Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration K Sreenivas, I Reaney, T Maeder, N Setter, C Jagadish, RG Elliman
Journal of Applied Physics 75 (1), 232-239, 1994
346 1994 Unconventional magnetism in all-carbon nanofoam AV Rode, EG Gamaly, AG Christy, JG Fitz Gerald, ST Hyde, RG Elliman, ...
Physical Review B—Condensed Matter and Materials Physics 70 (5), 054407, 2004
330 2004 Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon JS Williams, RG Elliman, WL Brown, TE Seidel
Physical review letters 55 (14), 1482, 1985
253 1985 Role of electronic processes in epitaxial recrystallization of amorphous semiconductors JS Williams, RG Elliman
Physical review letters 51 (12), 1069, 1983
186 1983 Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon J Linnros, RG Elliman, WL Brown
Journal of Materials Research 3 (6), 1208-1211, 1988
166 1988 Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. RG Elliman, JS Williams, WL Brown, A Leiberich, DM Maher, RV Knoell
Nucl. Instrum. Methods Phys. Res. B Beam Interact. Mater. At 19, 20, 0
151 Gettering of copper to hydrogen‐induced cavities in silicon J Wong‐Leung, CE Ascheron, M Petravic, RG Elliman, JS Williams
Applied physics letters 66 (10), 1231-1233, 1995
149 1995 Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a matrix S Cheylan, RG Elliman
Applied Physics Letters 78 (9), 1225-1227, 2001
137 2001 Structural analysis of a carbon foam formed by high pulse-rate laser ablation AV Rode, ST Hyde, EG Gamaly, RG Elliman, DR McKenzie, S Bulcock
Applied Physics A 69, S755-S758, 1999
134 1999 Optical gain in different silicon nanocrystal systems PM Fauchet, J Ruan, H Chen, L Pavesi, L Dal Negro, M Cazzaneli, ...
Optical materials 27 (5), 745-749, 2005
126 2005 Optically absorbing layers on ion beam modified polymers: a study of their evolution and properties D Fink, M Müller, LT Chadderton, PH Cannington, RG Elliman, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1988
112 1988 Crystalline-to-amorphous transition for Si-ion irradiation of Si (100) PJ Schultz, C Jagadish, MC Ridgway, RG Elliman, JS Williams
Physical Review B 44 (16), 9118, 1991
105 1991 Amorphization and graphitization of single-crystal diamond—A transmission electron microscopy study DP Hickey, KS Jones, RG Elliman
Diamond and related materials 18 (11), 1353-1359, 2009
104 2009 Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes NG Rudawski, BL Darby, BR Yates, KS Jones, RG Elliman, AA Volinsky
Applied Physics Letters 100 (8), 2012
103 2012 Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in S Cheylan, RG Elliman
Applied Physics Letters 78 (13), 1912-1914, 2001
103 2001 Amorphization of silicon by elevated temperature ion irradiation RD Goldberg, JS Williams, RG Elliman
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
102 1995 Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon JS Williams, RG Elliman
Applied Physics Letters 40 (3), 266-268, 1982
99 1982 Threshold current reduction for the metal–insulator transition in NbO2− x-selector devices: the effect of ReRAM integration SK Nandi, X Liu, DK Venkatachalam, RG Elliman
Journal of Physics D: Applied Physics 48 (19), 195105, 2015
95 2015 Threshold switching and electrical self-oscillation in niobium oxide films X Liu, S Li, SK Nandi, DK Venkatachalam, RG Elliman
Journal of Applied Physics 120 (12), 2016
91 2016 The effect of annealing environment on the luminescence of silicon nanocrystals in silica AR Wilkinson, RG Elliman
Journal of Applied Physics 96 (7), 4018-4020, 2004
89 2004