Články s príkazom na verejný prístup - Attilio BelmonteĎalšie informácie
Nedostupné nikde: 11
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices
U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ...
Nano letters 14 (5), 2401-2406, 2014
Príkazy: Research Foundation (Flanders)
Understanding the dual nature of the filament dissolution in conductive bridging devices
U Celano, L Goux, A Belmonte, K Opsomer, R Degraeve, C Detavernier, ...
The journal of physical chemistry letters 6 (10), 1919-1924, 2015
Príkazy: Research Foundation (Flanders)
Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
U Celano, G Giammaria, L Goux, A Belmonte, M Jurczak, W Vandervorst
Nanoscale 8 (29), 13915-13923, 2016
Príkazy: Research Foundation (Flanders)
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells
W Devulder, K Opsomer, F Seidel, A Belmonte, R Muller, B De Schutter, ...
ACS applied materials & interfaces 5 (15), 6984-6989, 2013
Príkazy: Research Foundation (Flanders)
Operating-current dependence of the Cu-mobility requirements in oxide-based conductive-bridge RAM
A Belmonte, U Celano, R Degraeve, A Fantini, A Redolfi, W Vandervorst, ...
IEEE Electron Device Letters 36 (8), 775-777, 2015
Príkazy: Research Foundation (Flanders)
Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices
U Celano, L Goux, K Opsomer, A Belmonte, M Iapichino, C Detavernier, ...
Nanoscale 5 (22), 11187-11192, 2013
Príkazy: Research Foundation (Flanders)
Progressive vs. abrupt reset behavior in conductive bridging devices: A C-AFM tomography study
U Celano, L Goux, A Belmonte, G Giammaria, K Opsomer, C Detavernier, ...
2014 IEEE International Electron Devices Meeting, 14.1. 1-14.1. 4, 2014
Príkazy: Research Foundation (Flanders)
Conductive filaments multiplicity as a variability factor in CBRAM
U Celano, L Goux, A Belmonte, K Opsomer, C Detavernier, M Jurczak, ...
2015 IEEE International Reliability Physics Symposium, MY. 11.1-MY. 11.3, 2015
Príkazy: Research Foundation (Flanders)
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
A Belmonte, G Reale, A Fantini, J Radhakrishnan, A Redolfi, W Devulder, ...
Solid-State Electronics 184, 108058, 2021
Príkazy: European Commission
Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays
S Subhechha, S Cosemans, A Belmonte, N Rassoul, SH Sharifi, ...
2023 IEEE International Memory Workshop (IMW), 1-4, 2023
Príkazy: European Commission
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers
Z Guo, EX Zhang, A Chasin, D Linten, A Belmonte, G Kar, RA Reed, ...
IEEE Transactions on Nuclear Science 71 (4), 461-468, 2023
Príkazy: US Department of Defense
Dostupné niekde: 9
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Príkazy: National Natural Science Foundation of China
Conductive-AFM tomography for 3D filament observation in resistive switching devices
U Celano, L Goux, A Belmonte, A Schulze, K Opsomer, C Detavernier, ...
2013 IEEE International Electron Devices Meeting, 21.6. 1-21.6. 4, 2013
Príkazy: Research Foundation (Flanders)
Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices
U Celano, L Goux, K Opsomer, M Iapichino, A Belmonte, A Franquet, ...
Microelectronic engineering 120, 67-70, 2014
Príkazy: Research Foundation (Flanders)
Co active electrode enhances CBRAM performance and scaling potential
A Belmonte, J Radhakrishnan, L Goux, GL Donadio, P Kumbhare, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.8. 1-35.8. 4, 2019
Príkazy: European Commission
Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2RRAM and Their Impacts on RTN Amplitude Distribution
J Ma, Z Chai, WD Zhang, JF Zhang, Z Ji, B Benbakhti, B Govoreanu, ...
IEEE Transactions on Electron Devices 65 (3), 970-977, 2018
Príkazy: UK Engineering and Physical Sciences Research Council
Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells
W Devulder, K Opsomer, A Franquet, J Meersschaut, A Belmonte, ...
Journal of Applied Physics 115 (5), 2014
Príkazy: Research Foundation (Flanders)
Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search
MJ van Setten, HFW Dekkers, C Pashartis, A Chasin, A Belmonte, ...
Materials Advances 3 (23), 8413-8427, 2022
Príkazy: Research Foundation (Flanders)
sub-40mv sigma VTH igzo nFETs in 300mm fab
J Mitard, L Kljucar, N Rassoul, HFW Dekkers, M van Setten, A Chasin, ...
ECS Transactions 98 (7), 205, 2020
Príkazy: European Commission
Switching layer optimization in Co-based CBRAM for >1E5 memory window in sub-100 µA regime
Y Cho, BS Kang, P Kumbhare, R Delhougne, L Nyns, M Mao, L Goux, ...
Solid-State Electronics, 108964, 2024
Príkazy: European Commission
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