TD-SRAM: Time-domain-based in-memory computing macro for binary neural networks J Song, Y Wang, M Guo, X Ji, K Cheng, Y Hu, X Tang, R Wang, R Huang IEEE Transactions on Circuits and Systems I: Regular Papers 68 (8), 3377-3387, 2021 | 57 | 2021 |
A 65 nm 73 kb SRAM-based computing-in-memory macro with dynamic-sparsity controlling X Qiao, J Song, X Tang, H Luo, N Pan, X Cui, R Wang, Y Wang IEEE Transactions on Circuits and Systems II: Express Briefs 69 (6), 2977-2981, 2022 | 23 | 2022 |
Parallel convolutional neural network (CNN) accelerators based on stochastic computing Y Zhang, X Zhang, J Song, Y Wang, R Huang, R Wang 2019 IEEE International Workshop on Signal Processing Systems (SiPS), 19-24, 2019 | 21 | 2019 |
A 28 nm 16 kb bit-scalable charge-domain transpose 6T SRAM in-memory computing macro J Song, X Tang, X Qiao, Y Wang, R Wang, R Huang IEEE Transactions on Circuits and Systems I: Regular Papers 70 (5), 1835-1845, 2023 | 20 | 2023 |
Energy-and area-efficient Fe-FinFET-based time-domain mixed-signal computing in memory for edge machine learning J Luo, W Xu, Y Du, B Fu, J Song, Z Fu, M Yang, Y Li, L Ye, Q Huang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 19.5. 1-19.5. 4, 2021 | 19 | 2021 |
A parallel bitstream generator for stochastic computing Y Zhang, R Wang, X Zhang, Z Zhang, J Song, Z Zhang, Y Wang, R Huang 2019 Silicon Nanoelectronics Workshop (SNW), 1-2, 2019 | 19 | 2019 |
A 28nm 32Kb SRAM computing-in-memory macro with hierarchical capacity attenuator and input sparsity-optimized ADC for 4b MAC operation K Xiao, X Cui, X Qiao, J Song, H Luo, X Wang, Y Wang IEEE Transactions on Circuits and Systems II: Express Briefs 70 (6), 1816-1820, 2023 | 15 | 2023 |
A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC J Song, X Tang, H Luo, H Zhang, X Qiao, Z Sun, X Yang, Y Wang, ... 2023 IEEE Custom Integrated Circuits Conference (CICC), 1-2, 2023 | 13 | 2023 |
Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ... IEEE Transactions on Electron Devices 70 (3), 914-920, 2023 | 12 | 2023 |
A 16Kb transpose 6T SRAM in-memory-computing macro based on robust charge-domain computing J Song, Y Wang, X Tang, R Wang, R Huang 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC), 1-3, 2021 | 12 | 2021 |
Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling Z Sun, W Luo, Y Jiao, Z Zhang, J Song, L Zhang, Z Wang, J Zhang, ... IEEE Transactions on Electron Devices, 2023 | 8 | 2023 |
An energy-efficient mixed-signal parallel multiply-accumulate (MAC) engine based on stochastic computing X Zhang, J Song, Y Wang, Y Zhang, Z Zhang, R Wang, R Huang 2019 IEEE 13th International Conference on ASIC (ASICON), 1-4, 2019 | 8 | 2019 |
A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM J Song, X Tang, H Luo, H Zhang, X Qiao, Z Sun, X Yang, Z Wu, Y Wang, ... IEEE Journal of Solid-State Circuits, 2023 | 7 | 2023 |
Spike-CIM: A 290TOPS/W Spike-Encoding Sparsity-Adaptive Computing-in-Memory Macro with Differential Charge-Domain Integrate-and-Fire J Song, X Tang, H Luo, K Xu, Y Wang, Z Ji, R Wang, R Huang 2022 IEEE Asian Solid-State Circuits Conference (A-SSCC), 1-3, 2022 | 7 | 2022 |
SAGERoute: Synergistic Analog Routing Considering Geometric and Electrical Constraints with Manual Design Compatibility H Zhang, X Gao, H Luo, J Song, X Tang, J Liu, Y Lin, R Wang, R Huang 2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2023 | 6 | 2023 |
A 28-nm 198.9-TOPS/W fault-tolerant stochastic computing neural network processor Y Hu, Y Zhang, R Wang, Z Zhang, J Song, X Tang, W Qian, Y Wang, ... IEEE Solid-State Circuits Letters 5, 198-201, 2022 | 6 | 2022 |
A 3T eDRAM in-memory physically unclonable function with spatial majority voting stabilization J Song, H Luo, X Tang, K Xu, Z Ji, Y Wang, R Wang, R Huang IEEE Solid-State Circuits Letters 5, 58-61, 2022 | 6 | 2022 |
Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ... IEEE Transactions on Electron Devices 70 (3), 921-927, 2023 | 5 | 2023 |
A 16.38 TOPS and 4.55 POPS/W SRAM Computing-in-Memory Macro for Signed Operands Computation and Batch Normalization Implementation X Qiao, Q Guo, X Tang, J Song, R Wei, M Li, R Wang, Y Wang IEEE Transactions on Circuits and Systems I: Regular Papers, 2024 | 4 | 2024 |
Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation Z Sun, P Cai, J Song, D Wang, Z Liu, L Zhou, T Zhu, Y Xue, Y Liu, Z Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 4 | 2023 |