| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 226 | 2020 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 197 | 2021 |
| Hybrid 2D–CMOS microchips for memristive applications K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ... Nature 618 (7963), 57-62, 2023 | 174 | 2023 |
| Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature Communications 15 (1), 1974, 2024 | 122 | 2024 |
| Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda IEEE Access 8, 202174-202193, 2020 | 29 | 2020 |
| High-performance van der Waals antiferroelectric CuCrP2S6-based memristors Y Ma, Y Yan, L Luo, S Pazos, C Zhang, X Lv, M Chen, C Liu, Y Wang, ... Nature Communications 14 (1), 7891, 2023 | 26 | 2023 |
| Solution-processed memristors: performance and reliability S Pazos, X Xu, T Guo, K Zhu, HN Alshareef, M Lanza Nature Reviews Materials 9, 358–373, 2024 | 24 | 2024 |
| Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller S Pazos, W Zheng, T Zanotti, F Aguirre, T Becker, Y Shen, K Zhu, Y Yuan, ... Nanoscale 15 (5), 2171-2180, 2023 | 21 | 2023 |
| High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors S Pazos, T Becker, MA Villena, W Zheng, Y Shen, Y Yuan, O Alharbi, ... Advanced Functional Materials 34 (15), 2213816, 2024 | 19 | 2024 |
| Inkjet-printed h-BN memristors for hardware security K Zhu, G Vescio, S González-Torres, J López-Vidrier, JL Frieiro, S Pazos, ... Nanoscale 15 (23), 9985-9992, 2023 | 19 | 2023 |
| Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials S Pazos, F Aguirre, E Miranda, S Lombardo, F Palumbo Journal of Applied Physics 121 (9), 2017 | 18 | 2017 |
| Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides FL Aguirre, A Rodriguez-Fernandez, SM Pazos, J Suñé, E Miranda, ... IEEE Transactions on Electron Devices 66 (8), 3349-3355, 2019 | 17 | 2019 |
| Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition FL Aguirre, NM Gomez, SM Pazos, F Palumbo, J Suñé, E Miranda Journal of Low Power Electronics and Applications 11 (1), 9, 2021 | 14 | 2021 |
| SPICE simulation of RRAM-based cross-point arrays using the dynamic memdiode model FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda Frontiers in Physics 9, 735021, 2021 | 12 | 2021 |
| Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study SM Pazos, S Boyeras Baldomá, FL Aguirre, I Krylov, M Eizenberg, ... Journal of Applied Physics 127 (17), 2020 | 12 | 2020 |
| Roadmap to neuromorphic computing with emerging technologies A Mehonic, D Ielmini, K Roy, O Mutlu, S Kvatinsky, ... APL Materials 12 (10), 2024 | 9 | 2024 |
| Reliability-aware design space exploration for fully integrated RF CMOS PA S Pazos, F Aguirre, F Palumbo, F Silveira IEEE Transactions on Device and Materials Reliability 20 (1), 33-41, 2019 | 8 | 2019 |
| Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications S Pazos, Y Shen, H Zhang, J Verdú, A Fontana, W Zheng, Y Yuan, ... Nature Electronics 7 (7), 557-566, 2024 | 6 | 2024 |
| Hot-carrier-injection resilient RF power amplifier using adaptive bias SM Pazos, FL Aguirre, F Palumbo, F Silveira Microelectronics Reliability 114, 113912, 2020 | 6 | 2020 |
| Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks F Aguirre, S Pazos, FRM Palumbo, S Fadida, R Winter, M Eizenberg Journal of Applied Physics 123 (13), 2018 | 6 | 2018 |
Fernando Leonel AguirreSenior Device Engineer, Intrinsic Semiconductor Technologies Ltd.Overená e-mailová adresa na: intrinsicsemi.com