Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 193-200, 2009
529 2009 Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 186-192, 2009
442 2009 Physical models of size-dependent nanofilament formation and rupture in NiO resistiveswitching memories D Ielmini, F Nardi, C Cagli
Nanotechnology 22 (25), 254022, 2011
273 2011 Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ...
2007 IEEE International Electron Devices Meeting, 775-778, 2007
237 2007 Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories D Ielmini, F Nardi, C Cagli
Applied Physics Letters 96 (5), 2010
226 2010 Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction C Cagli, D Ielmini, F Nardi, AL Lacaita
2008 IEEE International Electron Devices Meeting, 1-4, 2008
212 2008 Quantum-size effects in hafnium-oxide resistive switching S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...
Applied Physics Letters 102 (18), 2013
186 2013 Universal reset characteristics of unipolar and bipolar metal-oxide RRAM D Ielmini, F Nardi, C Cagli
IEEE Transactions on Electron Devices 58 (10), 3246-3253, 2011
171 2011 Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2 -Based RRAM S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...
Scientific reports 3 (1), 2929, 2013
166 2013 Modeling of set/reset operations in NiO-based resistive-switching memory devices C Cagli, F Nardi, D Ielmini
IEEE Transactions on electron devices 56 (8), 1712-1720, 2009
149 2009 Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
145 2011 Resistance transition in metal oxides induced by electronic threshold switching D Ielmini, C Cagli, F Nardi
Applied Physics Letters 94 (6), 2009
143 2009 Size-dependent retention time in NiO-based resistive-switching memories D Ielmini, F Nardi, C Cagli, AL Lacaita
IEEE Electron Device Letters 31 (4), 353-355, 2010
141 2010 Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016
139 2016 A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé
IEEE electron device letters 34 (8), 999-1001, 2013
139 2013 Cycle-to-Cycle Intrinsic RESET Statistics in S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune
IEEE electron device letters 34 (5), 623-625, 2013
132 2013 Analysis and modeling of resistive switching statistics S Long, C Cagli, D Ielmini, M Liu, J Sune
Journal of Applied Physics 111 (7), 2012
124 2012 Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
111 2011 Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures P Calka, E Martinez, V Delaye, D Lafond, G Audoit, D Mariolle, ...
Nanotechnology 24 (8), 085706, 2013
96 2013 Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices D Ielmini, S Spiga, F Nardi, C Cagli, A Lamperti, E Cianci, M Fanciulli
Journal of Applied Physics 109 (3), 2011
92 2011 