Fabrizio Bonani

Процитировано

	Все	Начиная с 2020 г.
Статистика цитирования	2401	742
h-индекс	25	16
i10-индекс	54	27

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Giovanni GhioneProfessore ordinario di elettronica, Politecnico di TorinoПодтвержден адрес электронной почты в домене polito.it
Fabio Lorenzo, TraversaUniversity of California San DiegoПодтвержден адрес электронной почты в домене physics.ucsd.edu
Federica CappellutiAssociate Professor of Electronic Engineering, Politecnico di TorinoПодтвержден адрес электронной почты в домене polito.it
Francesco BertazziAssistant Professor, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniПодтвержден адрес электронной почты в домене polito.it
Mauro FurnoNovaled GmbHПодтвержден адрес электронной почты в домене novaled.com
M. Di VentraProfessor of Physics, University of California, San DiegoПодтвержден адрес электронной почты в домене physics.ucsd.edu
Vittorio CamarchiaAssociate Professor of Electronics, Politecnico di TorinoПодтвержден адрес электронной почты в домене polito.it
Yuriy V. PershinAssociate Professor of Physics, University of South CarolinaПодтвержден адрес электронной почты в домене physics.sc.edu
Fernando CorintoPolitecnico di TorinoПодтвержден адрес электронной почты в домене polito.it
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityПодтвержден адрес электронной почты в домене purdue.edu
Michele GoanoProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniПодтвержден адрес электронной почты в домене polito.it
Javier Mateos (ORCID:0000-0003-404...Universidad de Salamanca, Catedrático de ElectrónicaПодтвержден адрес электронной почты в домене usal.es
Tomás GonzálezProfessor of Electronics - University of Salamanca (Spain)Подтвержден адрес электронной почты в домене usal.es
Susana PérezProfessor of Electronics, Applied Physics Department, University of SalamancaПодтвержден адрес электронной почты в домене usal.es
Aldo Di CarloProf. of Opto&Nano-electronics, University of Rome Tor Vergata. Consiglio Nazionale delle RicercheПодтвержден адрес электронной почты в домене uniroma2.it

Fabrizio Bonani

Professor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e

Подтвержден адрес электронной почты в домене polito.it - Главная страница

Semiconductor device modeling Nonlinear circuits Stability Analysis


Название По числу цитат По году По названию	Процитировано Процитировано	Год
Noise in semiconductor devices F Bonani, G Ghione Noise in Semiconductor Devices, 1-213, 2001	214	2001
An efficient approach to noise analysis through multidimensional physics-based models F Bonani, G Ghione, MR Pinto, RK Smith IEEE Transactions on Electron Devices 45 (1), 261-269, 1998	174	1998
Analysis of stability and bifurcations of limit cycles in Chua's circuit through the harmonic-balance approach F Bonani, M Gilli IEEE Transactions on Circuits and Systems I: Fundamental Theory and …, 1999	125	1999
On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal … F Bonani, G Ghione Solid-State Electronics 38 (7), 1409-1412, 1995	114	1995
Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states FL Traversa, C Ramella, F Bonani, M Di Ventra Science advances 1 (6), e1500031, 2015	106	2015
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation F Bonani, SD Guerrieri, G Ghione, M Pirola IEEE Transactions on Electron Devices 48 (5), 966-977, 2001	85	2001
Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations F Bonani, G Ghione Solid-State Electronics 43 (2), 285-295, 1999	85	1999
A frequency‐domain approach to the analysis of stability and bifurcations in nonlinear systems described by differential‐algebraic equations FL Traversa, F Bonani, SD Guerrieri International Journal of Circuit Theory and Applications 36 (4), 421-439, 2008	63	2008
Dynamic computing random access memory FL Traversa, F Bonani, YV Pershin, M Di Ventra Nanotechnology 25 (28), 285201, 2014	56	2014
Physics-based simulation techniques for small-and large-signal device noise analysis in RF applications F Bonani, SD Guerrieri, G Ghione IEEE Transactions on Electron Devices 50 (3), 633-644, 2003	51	2003
Noise source modeling for cyclostationary noise analysis in large-signal device operation F Bonani, SD Guerrieri, G Ghione IEEE Transactions on Electron Devices 49 (9), 1640-1647, 2002	51	2002
Oscillator noise: A nonlinear perturbative theory including orbital fluctuations and phase-orbital correlation FL Traversa, F Bonani IEEE Transactions on Circuits and Systems I: Regular Papers 58 (10), 2485-2497, 2011	49	2011
Improved harmonic balance implementation of Floquet analysis for nonlinear circuit simulation FL Traversa, F Bonani AEU-International journal of electronics and communications 66 (5), 357-363, 2012	43	2012
A unified approach to the sensitivity and variability physics-based modeling of semiconductor devices operated in dynamic conditions—Part I: Large-signal sensitivity SD Guerrieri, F Bonani, F Bertazzi, G Ghione IEEE Transactions on Electron Devices 63 (3), 1195-1201, 2016	37	2016
Generalized Floquet Theory: Application to Dynamical Systems with Memory<? format?> and Bloch’s Theorem for Nonlocal Potentials FL Traversa, M Di Ventra, F Bonani Physical Review Letters 110 (17), 170602, 2013	37	2013
Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide M Furno, F Bonani, G Ghione Solid-state electronics 51 (3), 466-474, 2007	34	2007
Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes F Cappelluti, F Bonani, M Furno, G Ghione, R Carta, L Bellemo, ... Microelectronics journal 37 (3), 190-196, 2006	31	2006
Self-consistent coupled carrier transport full-wave EM analysis of semiconductor traveling-wave devices F Bertazzi, F Cappelluti, SD Guerrieri, F Bonani, G Ghione IEEE transactions on microwave theory and techniques 54 (4), 1611-1618, 2006	30	2006
Physics-based RF noise modeling of submicron MOSFETs S Donati, MA Alam, KS Krisch, S Martin, MR Pinto, HH Vuong, F Bonani, ... International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998	28	1998
On the substrate thermal optimization in SiC-based backside-mounted high-power GaN FETs F Cappelluti, M Furno, A Angelini, F Bonani, M Pirola, G Ghione IEEE transactions on electron devices 54 (7), 1744-1752, 2007	27	2007

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