| Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes NG Rudawski, BL Darby, BR Yates, KS Jones, RG Elliman, AA Volinsky Applied Physics Letters 100 (8), 2012 | 103 | 2012 |
| Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries NG Rudawski, BR Yates, MR Holzworth, KS Jones, RG Elliman, ... Journal of power sources 223, 336-340, 2013 | 61 | 2013 |
| Insights for void formation in ion-implanted Ge BL Darby, BR Yates, NG Rudawski, KS Jones, A Kontos, RG Elliman Thin Solid Films 519 (18), 5962-5965, 2011 | 54 | 2011 |
| Substrate orientation dependence on the solid phase epitaxial growth rate of Ge BL Darby, BR Yates, I Martin-Bragado, JL Gomez-Selles, RG Elliman, ... Journal of Applied Physics 113 (3), 2013 | 24 | 2013 |
| Anomalous activation of shallow B+ implants in Ge BR Yates, BL Darby, NG Rudawski, KS Jones, DH Petersen, O Hansen, ... Materials Letters 65 (23-24), 3540-3543, 2011 | 21 | 2011 |
| Maximizing electrical activation of ion-implanted Si in In0. 53Ga0. 47As AG Lind, NG Rudawski, NJ Vito, C Hatem, MC Ridgway, R Hengstebeck, ... Applied Physics Letters 103 (23), 2013 | 20 | 2013 |
| Self-implantation energy and dose effects on Ge solid-phase epitaxial growth BL Darby, BR Yates, NG Rudawski, KS Jones, A Kontos Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011 | 15 | 2011 |
| Role of nucleation sites on the formation of nanoporous Ge BR Yates, BL Darby, RG Elliman, KS Jones Applied Physics Letters 101 (13), 2012 | 14 | 2012 |
| Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors EA Douglas, E Bielejec, P Frenzer, BR Yates, SJ Pearton, CF Lo, L Liu, ... Journal of Vacuum Science & Technology B 31 (2), 2013 | 10 | 2013 |
| Activation and thermal stability of ultra-shallow B+-implants in Ge BR Yates, BL Darby, DH Petersen, O Hansen, R Lin, PF Nielsen, ... Journal of Applied Physics 112 (12), 2012 | 8 | 2012 |
| Junction leakage measurements with micro four-point probes R Lin, DH Petersen, F Wang, BR Yates, KS Jones, O Hansen, A Kontos, ... AIP Conference Proceedings 1496 (1), 175-178, 2012 | 4 | 2012 |
| Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge Substrates BL Darby, BR Yates, A Kumar, A Kontos, RG Elliman, KS Jones ECS Transactions 50 (9), 753, 2013 | 3 | 2013 |
| Structures including porous germanium, methods of making, and methods of use thereof KS Jones, BR Yates, BL Darby US Patent App. 14/112,262, 2014 | 2 | 2014 |
| Implantation and activation of ultra-shallow boron in germanium BR Yates University of Florida, 2012 | 2 | 2012 |
| Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge BR Yates, BL Darby, DH Petersen, O Hansen, R Lin, PF Nielsen, ... ECS Transactions 50 (9), 543, 2013 | | 2013 |
| Modeling Solid Phase Epitaxial Growth for Patterned Ge BL Darby, BR Yates, A Kumar, A Kontos, RG Elliman, KS Jones | | 2013 |
| Copy of Effects of 2 MeV Ge% 2B Irradiation on AlGaN/GaN High Electron Mobility Transistors. EA Douglas, ES Bielejec, P Frenzer, B Yates, SJ Pearton, CF Lo, L Liu, ... Proposed for publication in Journal of Vacuum Science and Technology B. 31 …, 2013 | | 2013 |
| Additional information on J. Vac. Sci. Technol. B EA Douglas, E Bielejec, P Frenzer, BR Yates, SJ Pearton J. Vac. Sci. Technol. B 31, 021205, 2013 | | 2013 |
| Effects of 2 MeV Ge+ Irradiation on AlGaN/GaN High Electron Mobility Transistors. ES Bielejec, P Frenzer, B Yates, S Pearton, CF Lo, L Liu, F Ren, TS Kang, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2012 | | 2012 |
| Effect of B+ Flux on the Electrical Activation of Ultra-Shallow B+ Implants in Ge. BL Doyle, BR Yates, BL Darby, DH Petersen, O Hansen, R Lin, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2012 | | 2012 |
Kevin S. JonesProfessor, University of FloridaOverená e-mailová adresa na: eng.ufl.edu