Zakaria Y. Al Balushi

Citované v

	Všetky	Od 2020
Citácie	1454	1083
h-index	14	12
i10-index	16	13

260

130

195

2011201220132014201520162017201820192020202120222023202420254 6 3 3 6 24 85 108 129 165 182 189 228 249 68

Verejný prístup

všetky položky

16 článkov

3 články

dostupné

nedostupné

Na základe mandátov na financovanie

Spoluautori

Joan RedwingPenn State UniversityOverená e-mailová adresa na: psu.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityOverená e-mailová adresa na: psu.edu
Yu-Chuan LinMaterials Science and Engineering, National Yang Ming Chiao Tung University (NYCU)Overená e-mailová adresa na: nycu.edu.tw
Sarah M. EichfeldPenn State UniversityOverená e-mailová adresa na: psu.edu
Joshua D. CaldwellVanderbilt UniversityOverená e-mailová adresa na: vanderbilt.edu
Xiaotian ZhangSJTUOverená e-mailová adresa na: sjtu.edu.cn
Tanushree H. ChoudhuryIndian Institute of Technology Bombay, PowaiOverená e-mailová adresa na: iitb.ac.in
Rafael A. ViláStanford UniversityOverená e-mailová adresa na: stanford.edu
Robert M. WallaceUniversity of Texas at DallasOverená e-mailová adresa na: utdallas.edu
Shruti SubramanianProcess Development Engineer, Intel CorporationOverená e-mailová adresa na: intel.com
Ram Krishna GhoshAssistant Professor, ECE, IIIT-DelhiOverená e-mailová adresa na: iiitd.ac.in
Paul A DeSarioOffice of Naval ResearchOverená e-mailová adresa na: us.navy.mil
Greg StonePennsylvania State UniversityOverená e-mailová adresa na: psu.edu
Suman DattaJoseph M. Pettit Chair ProfessorOverená e-mailová adresa na: gatech.edu
Ganesh R BhimanapatiIntel CorporationOverená e-mailová adresa na: intel.com
Nasim AlemPennsylvania State UniversityOverená e-mailová adresa na: psu.edu
Thomas N. JacksonRobert E. Kirby Chair Professor of Electrical Engineering, Penn State UniversityOverená e-mailová adresa na: psu.edu
Jiaxing HuangWestlake UniversityOverená e-mailová adresa na: westlake.edu.cn
Lincoln J LauhonNorthwestern UniversityOverená e-mailová adresa na: northwestern.edu
Justin G ConnellArgonne National LaboratoryOverená e-mailová adresa na: anl.gov

Sledovať

Zakaria Y. Al Balushi

Asst. Professor of MSE at UC Berkeley, LBNL, California Institute of Technology, Penn State

Overená e-mailová adresa na: berkeley.edu - Domovská stránka

Electronic materials synthesis Photonics 2D Materials III-V MOCVD Quantum materials


Názov Zoradiť podľa citácií Zoradiť podľa roka Zoradiť podľa názvu	Citované v Citované v	Rok
Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature Materials 15, 1166–1171, 2016	776	2016
Epitaxial growth of two-dimensional layered transition metal dichalcogenides TH Choudhury, X Zhang, ZY Al Balushi, M Chubarov, JM Redwing Annual Review of Materials Research 50 (1), 155-177, 2020	111	2020
The impact of graphene properties on GaN and AlN nucleation ZY Al Balushi, T Miyagi, YC Lin, K Wang, L Calderin, G Bhimanapati, ... Surface Science 634, 81-88, 2015	104	2015
Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ... Journal of Electronic Materials, 1-7, 2016	66	2016
All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity W Redjem, Y Zhiyenbayev, W Qarony, V Ivanov, C Papapanos, W Liu, ... Nature communications 14 (1), 3321, 2023	59	2023
An outlook into the flat land of 2D materials beyond graphene: synthesis, properties and device applications A McCreary, O Kazakova, D Jariwala, ZY Al Balushi 2D Materials 8 (1), 013001, 2020	50	2020
Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook T Vincent, J Liang, S Singh, EG Castanon, X Zhang, A McCreary, ... Applied Physics Reviews 8, 041320, 2021	48	2021
Impact of binder functional groups on controlling chemical reactions to improve stability of rechargeable zinc-ion batteries N Jaikrajang, W Kao-Ian, T Muramatsu, R Chanajaree, T Yonezawa, ... ACS Applied Energy Materials 4 (7), 7138-7147, 2021	36	2021
Growth of Ge Nanowires from Au− Cu Alloy Nanoparticle Catalysts Synthesized from Aqueous Solution JG Connell, ZY Al Balushi, K Sohn, J Huang, LJ Lauhon The Journal of Physical Chemistry Letters 1 (23), 3360-3365, 2010	28	2010
Rydberg Excitons and Trions in Monolayer MoTe₂ S Biswas, A Champagne, JB Haber, S Pokawanvit, J Wong, H Akbari, ... ACS nano 17 (8), 7685-7694, 2023	27	2023
Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition A Kozhakhmetov, TH Choudhury, ZY Al Balushi, M Chubarov, ... Journal of Crystal Growth 486, 137-141, 2018	26	2018
The effect of polarity on MOCVD growth of thick InGaN ZY Al Balushi, JM Redwing Applied Physics Letters 110 (2), 022101, 2017	23	2017
Band edge tailoring in few-layer two-dimensional molybdenum sulfide/selenide alloys YR Lin, WH Cheng, MH Richter, JS DuChene, EA Peterson, CM Went, ... The Journal of Physical Chemistry C 124 (42), 22893-22902, 2020	19	2020
Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates D Won, X Weng, ZY Al Balushi, JM Redwing Applied Physics Letters 103 (24), 2013	14	2013
Elucidating the mechanism of large phosphate molecule intercalation through graphene-substrate heterointerfaces J Liang, K Ma, X Zhao, G Lu, J Riffle, CM Andrei, C Dong, T Furkan, ... ACS Applied Materials & Interfaces 15 (40), 47649-47660, 2023	11	2023
Al Balushi, Ke Wang, Ram Krishna Ghosh, Rafael A Y Zakaria Vila, Sarah M. Eichfeld, Joshua D. Caldwell, Xiaoye Qin, Yu-Chuan Lin, Paul …, 2016	11	2016
Visualizing facets asymmetry induced directional movement of cadmium chloride nanomotor J Wan, Q Zhang, J Liang, KC Bustillo, ZY Al Balushi, M Asta, H Zheng Nano Letters 23 (22), 10132-10139, 2023	8	2023
Colorimetric multigas sensor arrays and an artificial olfactory platform for volatile organic compounds H Im, J Choi, H Lee, ZY Al Balushi, DH Park, S Kim ACS sensors 8 (9), 3370-3379, 2023	8	2023
Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si (111) Template Layer Formed by Aluminum‐Induced Crystallization MF Hainey Jr, ZY Al Balushi, K Wang, NC Martin, A Bansal, M Chubarov, ... physica status solidi (RRL)–Rapid Research Letters 12 (3), 1700392, 2018	7	2018
In situ stress measurements during MOCVD growth of thick N-polar InGaN ZY Al Balushi, JM Redwing Journal of Applied Physics 122 (8), 2017	7	2017

Systém momentálne nemôže vykonať operáciu. Skúste to neskôr.

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