| Co-designing electronics with microfluidics for more sustainable cooling R Van Erp, R Soleimanzadeh, L Nela, G Kampitsis, E Matioli Nature 585 (7824), 211-216, 2020 | 736 | 2020 |
| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 443 | 2021 |
| Large-area high-performance flexible pressure sensor with carbon nanotube active matrix for electronic skin L Nela, J Tang, Q Cao, G Tulevski, SJ Han Nano letters 18 (3), 2054-2059, 2018 | 208 | 2018 |
| Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays J Tang, Q Cao, G Tulevski, KA Jenkins, L Nela, DB Farmer, SJ Han Nature Electronics 1 (3), 191-196, 2018 | 170 | 2018 |
| Performance of GaN power devices for cryogenic applications down to 4.2 K L Nela, N Perera, C Erine, E Matioli IEEE Transactions on Power Electronics 36 (7), 7412-7416, 2020 | 82 | 2020 |
| Multi-channel nanowire devices for efficient power conversion L Nela, J Ma, C Erine, P Xiang, TH Shen, V Tileli, T Wang, K Cheng, ... Nature Electronics 4 (4), 284-290, 2021 | 75 | 2021 |
| Scalable nanostructured carbon electrode arrays for enhanced dopamine detection S Demuru, L Nela, N Marchack, SJ Holmes, DB Farmer, GS Tulevski, ... ACS sensors 3 (4), 799-805, 2018 | 64 | 2018 |
| High-voltage normally-off recessed tri-gate GaN power MOSFETs with low on-resistance M Zhu, J Ma, L Nela, C Erine, E Matioli IEEE Electron Device Letters 40 (8), 1289-1292, 2019 | 39 | 2019 |
| Ultra-compact, high-frequency power integrated circuits based on GaN-on-Si Schottky barrier diodes L Nela, R Van Erp, G Kampitsis, HK Yildirim, J Ma, E Matioli IEEE Transactions on Power Electronics 36 (2), 1269-1273, 2020 | 38 | 2020 |
| High-performance nanowire-based E-mode power GaN MOSHEMTs with large work-function gate metal L Nela, M Zhu, J Ma, E Matioli IEEE Electron Device Letters 40 (3), 439-442, 2019 | 36 | 2019 |
| Impact of fin width on tri-gate GaN MOSHEMTs J Ma, G Santoruvo, L Nela, T Wang, E Matioli IEEE Transactions on Electron Devices 66 (9), 4068-4074, 2019 | 35 | 2019 |
| 1200 V multi-channel power devices with 2.8 Ω• mm ON-resistance J Ma, C Erine, M Zhu, N Luca, P Xiang, K Cheng, E Matioli 2019 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2019 | 34 | 2019 |
| P-GaN tri-gate MOS structure for normally-off GaN power transistors M Zhu, C Erine, J Ma, MS Nikoo, L Nela, P Sohi, E Matioli IEEE Electron Device Letters 42 (1), 82-85, 2020 | 31 | 2020 |
| Fast-switching tri-anode Schottky barrier diodes for monolithically integrated GaN-on-Si power circuits L Nela, G Kampitsis, J Ma, E Matioli IEEE Electron Device Letters 41 (1), 99-102, 2019 | 31 | 2019 |
| A perspective on multi-channel technology for the next-generation of GaN power devices L Nela, M Xiao, Y Zhang, E Matioli Applied Physics Letters 120 (19), 2022 | 30 | 2022 |
| Embedded microchannel cooling for high power-density GaN-on-Si power integrated circuits R Van Erp, G Kampitsis, L Nela, RS Ardebili, E Matioli 2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2020 | 28 | 2020 |
| Conformal passivation of multi-channel GaN power transistors for reduced current collapse L Nela, HK Yildirim, C Erine, R Van Erp, P Xiang, K Cheng, E Matioli IEEE Electron Device Letters 42 (1), 86-89, 2020 | 25 | 2020 |
| Impact of embedded liquid cooling on the electrical characteristics of GaN-on-Si power transistors L Nela, R Van Erp, N Perera, A Jafari, C Erine, E Matioli IEEE Electron Device Letters 42 (11), 1642-1645, 2021 | 16 | 2021 |
| Output-capacitance hysteresis losses of field-effect transistors N Perera, A Jafari, L Nela, G Kampitsis, MS Nikoo, E Matioli 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics …, 2020 | 15 | 2020 |
| Figures-of-merit of lateral GaN power devices: Modeling and comparison of HEMTs and PSJs L Nela, C Erine, MV Oropallo, E Matioli IEEE Journal of the Electron Devices Society 9, 1066-1075, 2021 | 14 | 2021 |
Elison MatioliEcole Polytechnique Fédérale de Lausanne (EPFL)Overená e-mailová adresa na: epfl.ch