| A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 JA Spencer, AL Mock, AG Jacobs, M Schubert, Y Zhang, MJ Tadjer Applied Physics Reviews 9 (1), 2022 | 248 | 2022 |
| Nanowire-quantum-dot solar cells and the influence of nanowire length on the charge collection efficiency KS Leschkies, AG Jacobs, DJ Norris, ES Aydil Applied Physics Letters 95 (19), 2009 | 111 | 2009 |
| 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ... IEEE Electron Device Letters 44 (8), 1268-1271, 2023 | 50 | 2023 |
| Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ... Journal of Physics D: Applied Physics 54 (3), 034005, 2020 | 45 | 2020 |
| Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing J Jiang, AG Jacobs, B Wenning, C Liedel, MO Thompson, CK Ober ACS applied materials & interfaces 9 (37), 31317-31324, 2017 | 41 | 2017 |
| Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing RT Bell, AG Jacobs, VC Sorg, B Jung, MO Hill, BE Treml, MO Thompson ACS Combinatorial Science 18 (9), 548-558, 2016 | 35 | 2016 |
| Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3 T Yoo, X Xia, F Ren, A Jacobs, MJ Tadjer, S Pearton, H Kim Applied Physics Letters 121 (7), 2022 | 32 | 2022 |
| Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing AG Jacobs, C Liedel, H Peng, L Wang, DM Smilgies, CK Ober, ... Macromolecules 49 (17), 6462-6470, 2016 | 26 | 2016 |
| Control of PS-b-PMMA directed self-assembly registration by laser induced millisecond thermal annealing AG Jacobs, B Jung, CK Ober, MO Thompson Proc. SPIE 9049, 90492B, 2014 | 25 | 2014 |
| A Simple Edge Termination Design for Vertical GaN PN Diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 20 | 2022 |
| Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 20 | 2021 |
| Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques JC Gallagher, MA Ebrish, MA Porter, AG Jacobs, BP Gunning, RJ Kaplar, ... Scientific Reports 12 (1), 658, 2022 | 18 | 2022 |
| Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices Y Ma, Y Qin, M Porter, J Spencer, Z Du, M Xiao, B Wang, Y Wang, ... Advanced Electronic Materials, 2300662, 2023 | 15 | 2023 |
| Control of polystyrene-block-poly (methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing AG Jacobs, B Jung, J Jiang, CK Ober, MO Thompson Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (3), 031205-031205, 2015 | 14 | 2015 |
| Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3: N with high mobility JA Spencer, MJ Tadjer, AG Jacobs, MA Mastro, JL Lyons, JA Freitas, ... Applied Physics Letters 121 (19), 2022 | 13 | 2022 |
| Development of High-Voltage Vertical GaN PN Diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020 | 13 | 2020 |
| Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation AG Jacobs, BN Feigelson, JK Hite, CA Gorsak, LE Luna, TJ Anderson, ... physica status solidi (a) 217 (7), 1900789, 2020 | 13 | 2020 |
| Laser Spike Annealing of DSA Photoresists J Jiang, A Jacobs, MO Thompson, CK Ober Journal of Photopolymer Science and Technology 28 (5), 631-634, 2015 | 13 | 2015 |
| Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1− xN determined by infrared spectroscopic ellipsometry AL Mock, AG Jacobs, EN Jin, MT Hardy, MJ Tadjer Applied Physics Letters 117 (23), 2020 | 12 | 2020 |
| Polarity dependent implanted p-type dopant activation in GaN AG Jacobs, BN Feigelson, JK Hite, CA Gorsak, LE Luna, TJ Anderson, ... Japanese Journal of Applied Physics 58 (SC), SCCD07, 2019 | 12 | 2019 |
Marko J. TadjerNaval Research LaboratoryOverená e-mailová adresa na: nrl.navy.mil
