| Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu Advanced Materials 24 (14), 1844, 2012 | 675 | 2012 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 658 | 2019 |
| Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu ACS nano 4 (10), 6162-6168, 2010 | 495 | 2010 |
| An artificial neuron based on a threshold switching memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ... IEEE Electron Device Letters 39 (2), 308-311, 2017 | 368 | 2017 |
| Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu Advanced Functional Materials 24 (36), 5679-5686, 2014 | 357 | 2014 |
| Reproducible unipolar resistance switching in stoichiometric ZrO2 films X Wu, P Zhou, J Li, LY Chen, HB Lv, YY Lin, TA Tang Applied Physics Letters 90 (18), 2007 | 248 | 2007 |
| Breaking the current‐retention dilemma in cation‐based resistive switching devices utilizing graphene with controlled defects X Zhao, J Ma, X Xiao, Q Liu, L Shao, D Chen, S Liu, J Niu, X Zhang, ... Advanced materials 30 (14), 1705193, 2018 | 235 | 2018 |
| Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu Adv. Mater 28 (48), 10623-10629, 2016 | 235 | 2016 |
| A highly CMOS compatible hafnia-based ferroelectric diode Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang, R Huang, W Wei, ... Nature communications 11 (1), 1391, 2020 | 214 | 2020 |
| Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials Y Li, S Long, Q Liu, H Lv, M Liu Small 13 (35), 1604306, 2017 | 206 | 2017 |
| Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2Thin Films R Cao, Y Wang, S Zhao, Y Yang, X Zhao, W Wang, X Zhang, H Lv, Q Liu, ... IEEE Electron Device Letters 39 (8), 1207-1210, 2018 | 197 | 2018 |
| Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics Q He, W Mu, H Dong, S Long, Z Jia, H Lv, Q Liu, M Tang, X Tao, M Liu Applied Physics Letters 110 (9), 2017 | 188 | 2017 |
| Confining cation injection to enhance CBRAM performance by nanopore graphene layer X Zhao, S Liu, J Niu, L Liao, Q Liu, X Xiao, H Lv, S Long, W Banerjee, W Li, ... Small 13 (35), 1603948, 2017 | 180 | 2017 |
| Emulating short-term and long-term plasticity of bio-synapse based on Cu/a-Si/Pt memristor X Zhang, S Liu, X Zhao, F Wu, Q Wu, W Wang, R Cao, Y Fang, H Lv, ... IEEE Electron Device Letters 38 (9), 1208-1211, 2017 | 173 | 2017 |
| Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu, W Wu, H Sun, Y Guo, ... Nature communications 12 (1), 7232, 2021 | 165 | 2021 |
| Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory H Lv, X Xu, H Liu, R Liu, Q Liu, W Banerjee, H Sun, S Long, L Li, M Liu Scientific reports 5 (1), 1-6, 2015 | 157 | 2015 |
| Thermal crosstalk in 3-dimensional RRAM crossbar array P Sun, N Lu, L Li, Y Li, H Wang, H Lv, Q Liu, S Long, S Liu, M Liu Scientific reports 5 (1), 13504, 2015 | 152 | 2015 |
| Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film Y Cheng, Z Gao, KH Ye, HW Park, Y Zheng, Y Zheng, J Gao, MH Park, ... Nature communications 13 (1), 645, 2022 | 146 | 2022 |
| Conductance quantization in resistive random access memory Y Li, S Long, Y Liu, C Hu, J Teng, Q Liu, H Lv, J Suñé, M Liu Nanoscale research letters 10, 1-30, 2015 | 140 | 2015 |
| Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ... Advanced Materials 32 (47), 2003018, 2020 | 139 | 2020 |
Qi LiuFudan UniversityOverená e-mailová adresa na: ime.ac.cn