One-sided schmitt-trigger-based 9T SRAM cell for near-threshold operation K Cho, J Park, TW Oh, SO Jung
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (5), 1551-1561, 2020
103 2020 Power-gated 9T SRAM cell for low-energy operation TW Oh, H Jeong, K Kang, J Park, Y Yang, SO Jung
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (3 …, 2016
103 2016 Sense-amplifier-based flip-flop with transition completion detection for low-voltage operation H Jeong, TW Oh, SC Song, SO Jung
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (4), 609-620, 2018
45 2018 Differential read/write 7T SRAM with bit-interleaved structure for near-threshold operation JS Oh, J Park, K Cho, TW Oh, SO Jung
IEEE Access 9, 64105-64115, 2021
21 2021 High-performance and area-efficient ferroelectric FET-based nonvolatile flip-flops SK Kim, TW Oh, S Lim, DH Ko, SO Jung
IEEE Access 9, 35549-35561, 2021
21 2021 Bitline precharging and preamplifying switching pMOS for high-speed low-power SRAM H Jeong, J Park, TW Oh, W Rim, T Song, G Kim, HS Won, SO Jung
IEEE Transactions on Circuits and Systems II: Express Briefs 63 (11), 1059-1063, 2016
17 2016 Bitline Charge-Recycling SRAM Write Assist Circuitry for H Jeong, SH Oh, TW Oh, H Kim, CN Park, W Rim, T Song, SO Jung
IEEE Journal of Solid-State Circuits 54 (3), 896-906, 2018
15 2018 Pre-charged local bit-line sharing SRAM architecture for near-threshold operation TW Oh, H Jeong, J Park, SO Jung
IEEE Transactions on Circuits and Systems I: Regular Papers 64 (10), 2737-2747, 2017
13 2017 SRAM write assist circuit using cell supply voltage self-collapse with bitline charge sharing for near-threshold operation K Cho, J Park, K Kim, TW Oh, SO Jung
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 1567-1571, 2021
11 2021 SRAM write-and performance-assist cells for reducing interconnect resistance effects increased with technology scaling K Cho, H Choi, IJ Jung, J Oh, TW Oh, K Kim, G Kim, T Choi, C Sim, T Song, ...
IEEE Journal of Solid-State Circuits 57 (4), 1039-1048, 2022
10 2022 Sensing voltage compensation circuit for low-power dram bit-line sense amplifier SM Kim, TW Oh, SO Jung
2018 International Conference on Electronics, Information, and Communication …, 2018
9 2018 Comparative analysis and energy-efficient write scheme of ferroelectric FET-based memory cells DH Ko, TW Oh, S Lim, SK Kim, SO Jung
IEEE Access 9, 127895-127905, 2021
8 2021 Analysis on sensing yield of voltage latched sense amplifier for low power DRAM SM Kim, B Song, TW Oh, SO Jung
2018 14th Conference on Ph. D. Research in Microelectronics and Electronics …, 2018
8 2018 pMOS Pass Gate Local Bitline SRAM Architecture With Virtual J Park, TW Oh, SO Jung
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 28 (4 …, 2020
7 2020 Comparative analysis of MCU memory for IoT application S Joo, YJ An, TW Oh, SO Jung
2018 International Conference on Electronics, Information, and Communication …, 2018
7 2018 Highly accurate, fully digital temperature sensor with curvature correction S Joo, TW Oh, JY Kim, S Lee, BM Moon, K Sohn, SO Jung
IEEE sensors journal 21 (19), 21248-21258, 2021
6 2021 Static random access memory cell capable of performing differential operation SO Jung, JH Park, HW Jeong, TW Oh
US Patent 10,319,434, 2019
4 2019 Bitline charge sharing suppressed bitline and cell supply collapse assists for energy-efficient 6t sram K Kim, TW Oh, SO Jung
IEEE Access 9, 57393-57403, 2021
3 2021 SRAM cell with data-aware power-gating write-asist for near-threshold operation TW Oh, SO Jung
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2018
3 2018 Ferroelectric random access memory device and method for operating read and write thereof SO Jung, DH Ko, TW Oh, SH Lim, SK Kim
US Patent 11,790,971, 2023
2 2023