| Light modulation and water splitting enhancement using a composite porous GaN structure C Yang, X Xi, Z Yu, H Cao, J Li, S Lin, Z Ma, L Zhao ACS Applied Materials & Interfaces 10 (6), 5492-5497, 2018 | 66 | 2018 |
| Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs S Zhu, S Lin, J Li, Z Yu, H Cao, C Yang, J Li, L Zhao Applied Physics Letters 111 (17), 2017 | 64 | 2017 |
| GaN with laterally aligned nanopores to enhance the water splitting C Yang, L Liu, S Zhu, Z Yu, X Xi, S Wu, H Cao, J Li, L Zhao The Journal of Physical Chemistry C 121 (13), 7331-7336, 2017 | 54 | 2017 |
| Degradation and failure mechanism of AlGaN-based UVC-LEDs Z Ma, H Cao, S Lin, X Li, L Zhao Solid-State Electronics 156, 92-96, 2019 | 53 | 2019 |
| Color converted white light-emitting diodes with 637.6 MHz modulation bandwidth H Cao, S Lin, Z Ma, X Li, J Li, L Zhao IEEE Electron Device Letters 40 (2), 267-270, 2018 | 47 | 2018 |
| Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN C Zhang, L Turyanska, H Cao, L Zhao, MW Fay, R Temperton, J O'Shea, ... Nanoscale 11 (28), 13450-13457, 2019 | 40 | 2019 |
| High responsivity and wavelength selectivity of GaN‐based resonant cavity photodiodes J Li, C Yang, L Liu, H Cao, S Lin, X Xi, X Li, Z Ma, K Wang, A Patanè, ... Advanced Optical Materials 8 (7), 1901276, 2020 | 35 | 2020 |
| Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates X Tang, Y Lu, R Lin, CH Liao, Y Zhao, KH Li, N Xiao, H Cao, W Babatain, ... Applied Physics Letters 122 (12), 2023 | 30 | 2023 |
| Enhancing the spontaneous emission rate by modulating carrier distribution in GaN-based surface plasmon light-emitting diodes S Zhu, Z Yu, L Liu, C Yang, H Cao, X Xi, J Li, L Zhao Optics Express 25 (9), 9617-9627, 2017 | 30 | 2017 |
| Degradation and corresponding failure mechanism for GaN-based LEDs J Fu, L Zhao, H Cao, X Sun, B Sun, J Wang, J Li AIP Advances 6 (5), 2016 | 24 | 2016 |
| GaN nanocolumns fabricated by self-assembly Ni mask and its enhanced photocatalytic performance in water splitting X Xi, C Yang, H Cao, Z Yu, J Li, S Lin, Z Ma, L Zhao Applied Surface Science 462, 310-315, 2018 | 22 | 2018 |
| GaN-based flip-chip parallel micro LED array for visible light communication SC Zhu, LX Zhao, C Yang, HC Cao, ZG Yu, L Liu International Conference on Optoelectronics and Microelectronics Technology …, 2017 | 22 | 2017 |
| A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C 10 (46), 17602-17610, 2022 | 20 | 2022 |
| Optical and frequency degradation behavior of GaN-based micro-LEDs for visible light communication Z Ma, H Cao, S Lin, X Li, X Xi, J Li, L Zhao Optics Express 28 (9), 12795-12804, 2020 | 20 | 2020 |
| Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy Z Liu, M Nong, Y Lu, H Cao, S Yuvaraja, N Xiao, Z Alnakhli, ... Optics Letters 47 (23), 6229-6232, 2022 | 15 | 2022 |
| Failure Mechanism of Phosphors in GaN‐Based White LEDs Z Ma, H Cao, X Sun, C Yang, X Xi, J Li, S Lin, L Zhao physica status solidi (a) 216 (6), 1800335, 2019 | 12 | 2019 |
| Space‐Confined Synthesis of Monolayer Graphdiyne in MXene Interlayer J Li, H Cao (Co-first), Q Wang, H Zhang, Q Liu, C Chen, Z Shi, G Li, ... Advanced Materials 36 (7), 2308429, 2024 | 11 | 2024 |
| Composite degradation model and corresponding failure mechanism for mid-power GaN-based white LEDs H Cao, Z Ma, B Sun, X Sun, C Yang, X Li, J Wang, L Zhao AIP Advances 8 (6), 2018 | 10 | 2018 |
| Etching-free pixel definition in InGaN green micro-LEDs Z Liu, Y Lu, H Cao, GI Maciel Garcia, T Liu, X Tang, N Xiao, ... Nature - Light: Science & Applications 13 (1), 117, 2024 | 9 | 2024 |
| Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template S Lin, H Cao, J Li, X Sun, H Xiu, L Zhao Applied Physics Express 11 (12), 122101, 2018 | 7 | 2018 |
Xiaohang LiAssociate Professor, Advanced Semiconductor Lab, ECE, CEMSEOverená e-mailová adresa na: kaust.edu.sa