Sledovať
Zhong Chen
Názov
Citované v
Citované v
Rok
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si
Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ...
Acs Photonics 6 (6), 1434-1441, 2019
1432019
Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask
Z Chen, Y Lei, HG Chew, LW Teo, WK Choi, WK Chim
Journal of Crystal Growth 268 (3-4), 560-563, 2004
552004
A highly linear temperature sensor using GaN-on-SiC heterojunction diode for high power applications
S Madhusoodhanan, S Sandoval, Y Zhao, ME Ware, Z Chen
IEEE Electron Device Letters 38 (8), 1105-1108, 2017
442017
Investigation of low-profile, high-performance 62-mm SiC power module package
J Ke, S Huang, Z Yuan, Z Zhao, X Cui, SS Ang, Z Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020
302020
Effect of threshold voltage hysteresis on switching characteristics of silicon carbide MOSFETs
Y Cai, H Xu, P Sun, J Ke, E Deng, Z Zhao, X Li, Z Chen
IEEE Transactions on Electron Devices 68 (10), 5014-5021, 2021
282021
An online junction temperature monitoring correction method for SiC MOSFETs at different parasitic parameters
P Sun, Y Guo, T Wu, Z Zhao, P Lai, Z Chen, L Qi, X Cui
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021
262021
Device screening strategy for balancing short-circuit behavior of paralleling silicon carbide MOSFETs
J Ke, Z Zhao, Q Zou, J Peng, Z Chen, X Cui
IEEE Transactions on Device and Materials Reliability 19 (4), 757-765, 2019
252019
High temperature and power dependent photoluminescence analysis on commercial lighting and display LED materials for future power electronic modules
A Sabbar, S Madhusoodhanan, S Al-Kabi, B Dong, J Wang, S Atcitty, ...
Scientific Reports 9 (1), 16758, 2019
192019
Characterization of a silicon carbide BCD process for 300° C circuits
A Abbasi, S Roy, R Murphree, AU Rashid, MM Hossain, P Lai, J Fraley, ...
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019
192019
LTCC based current sensor for silicon carbide power module integration
P Sun, X Cui, S Huang, P Lai, Z Zhao, Z Chen
IEEE Transactions on Power Electronics 37 (2), 1605-1614, 2021
182021
Characterization of Gate-Oxide Degradation Location for SiC MOSFETs Based on the Split C–V Method Under Bias Temperature Instability Conditions
Y Cai, C Chen, Z Zhao, P Sun, X Li, M Zhang, H Wang, Z Chen, HP Nee
IEEE Transactions on Power Electronics 38 (5), 6081-6093, 2023
142023
A tutorial on high-density power module packaging
Y Chen, A Iradukunda, HA Mantooth, Z Chen, D Huitink
IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (3 …, 2022
142022
High-temperature analysis of GaN-based MQW photodetector for optical galvanic isolations in high-density integrated power modules
S Madhusoodhanan, A Sabbar, H Tran, B Dong, J Wang, A Mantooth, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (4 …, 2020
142020
High-temperature analysis of GaN-Based Blue-LEDs for future power electronic applications
S Madhusoodhanan, A Sabbar, S Atcitty, RJ Kaplar, HA Mantooth, SQ Yu, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (4 …, 2019
142019
USB controller ESD protection apparatus and method
Z Chen, RB Wade III, M Xiao
US Patent 10,424,950, 2019
142019
A molecular memory device formed by HfO2 encapsulation of redox-active molecules
Z Chen, B Lee, S Sarkar, S Gowda, V Misra
Applied Physics Letters 91 (17), 2007
142007
High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules
S Madhusoodhanan, A Sabbar, H Tran, P Lai, D Gonzalez, A Mantooth, ...
Scientific Reports 12 (1), 3168, 2022
132022
Systematic investigation of spontaneous emission quantum efficiency drop up to 800 K for future power electronics applications
A Sabbar, S Madhusoodhanan, S Al-Kabi, B Dong, J Wang, S Atcitty, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 845-853, 2018
122018
Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)
E Wangila, SK Saha, R Kumar, A Kuchuk, C Gunder, S Amoah, ...
CrystEngComm 24 (24), 4372-4380, 2022
102022
Highly linear temperature sensor using GaN-on-SiC heterojunction diode for Harsh environment applications
S Madhusoodhanan, S Koukourinkova, T White, Z Chen, Y Zhao, ...
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
102016
Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.
Články 1–20