| Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402, 2019 | 208 | 2019 |
| Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020 | 127 | 2020 |
| GaN FinFETs and trigate devices for power and RF applications: Review and perspective Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios Semiconductor Science and Technology 36 (5), 054001, 2021 | 118 | 2021 |
| Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability M Xiao, B Wang, J Liu, R Zhang, Z Zhang, C Ding, S Lu, K Sasaki, GQ Lu, ... IEEE Transactions on Power Electronics 36 (8), 8565-8569, 2021 | 112 | 2021 |
| 1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability J Liu, M Xiao, R Zhang, S Pidaparthi, H Cui, A Edwards, M Craven, ... IEEE Transactions on Electron Devices 68 (4), 2025-2032, 2021 | 104 | 2021 |
| An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics F Zhou, H Gong, M Xiao, Y Ma, Z Wang, X Yu, L Li, L Fu, HH Tan, Y Yang, ... Nature Communications 14 (1), 4459, 2023 | 100 | 2023 |
| 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes M Xiao, Y Ma, K Liu, K Cheng, Y Zhang IEEE Electron Device Letters 42 (6), 808-811, 2021 | 98 | 2021 |
| 3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination M Xiao, Y Ma, K Cheng, K Liu, A Xie, E Beam, Y Cao, Y Zhang IEEE Electron Device Letters 41 (8), 1177-1180, 2020 | 96 | 2020 |
| 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension B Wang, M Xiao, J Spencer, Y Qin, K Sasaki, MJ Tadjer, Y Zhang IEEE Electron Device Letters 44 (2), 221-224, 2022 | 81 | 2022 |
| 1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities J Liu, M Xiao, Y Zhang, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2020 | 81 | 2020 |
| High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K B Wang, M Xiao, X Yan, HY Wong, J Ma, K Sasaki, H Wang, Y Zhang Applied Physics Letters 115 (26), 2019 | 79 | 2019 |
| Dynamic breakdown voltage of GaN power HEMTs R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang 2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020 | 68 | 2020 |
| Surge current and avalanche ruggedness of 1.2-kV vertical GaN pn diodes J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... IEEE Transactions on Power Electronics 36 (10), 10959-10964, 2021 | 64 | 2021 |
| Leakage and breakdown mechanisms of GaN vertical power FinFETs M Xiao, X Gao, T Palacios, Y Zhang Applied physics letters 114 (16), 2019 | 62 | 2019 |
| Improvement of TCAD augmented machine learning using autoencoder for semiconductor variation identification and inverse design K Mehta, SS Raju, M Xiao, B Wang, Y Zhang, HY Wong IEEE Access 8, 143519-143529, 2020 | 60 | 2020 |
| Design and simulation of GaN superjunction transistors with 2-DEG channels and fin channels M Xiao, R Zhang, D Dong, H Wang, Y Zhang IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 59 | 2019 |
| TCAD-augmented machine learning with and without domain expertise H Dhillon, K Mehta, M Xiao, B Wang, Y Zhang, HY Wong IEEE Transactions on Electron Devices 68 (11), 5498-5503, 2021 | 58 | 2021 |
| Trap-mediated avalanche in large-area 1.2 kV vertical GaN pn diodes J Liu, M Xiao, R Zhang, S Pidaparthi, C Drowley, L Baubutr, A Edwards, ... IEEE Electron Device Letters 41 (9), 1328-1331, 2020 | 58 | 2020 |
| Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN M Xiao, Z Du, J Xie, E Beam, X Yan, K Cheng, H Wang, Y Cao, Y Zhang Applied Physics Letters 116 (5), 2020 | 56 | 2020 |
| TCAD-machine learning framework for device variation and operating temperature analysis with experimental demonstration HY Wong, M Xiao, B Wang, YK Chiu, X Yan, J Ma, K Sasaki, H Wang, ... IEEE Journal of the Electron Devices Society 8, 992-1000, 2020 | 55 | 2020 |
Yuhao ZhangUniversity of Hong KongOverená e-mailová adresa na: hku.hk