| Spatial correlation between efficiency and crystal structure in GaN-based light-emitting diodes prepared on high-aspect ratio patterned sapphire substrate with sputtered AlN … LC Chang, YA Chen, CH Kuo IEEE Transactions on Electron Devices 61 (7), 2443-2447, 2014 | 25 | 2014 |
| Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer PH Chen, YA Chen, LC Chang, WC Lai, CH Kuo Solid-State Electronics 109, 29-32, 2015 | 9 | 2015 |
| Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells CH Kuo, YK Fu, LC Chang, YA Chen IEEE Journal of Quantum Electronics 50 (4), 255-260, 2014 | 8 | 2014 |
| Efficiency improvement of near-ultraviolet nitride-based light-emitting-diode prepared on GaN nano-rod arrays by metalorganic chemical vapor deposition CH Kuo, YA Chen, JP Wu, LC Chang IEEE Journal of Quantum Electronics 50 (3), 129-132, 2014 | 6 | 2014 |
| Void Shapes Controlled by Using Interruption‐Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2 AlN/Sapphire Template YA Chen, CH Kuo, LC Chang, JP Wu International Journal of Photoenergy 2014 (1), 621789, 2014 | 6 | 2014 |
| Interruption-free growth of 10 μm-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy YA Chen, CH Kuo, JP Wu, CW Chang Journal of Crystal Growth 426, 180-185, 2015 | 5 | 2015 |
| Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO2 AlN/Sapphire Template YA Chen, CH Kuo, LC Chang, JP Wu IEEE Journal of Quantum Electronics 50 (10), 1-6, 2014 | 4 | 2014 |
| GaN-based light-emitting-diode with a p-InGaN layer PH Chen, CH Kuo, WC Lai, YA Chen, LC Chang, SJ Chang Journal of Display Technology 10 (3), 204-207, 2013 | 2 | 2013 |