| Operation of SiGe HBTs down to 70 mK H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ... IEEE Electron Device Letters 38 (1), 12-15, 2016 | 42 | 2016 |
| Cryogenic characterization of a ferroelectric field-effect-transistor Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan Applied Physics Letters 116 (4), 2020 | 34 | 2020 |
| Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ... IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018 | 32 | 2018 |
| Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ... Physical Review Applied 8 (2), 024015, 2017 | 26 | 2017 |
| Supercapacitor charge redistribution analysis for power management of wireless sensor networks R Chai, H Ying, Y Zhang IET Power Electronics 10 (2), 169-177, 2017 | 15 | 2017 |
| Single-event effects in high-frequency linear amplifiers: Experiment and analysis S Zeinolabedinzadeh, H Ying, ZE Fleetwood, NJH Roche, A Khachatrian, ... IEEE transactions on Nuclear Science 64 (1), 125-132, 2016 | 14 | 2016 |
| Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ... IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018 | 13 | 2018 |
| Single-event effects in a millimeter-wave receiver front-end implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, AC Ulusoy, F Inanlou, H Ying, Y Gong, ... IEEE Transactions on Nuclear Science 64 (1), 536-543, 2016 | 12 | 2016 |
| Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (1), 37-44, 2016 | 12 | 2016 |
| Millimeter-wave SiGe radiometer front end with transformer-based Dicke switch and on-chip calibration noise source M Frounchi, A Alizadeh, H Ying, CT Coen, AJ Gasiewski, JD Cressler IEEE Journal of Solid-State Circuits 56 (5), 1464-1474, 2021 | 11 | 2021 |
| Variability in total-ionizing-dose response of fourth-generation SiGe HBTs JW Teng, A Ildefonso, GN Tzintzarov, H Ying, A Moradinia, PF Wang, X Li, ... IEEE Transactions on Nuclear Science 68 (5), 949-957, 2021 | 11 | 2021 |
| Compact modeling of SiGe HBTs for design of cryogenic control and readout circuits for quantum computing H Ying, SG Rao, JW Teng, M Frounchi, M Müller, X Jin, M Schröter, ... 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020 | 11 | 2020 |
| An investigation of high-temperature (to 300° C) safe-operating-area in a high-voltage complementary SiGe on SOI technology AP Omprakash, H Dao, US Raghunathan, H Ying, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (9), 3748-3755, 2017 | 9 | 2017 |
| Variability of pn junctions and SiGe HBTs at cryogenic temperatures H Ying, JW Teng, US Raghunathan, JP Moody, JD Cressler IEEE Transactions on Electron Devices 68 (3), 987-993, 2021 | 7 | 2021 |
| DC and RF variability of SiGe HBTs operating down to deep cryogenic temperatures H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 7 | 2019 |
| A broadband logarithmic power detector using 130 nm SiGe BiCMOS technology Y Gong, S Lee, H Ying, AP Omprakash, E Gebara, H Gu, C Nicholls, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 7 | 2019 |
| Cryogenic characterization of RF low-noise amplifiers utilizing inverse-mode SiGe HBTs for extreme environment applications I Song, AS Cardoso, H Ying, MK Cho, JD Cressler IEEE Transactions on Device and Materials Reliability 18 (4), 613-619, 2018 | 7 | 2018 |
| Revisiting safe operating area: SiGe HBT aging models for reliability-aware circuit design BR Wier, RP Martinez, US Raghunathan, H Ying, S Zeinolabedinzadeh, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 7 | 2018 |
| Operation of current mirrors in SiGe BiCMOS technology at cryogenic temperatures H Ying, JW Teng, JD Cressler IEEE Transactions on Electron Devices 68 (4), 1439-1445, 2021 | 6 | 2021 |
| On the potential of using SiGe HBTs on SOI to support emerging applications up to 300° C AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ... 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015 | 6 | 2015 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia TechOverená e-mailová adresa na: ece.gatech.edu