journal of Applied Physics 113 (11), 2013
87 2013