A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOS voltage reference L Magnelli, F Crupi, P Corsonello, C Pace, G Iannaccone
IEEE Journal of Solid-State Circuits 46 (2), 465-474, 2010
349 2010 P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
147 2009 Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier L Magnelli, FA Amoroso, F Crupi, G Cappuccino, G Iannaccone
International Journal of Circuit Theory and Applications 42 (9), 967-977, 2014
127 2014 On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers F Crupi, R Degraeve, G Groeseneken, T Nigam, HE Maes
IEEE Transactions on Electron Devices 45 (11), 2329-2334, 1998
116 1998 Impact strain engineering on gate stack quality and reliability C Claeys, E Simoen, S Put, G Giusi, F Crupi
Solid-State Electronics 52 (8), 1115-1126, 2008
111 2008 An ultralow-voltage energy-efficient level shifter M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016
109 2016 Degradation and hard breakdown transient of thin gate oxides in S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
100 1999 Correlation between stress-induced leakage current (silc) and the hfo/sub 2/bulk trap density in a sio/sub 2//hfo/sub 2/stack F Crupi, R Degraeve, A Kerber, DH Kwak, G Groeseneken
2004 IEEE International Reliability Physics Symposium. Proceedings, 181-187, 2004
93 2004 Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ...
IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015
91 2015 Digital and analog TFET circuits: Design and benchmark S Strangio, F Settino, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi
Solid-State Electronics 146, 50-65, 2018
80 2018 A Sub- D Albano, F Crupi, F Cucchi, G Iannaccone
IEEE Transactions on very large scale integration (VLSI) systems 23 (8 …, 2014
79 2014 Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni
IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015
78 2015 Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics G Giusi, F Crupi, C Pace, C Ciofi, G Groeseneken
IEEE Transactions on Electron Devices 53 (4), 823-828, 2006
71 2006 Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits F Settino, M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni, L Selmi
IEEE Transactions on Electron Devices 64 (6), 2736-2743, 2017
70 2017 Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
70 2011 Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories LM Procel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ...
Journal of Applied Physics 114 (7), 2013
69 2013 On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge E Simoen, F De Stefano, G Eneman, B De Jaeger, C Claeys, F Crupi
IEEE Electron Device Letters 30 (5), 562-564, 2009
69 2009 Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys
IEEE Electron Device Letters 27 (8), 688-691, 2006
68 2006 Electrical and thermal transient during dielectric breakdown of thin oxides in metal- S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ...
Journal of applied physics 84 (1), 472-479, 1998
68 1998 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
67 2010 
Marco LanuzzaUniversity of CalabriaOverená e-mailová adresa na: deis.unical.it