| Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties M Moun, M Kumar, M Garg, R Pathak, R Singh Scientific reports 8 (1), 11799, 2018 | 122 | 2018 |
| High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors BR Tak, M Garg, S Dewan, CG Torres-Castanedo, KH Li, V Gupta, X Li, ... Journal of Applied Physics 125 (14), 2019 | 107 | 2019 |
| Giant UV photoresponse of GaN-based photodetectors by surface modification using phenol-functionalized porphyrin organic molecules M Garg, BR Tak, VR Rao, R Singh ACS applied materials & interfaces 11 (12), 12017-12026, 2019 | 67 | 2019 |
| Gamma irradiation effect on performance of β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors for space applications BR Tak, M Garg, A Kumar, V Gupta, R Singh ECS Journal of Solid State Science and Technology 8 (7), Q3149, 2019 | 60 | 2019 |
| Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance S Kaushik, TR Naik, A Alka, M Garg, BR Tak, M Ravikanth, VR Rao, ... ACS Applied Electronic Materials 2 (3), 739-746, 2020 | 45 | 2020 |
| Misorientation-controlled cross-plane thermoelectricity in twisted bilayer graphene PS Mahapatra, B Ghawri, M Garg, S Mandal, K Watanabe, T Taniguchi, ... Physical Review Letters 125 (22), 226802, 2020 | 39 | 2020 |
| Breakdown of semiclassical description of thermoelectricity in near-magic angle twisted bilayer graphene B Ghawri, PS Mahapatra, M Garg, S Mandal, S Bhowmik, A Jayaraman, ... Nature Communications 13 (1), 1522, 2022 | 37 | 2022 |
| Investigation of significantly high barrier height in Cu/GaN Schottky diode M Garg, A Kumar, S Nagarajan, M Sopanen, R Singh AIP Advances 6 (1), 2016 | 37 | 2016 |
| Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces M Garg, TR Naik, CS Pathak, S Nagarajan, VR Rao, R Singh Applied Physics Letters 112 (16), 2018 | 28 | 2018 |
| Heat equilibration of integer and fractional quantum Hall edge modes in graphene G Le Breton, R Delagrange, Y Hong, M Garg, K Watanabe, T Taniguchi, ... Physical Review Letters 129 (11), 116803, 2022 | 25 | 2022 |
| Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules M Garg, TR Naik, R Pathak, VR Rao, CH Liao, KH Li, H Sun, X Li, R Singh Journal of Applied Physics 124 (19), 2018 | 22 | 2018 |
| Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations A Kumar, R Kapoor, M Garg, V Kumar, R Singh Nanotechnology 28 (26), 26LT02, 2017 | 18 | 2017 |
| Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization M Garg, A Kumar, H Sun, CH Liao, X Li, R Singh Journal of Alloys and Compounds 806, 852-857, 2019 | 16 | 2019 |
| Cu–Ni alloy decorated graphite layers for EMI suppression S Kumari, A Kumar, AP Singh, M Garg, PK Dutta, SK Dhawan, RB Mathur RSC Advances 4 (44), 23202-23209, 2014 | 15 | 2014 |
| Current transport properties of monolayer graphene/n-Si Schottky diodes CS Pathak, M Garg, JP Singh, R Singh Semiconductor Science and Technology 33 (5), 055006, 2018 | 14 | 2018 |
| High-temperature photocurrent mechanism of BR Tak, M Garg, S Dewan, CG Torres-Castanedo, KH Li, V Gupta J. Appl. Phys 125 (14), 2019 | 13 | 2019 |
| Enhanced performance of MSM UV photodetectors by molecular modification of gallium nitride using porphyrin organic molecules M Garg, BR Tak, VR Rao, R Singh IEEE Transactions on Electron Devices 66 (4), 2036-2039, 2019 | 13 | 2019 |
| Quantum Hall interferometry in triangular domains of marginally twisted bilayer graphene PS Mahapatra, M Garg, B Ghawri, A Jayaraman, K Watanabe, ... Nano Letters 22 (14), 5708-5714, 2022 | 10 | 2022 |
| Excess entropy and breakdown of semiclassical description of thermoelectricity in twisted bilayer graphene close to half filling B Ghawri, PS Mahapatra, S Mandal, A Jayaraman, M Garg, K Watanabe, ... arXiv preprint arXiv:2004.12356, 2020 | 9 | 2020 |
| Tailoring the transfer characteristics and hysteresis in MoS 2 transistors using substrate engineering P Prasad, M Garg, U Chandni Nanoscale 12 (46), 23817-23823, 2020 | 7 | 2020 |
Rajendra SinghIndian Institute of Technology DelhiOverená e-mailová adresa na: physics.iitd.ac.in