42.3: Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM‐OLED display SHK Park, M Ryu, CS Hwang, S Yang, C Byun, JI Lee, J Shin, SM Yoon, ...
SID Symposium Digest of Technical Papers 39 (1), 629-632, 2008
668 2008 21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane DH Cho, S Yang, SHK Park, C Byun, SM Yoon, JI Lee, CS Hwang, ...
SID Symposium Digest of Technical Papers 40 (1), 280-283, 2009
638 2009 Challenge to Future Displays: Transparent AM-OLED Driven by Peald Grown ZnO TFT SH Ko Park, CS Hwang, CW Byun, MK Ryu, JI Lee, HY Chu, KI Cho, ...
한국정보디스플레이학회: 학술대회논문집, 1249-1252, 2007
587 2007 Transparent and photo‐stable ZnO thin‐film transistors to drive an active matrix organic‐light‐emitting‐diode display panel SHK Park, CS Hwang, M Ryu, S Yang, C Byun, J Shin, JI Lee, K Lee, ...
Advanced Materials 21 (6), 678-682, 2009
429 2009 Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor H Oh, SM Yoon, MK Ryu, CS Hwang, S Yang, SHK Park
Applied physics letters 97 (18), 2010
381 2010 Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing E Fortunato, R Barros, P Barquinha, V Figueiredo, SHK Park, CS Hwang, ...
Applied Physics Letters 97 (5), 2010
345 2010 METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER SH Park, CS Hwang, HY Chu, JI Lee
US Patent App. 11/970,737, 2008
331 2008 Thin-film transistors based on p-type Cu2O thin films produced at room temperature E Fortunato, V Figueiredo, P Barquinha, E Elamurugu, R Barros, ...
Applied Physics Letters 96 (19), 2010
242 2010 Light effects on the bias stability of transparent ZnO thin film transistors JH Shin, JS Lee, CS Hwang, SHK Park, WS Cheong, M Ryu, CW Byun, ...
Etri Journal 31 (1), 62-64, 2009
230 2009 Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With KH Ji, JI Kim, YG Mo, JH Jeong, S Yang, CS Hwang, SHK Park, MK Ryu, ...
IEEE electron device letters 31 (12), 1404-1406, 2010
216 2010 Ultrathin film encapsulation of an OLED by ALD SHK Park, J Oh, CS Hwang, JI Lee, YS Yang, HY Chu
Electrochemical and solid-state letters 8 (2), H21, 2005
215 2005 Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer S Yang, DH Cho, MK Ryu, SHK Park, CS Hwang, J Jang, JK Jeong
Applied physics letters 96 (21), 2010
186 2010 Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature DH Cho, S Yang, C Byun, J Shin, MK Ryu, SHK Park, CS Hwang, ...
Applied Physics Letters 93 (14), 2008
173 2008 Comparison of adaptive techniques to predict crop yield response under varying soil and land management conditions SJ Park, CS Hwang, PLG Vlek
Agricultural Systems 85 (1), 59-81, 2005
155 2005 Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution B Lee, JY Oh, H Cho, CW Joo, H Yoon, S Jeong, E Oh, J Byun, H Kim, ...
Nature Communications 11 (1), 663, 2020
145 2020 High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach MK Ryu, S Yang, SHK Park, CS Hwang, JK Jeong
Applied Physics Letters 95 (7), 2009
130 2009 Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors MK Ryu, S Yang, SHK Park, CS Hwang, JK Jeong
Applied Physics Letters 95 (17), 2009
127 2009 Transparent ZnO-TFT arrays fabricated by atomic layer deposition SHK Park, CS Hwang, HY Jeong, HY Chu, KI Cho
Electrochemical and Solid-State Letters 11 (1), H10, 2007
125 2007 Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics JM Lee, IT Cho, JH Lee, WS Cheong, CS Hwang, HI Kwon
Applied Physics Letters 94 (22), 2009
118 2009 Fully transparent non‐volatile memory thin‐film transistors using an organic ferroelectric and oxide semiconductor below 200 C SM Yoon, S Yang, C Byun, SHK Park, DH Cho, SW Jung, OS Kwon, ...
Advanced Functional Materials 20 (6), 921-926, 2010
114 2010 