Yordan M. Georgiev, PhD

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	Všetky	Od 2020
Citácie	1514	695
h-index	21	13
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41 článkov

6 článkov

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Na základe mandátov na financovanie

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Justin D. HolmesProfessor of NanochemistryOverená e-mailová adresa na: ucc.ie
Anushka GangnaikUniversity of SouthamptonOverená e-mailová adresa na: soton.ac.uk
Artur ErbeNanoelectronics Department, Institute of Ion Beam Physics and Materials Research, Helmholtz-ZentrumOverená e-mailová adresa na: hzdr.de
Prof.Dr. Heinrich KurzWissenschaftlicher Direktor AMO GmbH, 1993-2016 (verstorben)Overená e-mailová adresa na: amo.de
Manfred HelmInstitute Director at Helmholtz-Zentrum Dresden-Rossendorf, and Professor of Physics, TU DresdenOverená e-mailová adresa na: hzdr.de
Adrian NightingaleLecturer in Microfluidics & Sensor Design, Engineering, University of SouthamptonOverená e-mailová adresa na: southampton.ac.uk
Samaresh Das, Prof.Indian institute of technology, Tyndall National Institute, Hitachi Cambridge LabOverená e-mailová adresa na: care.iitd.ac.in
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHOverená e-mailová adresa na: eld.rwth-aachen.de
Elizabeth BuitragoHitachi EnergyOverená e-mailová adresa na: hitachienergy.com
A.M. IonescuProfessor of NanoelectronicsOverená e-mailová adresa na: epfl.ch
Roisin KellySenior Project Engineer, StrykerOverená e-mailová adresa na: stryker.com
John O'ConnellR&D Process Engineer at AlconOverená e-mailová adresa na: alcon.com
Maryam shayestehUniversity of SouthamptonOverená e-mailová adresa na: soton.ac.uk
Dr. Vladimir DjaraAlbis OptoelectronicsOverená e-mailová adresa na: albisopto.com
Cian CumminsimecOverená e-mailová adresa na: imec.be
Dipu BorahTrinity College Dublin, IrelandOverená e-mailová adresa na: tcd.ie
Subhajit BiswasSchool of Chemistry, Tyndall National Institute, University College CorkOverená e-mailová adresa na: ucc.ie
Giorgos FagasTyndall National InstituteOverená e-mailová adresa na: tyndall.ie
Richard HobbsAssistant Professor & Royal Society-Science Foundation Ireland University Research Fellow, TrinityOverená e-mailová adresa na: tcd.ie
Rossen YankovSenior Research Scientist, Helmholtz-Zentrum Dresden-Rossendorf, FWIZ-I, Dresden, GermanyOverená e-mailová adresa na: hzdr.de

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Yordan M. Georgiev, PhD

Head of Nanofabrication, I-te of Ion Beam Phys. & Mat. Res., Helmholtz-Centrum Dresden-Rossendorf

Overená e-mailová adresa na: hzdr.de

Nanotechnology Nanofabrication Nanoelectronics Biosensors Semiconductor nanowires


Názov Zoradiť podľa citácií Zoradiť podľa roka Zoradiť podľa názvu	Citované v Citované v	Rok
Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist W Henschel, YM Georgiev, H Kurz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003	215	2003
New generation electron beam resists: a review AS Gangnaik, YM Georgiev, JD Holmes Chemistry of Materials 29 (5), 1898-1917, 2017	194	2017
Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer C Cummins, A Gangnaik, RA Kelly, D Borah, J O'Connell, N Petkov, ... Nanoscale 7 (15), 6712-6721, 2015	65	2015
Observation of ultrafast solid-density plasma dynamics using femtosecond X-ray pulses from a free-electron laser T Kluge, M Rödel, J Metzkes-Ng, A Pelka, AL Garcia, I Prencipe, ... Physical Review X 8 (3), 031068, 2018	56	2018
Organo-arsenic molecular layers on silicon for high-density doping J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ... ACS applied materials & interfaces 7 (28), 15514-15521, 2015	50	2015
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013	50	2013
Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist YM Georgiev, W Henschel, A Fuchs, H Kurz Vacuum 77 (2), 117-123, 2005	44	2005
Highly selective etch process for silicon-on-insulator nano-devices T Wahlbrink, T Mollenhauer, YM Georgiev, W Henschel, JK Efavi, ... Microelectronic Engineering 78, 212-217, 2005	42	2005
A wired-AND transistor: Polarity controllable FET with multiple inputs M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ... 2018 76th Device Research Conference (DRC), 1-2, 2018	36	2018
Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists A Gangnaik, YM Georgiev, B McCarthy, N Petkov, V Djara, JD Holmes Microelectronic engineering 123, 126-130, 2014	36	2014
Interferometric in situ alignment for UV-based nanoimprint A Fuchs, B Vratzov, T Wahlbrink, Y Georgiev, H Kurz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	35	2004
Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors E Buitrago, MFB Badia, YM Georgiev, R Yu, O Lotty, JD Holmes, ... Sensors and Actuators B: Chemical 199, 291-300, 2014	31	2014
Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers C Cummins, A Gangnaik, RA Kelly, AJ Hydes, J O’Connell, N Petkov, ... Chemistry of Materials 27 (17), 6091-6096, 2015	28	2015
Supercritical drying process for high aspect-ratio HSQ nano-structures T Wahlbrink, D Küpper, YM Georgiev, J Bolten, M Möller, D Küpper, ... Microelectronic engineering 83 (4-9), 1124-1127, 2006	27	2006
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ... Journal of Materials Chemistry C 2 (43), 9248-9257, 2014	26	2014
Junctionless nanowire transistor fabricated with high mobility Ge channel R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ... physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014	24	2014
Novel germanium surface modification for sub-10 nm patterning with electron beam lithography and hydrogen silsesquioxane resist AS Gangnaik, YM Georgiev, G Collins, JD Holmes Journal of Vacuum Science & Technology B 34 (4), 2016	23	2016
Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires MB Khan, D Deb, J Kerbusch, F Fuchs, M Löffler, S Banerjee, U Mühle, ... Applied Sciences 9 (17), 3462, 2019	22	2019
Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices YM Georgiev, N Petkov, B McCarthy, R Yu, V Djara, D O’Connell, O Lotty, ... Microelectronic engineering 118, 47-53, 2014	22	2014
Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography RG Hobbs, M Schmidt, CT Bolger, YM Georgiev, P Fleming, MA Morris, ... Journal of Vacuum Science & Technology B 30 (4), 2012	22	2012

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