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Prof. Dr. Ghulam Dastgeer
Prof. Dr. Ghulam Dastgeer
Peking university Beijing (Scientist), Sejong University, Seoul, South Korea
Overená e-mailová adresa na: sejong.ac.kr
Názov
Citované v
Citované v
Rok
Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein
Ghulam Dastgeer,* Zafar Muhammad Shahzad,* Heeyeop Chae, Yong Ho Kim, Byung ...
Advanced Functional Materials, 2022
942022
Highly Sensitive, Ultrafast, and Broadband Photo‐Detecting Field‐Effect Transistor with Transition‐Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe …
AM Afzal, MZ Iqbal, G Dastgeer, A Ahmad, B Park
Advanced Science 8 (11), 2003713, 2021
912021
High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse
AM Afzal, G Dastgeer, MZ Iqbal, P Gautam, MM Faisal
ACS applied materials & interfaces 12 (17), 19625-19634, 2020
872020
Sol-gel assisted Ag doped NiAl2O4 nanomaterials and their nanocomposites with g-C3N4 nanosheets for the removal of organic effluents
A Irshad, MF Warsi, PO Agboola, G Dastgeer, M Shahid
Journal of Alloys and Compounds 902, 163805, 2022
762022
Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode
G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ...
ACS applied materials & interfaces 10 (15), 13150-13157, 2018
722018
A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic
E Elahi, G Dastgeer, G Nazir, S Nisar, M Bashir, HA Qureshi, D Kim, J Aziz, ...
Computational Materials Science 213, 111670, 2022
702022
p‐GeSe/n‐ReS2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications
G Dastgeer, AM Afzal, G Nazir, N Sarwar
Advanced Materials Interfaces 8 (22), 2100705, 2021
632021
WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times
AM Afzal, MZ Iqbal, G Dastgeer, G Nazir, S Mumtaz, M Usman, J Eom
ACS applied materials & interfaces 12 (35), 39524-39532, 2020
612020
Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations
G Dastgeer, S Nisar, A Rasheed, K Akbar, VD Chavan, D Kim, ...
Nano Energy 119, 109106, 2024
552024
Gate modulation of the spin current in graphene/WSe2 van der Waals heterostructure at room temperature
G Dastgeer, AM Afzal, SHA Jaffery, M Imran, MA Assiri, S Nisar
Journal of Alloys and Compounds 919, 165815, 2022
542022
Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching
G Dastgeer, AM Afzal, J Aziz, S Hussain, SHA Jaffery, D Kim, M Imran, ...
Materials 14 (24), 7535, 2021
522021
Heteroatoms-doped hierarchical porous carbons: Multifunctional materials for effective methylene blue removal and cryogenic hydrogen storage
G Nazir, A Rehman, S Hussain, AM Afzal, G Dastgeer, MA Rehman, ...
Colloids and Surfaces A: Physicochemical and Engineering Aspects 630, 127554, 2021
522021
Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates
G Nazir, MA Rehman, MF Khan, G Dastgeer, S Aftab, AM Afzal, Y Seo, ...
ACS applied materials & interfaces 10 (38), 32501-32509, 2018
512018
Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering
G Dastgeer, S Nisar, ZM Shahzad, A Rasheed, D Kim, SHA Jaffery, ...
Advanced Science 10 (1), 2204779, 2023
462023
Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor
G Dastgeer, H Abbas, DY Kim, J Eom, C Choi
physica status solidi (RRL)–Rapid Research Letters 15 (1), 2000473, 2021
452021
Exploring the charge storage mechanism in high performance Co@MnO2 based hybrid supercapacitors using Randles–Ševčík and Dunn’s models
GD Amir M Afzal
Journal of Applied Electrochemistry, 2023
44*2023
Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode
AM Afzal, Y Javed, NA Shad, MZ Iqbal, G Dastgeer, MM Sajid, S Mumtaz
Nanoscale 12 (5), 3455-3468, 2020
442020
Polarization-Sensitive Photodetection of Anisotropic 2D Black Arsenic
GD Muhammad Usman, Sobia Nisar, Deok-kee kim
Journal of Physical Chemistry C, 2023
422023
Black phosphorus-IGZO van der Waals diode with low-resistivity metal contacts
G Dastgeer, MF Khan, J Cha, AM Afzal, KH Min, BM Ko, H Liu, S Hong, ...
ACS Applied Materials & Interfaces 11 (11), 10959-10966, 2019
392019
A review on two-dimensional (2D) perovskite material-based solar cells to enhance the power conversion efficiency
E Elahi, G Dastgeer, AS Siddiqui, SA Patil, MW Iqbal, PR Sharma
Dalton Transactions 51 (3), 797-816, 2022
382022
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20