| A Compact Model for Metal–Oxide Resistive Random Access Memory With Experiment Verification Z Jiang, Y Wu, S Yu, L Yang, K Song, Z Karim, HSP Wong IEEE Transactions on Electron Devices 63 (5), 1884-1892, 2016 | 251 | 2016 |
| Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations YN Liang Zhao, Hong-Yu Chen, Shih-Chieh Wu, Zizhen Jiang, Shimeng Yu, Tuo ... Nanoscale 6 (11), 5698-5702, 2014 | 195 | 2014 |
| Metal oxide-resistive memory using graphene-edge electrodes S Lee, J Sohn, Z Jiang, HY Chen, HSP Wong Nature communications 6, 8407, 2015 | 168 | 2015 |
| Verilog-A compact model for oxide-based resistive random access memory (RRAM) Z Jiang, S Yu, Y Wu, JH Engel, X Guan, HSP Wong 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 161 | 2014 |
| Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, XY Liu, JF Kang, ... 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015 | 116 | 2015 |
| Design and optimization methodology for 3D RRAM arrays Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ... 2013 IEEE International Electron Devices Meeting, 25.7. 1-25.7. 4, 2013 | 65 | 2013 |
| 3D vertical RRAM-scaling limit analysis and demonstration of 3D array operation S Yu, HY Chen, Y Deng, B Gao, Z Jiang, J Kang, HSP Wong 2013 Symposium on VLSI Technology, T158-T159, 2013 | 65 | 2013 |
| Ultrathin (∼2nm) HfOxas the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration L Zhao, Z Jiang, HY Chen, J Sohn, K Okabe, B Magyari-Köpe, HSP Wong, ... 2014 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2014 | 47 | 2014 |
| 1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays C Ahn, Z Jiang, CS Lee, HY Chen, J Liang, LS Liyanage, HSP Wong IEEE Transactions on Electron Devices 62 (7), 2197-2204, 2015 | 41 | 2015 |
| Write disturb analyses on half-selected cells of cross-point RRAM arrays H Li, HY Chen, Z Chen, B Chen, R Liu, G Qiu, P Huang, F Zhang, Z Jiang, ... 2014 IEEE International Reliability Physics Symposium, MY. 3.1-MY. 3.4, 2014 | 40 | 2014 |
| Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory HY Chen, S Yu, B Gao, R Liu, Z Jiang, Y Deng, B Chen, J Kang, ... Nanotechnology 24 (46), 465201, 2013 | 36 | 2013 |
| Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture Z Jiang, S Qin, H Li, S Fujii, D Lee, S Wong, HSP Wong IEEE Transactions on Electron Devices 66 (12), 5147-5154, 2019 | 32 | 2019 |
| Atomically thin graphene plane electrode for 3D RRAM J Sohn, S Lee, Z Jiang, HY Chen, HSP Wong 2014 IEEE International Electron Devices Meeting, 5.3. 1-5.3. 4, 2014 | 28 | 2014 |
| Ultra-Low Power Ni/HfO 2/TiO x/TiN Resistive Random Access Memory With Sub-30-nA Reset Current K Zhang, K Sun, F Wang, Y Han, Z Jiang, J Zhao, B Wang, H Zhang, ... IEEE Electron Device Letters 36 (10), 1018-1020, 2015 | 25 | 2015 |
| Next-generation ultrahigh-density 3-D vertical resistive switching memory (VRSM)—Part I: Accurate and computationally efficient modeling S Qin, Z Jiang, H Li, S Fujii, D Lee, SS Wong, HSP Wong IEEE Transactions on Electron Devices 66 (12), 5139-5146, 2019 | 24 | 2019 |
| Design guidelines for 3D RRAM cross-point architecture S Yu, Y Deng, B Gao, P Huang, B Chen, X Liu, J Kang, HY Chen, Z Jiang, ... 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 421-424, 2014 | 24 | 2014 |
| Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ... 2016 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2016 | 20 | 2016 |
| Improved multi-level control of RRAM using pulse-train programming L Zhao, HY Chen, SC Wu, Z Jiang, S Yu, TH Hou, HSP Wong, Y Nishi Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014 | 20 | 2014 |
| First demonstration of RRAM patterned by block copolymer self-assembly Y Wu, H Yi, Z Zhang, Z Jiang, J Sohn, S Wong, HSP Wong 2013 IEEE International Electron Devices Meeting, 20.8. 1-20.8. 4, 2013 | 20 | 2013 |
| 3-D resistive memory arrays: From intrinsic switching behaviors to optimization guidelines H Li, B Gao, HYH Chen, Z Chen, P Huang, R Liu, L Zhao, ZJ Jiang, L Liu, ... IEEE Transactions on Electron Devices 62 (10), 3160-3167, 2015 | 19 | 2015 |
