Influence of stray fields on the switching-field distribution for bit-patterned media based on pre-patterned substrates B Pfau, CM Günther, E Guehrs, T Hauet, T Hennen, S Eisebitt, O Hellwig
Applied physics letters 105 (13), 2014
38 2014 Study of the SET switching event of VCM-based memories on a picosecond timescale M von Witzleben, T Hennen, A Kindsmüller, S Menzel, R Waser, U Böttger
Journal of applied physics 127 (20), 2020
34 2020 On the universality of the I–V switching characteristics in non-volatile and volatile resistive switching oxides DJ Wouters, S Menzel, JAJ Rupp, T Hennen, R Waser
Faraday Discussions 213, 183-196, 2019
32 2019 Comprehensive model for the electronic transport in C Funck, C Bäumer, S Wiefels, T Hennen, R Waser, S Hoffmann-Eifert, ...
Physical Review B 102 (3), 035307, 2020
28 2020 Forming-free Mott-oxide threshold selector nanodevice showing s-type NDR with high endurance (> 1012 cycles), excellent Vth stability (5%), fast (< 10 ns … T Hennen, D Bedau, JAJ Rupp, C Funck, S Menzel, M Grobis, R Waser, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.5. 1-37.5. 4, 2018
23 2018 Bit patterned media optimization at 1 Tdot/in2 by post-annealing O Hellwig, EE Marinero, D Kercher, T Hennen, A McCallum, E Dobisz, ...
Journal of Applied Physics 116 (12), 2014
22 2014 Current-limiting amplifier for high speed measurement of resistive switching data T Hennen, E Wichmann, A Elias, J Lille, O Mosendz, R Waser, ...
Review of Scientific Instruments 92 (5), 2021
19 2021 Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-Doped V2 O3 Threshold Switching Device for Memory Selector and Neuromorphic … T Hennen, D Bedau, JAJ Rupp, C Funck, S Menzel, M Grobis, R Waser, ...
2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019
9 2019 A high throughput generative vector autoregression model for stochastic synapses T Hennen, A Elias, JF Nodin, G Molas, R Waser, DJ Wouters, D Bedau
Frontiers in Neuroscience 16, 941753, 2022
8 2022 Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance T Hennen, E Wichmann, R Waser, DJ Wouters, D Bedau
Review of Scientific Instruments 93 (2), 2022
7 2022 Counting molecules: Python based scheme for automated enumeration and categorization of molecules in scanning tunneling microscopy images J Hellerstedt, A Cahlík, M Švec, O Stetsovych, T Hennen
Software Impacts 12, 100301, 2022
6 2022 A Mott insulator-based oscillator circuit for reservoir computing W Ma, T Hennen, M Lueker-Boden, R Galbraith, J Goode, WH Choi, ...
2020 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2020
6 2020 Fabrication of highly resistive NiO thin films for nanoelectronic applications J Mohr, T Hennen, D Bedau, J Nag, R Waser, DJ Wouters
Advanced Physics Research 1 (1), 2200008, 2022
5 2022 Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices P Stasner, N Kopperberg, K Schnieders, T Hennen, S Wiefels, S Menzel, ...
Nanoscale Horizons 9 (5), 764-774, 2024
4 2024 IEEE International Electron Devices Meeting (IEDM) T Hennen, D Bedau, JAJ Rupp, C Funck, S Menzel, M Grobis, R Waser, ...
San Francisco, USA December, 2018
4 2018 Magnetic Cluster Size “Knee” Analysis for Small Grain Continuous Media Y Ikeda, SH Florez, FQ Zhu, K Takano, H Do, T Hennen, BD Terris
IEEE transactions on magnetics 48 (11), 3185-3187, 2012
4 2012 Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics D Babich, J Tranchant, C Adda, B Corraze, MP Besland, P Warnicke, ...
arXiv preprint arXiv:2105.05093, 2021
3 2021 Demonstration of the thermal stability advantage of advanced exchange coupled composite media SH Florez, Y Ikeda, T Hennen, FQ Zhu, K Takano, BD Terris
Journal of Applied Physics 115 (17), 2014
3 2014 Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V2 O3 J Mohr, C Bengel, T Hennen, D Bedau, S Menzel, R Waser, DJ Wouters
physica status solidi (a) 221 (22), 2300405, 2024
1 2024 Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V2 O3 Films and the Influence of its Variability on Scaled Devices J Mohr, T Hennen, D Bedau, R Waser, DJ Wouters
Advanced Physics Research 3 (10), 2400040, 2024
1 2024 