| Silicene and transition metal based materials: prediction of a two-dimensionalpiezomagnet NY Dzade, KO Obodo, SK Adjokatse, AC Ashu, E Amankwah, CD Atiso, ... Journal of Physics: Condensed Matter 22 (37), 375502, 2010 | 76 | 2010 |
| A systematic study of the stability, electronic and optical properties of beryllium and nitrogen co-doped graphene O Olaniyan, RE Maphasha, MJ Madito, AA Khaleed, E Igumbor, ... Carbon 129, 207-227, 2018 | 37 | 2018 |
| Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range VE Gora, FD Auret, HT Danga, SM Tunhuma, C Nyamhere, E Igumbor, ... Materials Science and Engineering: B 247, 114370, 2019 | 36 | 2019 |
| Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE) E Igumbor, CNM Ouma, G Webb, WE Meyer Physica B: Condensed Matter 480, 191-195, 2016 | 21 | 2016 |
| A hybrid functional calculation of Tm3+ defects in germanium (Ge) E Igumbor, WE Meyer Materials Science in Semiconductor Processing 43, 129-133, 2016 | 19 | 2016 |
| The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes E Omotoso, WE Meyer, PJJ van Rensburg, E Igumbor, SM Tunhuma, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 14 | 2017 |
| Ab Initio Study of MgSe Self-Interstitial (Mgiand Sei) E Igumbor, K Obodo, WE Meyer Solid State Phenomena 242, 440-446, 2016 | 14 | 2016 |
| A first principle hybrid functional calculation of TmGe3+-VGe defect complexes in germanium E Igumbor, RE Mapasha, R Andrew, WE Meyer Computational Condensed Matter 8, 31-35, 2016 | 13 | 2016 |
| Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons E Omotoso, AT Paradzah, PJJ van Rensburg, MJ Legodi, FD Auret, ... Surface and Coatings Technology, 2018 | 12 | 2018 |
| Ab␣ Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE) E Igumbor, RE Mapasha, WE Meyer Journal of Electronic Materials 46, 3880-3887, 2017 | 12 | 2017 |
| The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC E Omotoso, FD Auret, E Igumbor, SM Tunhuma, HT Danga, PNM Ngoepe, ... Applied Physics A 124, 1-7, 2018 | 10 | 2018 |
| Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs SM Tunhuma, FD Auret, JM Nel, E Omotoso, HT Danga, E Igumbor, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 10 | 2017 |
| Tuning the electronic structure and thermodynamic properties of hybrid graphene-hexagonal boron nitride monolayer O Olaniyan, L Moskaleva, E Igumbor, A Bello FlatChem 24, 100194, 2020 | 9 | 2020 |
| Ab-initio study of the optical properties of beryllium-sulphur co-doped graphene O Olaniyan, E Igumbor, AA Khaleed, AA Mirghni, N Manyala AIP Advances 9 (2), 2019 | 9 | 2019 |
| Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study E Igumbor, O Olaniyan, RE Mapasha, HT Danga, E Omotoso, WE Meyer Materials Science in Semiconductor Processing 89, 77-84, 2019 | 9 | 2019 |
| Rare earth interstitials in Ge: a hybrid density functional theory study E Igumbor, RC Andrew, WE Meyer Journal of Electronic Materials 46, 1022-1029, 2017 | 9 | 2017 |
| Electronic properties and defect levels induced by n/p-type defect-complexes in Ge E Igumbor, O Olaniyan, GM Dongho-Nguimdo, RE Mapasha, S Ahmad, ... Materials Science in Semiconductor Processing 150, 106906, 2022 | 7 | 2022 |
| Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width E Omotoso, AT Paradzah, E Igumbor, BA Taleatu, WE Meyer, FD Auret Materials Research Express 7 (2), 025901, 2020 | 7 | 2020 |
| First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M= In, Al; X= S, Se, Te) GM Dongho-Nguimdo, E Igumbor, S Zambou, DP Joubert Computational Condensed Matter 21, e00391, 2019 | 7 | 2019 |
| A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer RE Mapasha, E Igumbor, N Chetty Journal of Physics: Conference Series 759 (1), 012042, 2016 | 7 | 2016 |
Walter Ernst MeyerUniversity of PretoriaOverená e-mailová adresa na: up.ac.za