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Fabrizio Roccaforte
Fabrizio Roccaforte
Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi
Overená e-mailová adresa na: imm.cnr.it
Názov
Citované v
Citované v
Rok
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ...
Microelectronic Engineering 187, 66-77, 2017
5122017
Ohmic contacts to Gallium Nitride materials
G Greco, F Iucolano, F Roccaforte
Applied Surface Science 383, 324-345, 2016
3622016
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
F Roccaforte, G Greco, P Fiorenza, F Iucolano
Materials 12 (10), 1599, 2019
2992019
Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni
Journal of Applied Physics 93 (11), 9137-9144, 2003
2912003
Review of technology for normally-off HEMTs with p-GaN gate
G Greco, F Iucolano, F Roccaforte
Materials Science in Semiconductor Processing 78, 96-106, 2018
2892018
Recent advances on dielectrics technology for SiC and GaN power devices
F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...
Applied Surface Science 301, 9-18, 2014
1942014
Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts
F Iucolano, F Roccaforte, F Giannazzo, V Raineri
Journal of Applied Physics 102 (11), 2007
1932007
Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide
F La Via, F Roccaforte, A Makhtari, V Raineri, P Musumeci, L Calcagno
Microelectronic Engineering 60 (1-2), 269-282, 2002
1732002
Challenges for energy efficient wide band gap semiconductor power devices
F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ...
physica status solidi (a) 211 (9), 2063-2071, 2014
1512014
Surface and interface issues in wide band gap semiconductor electronics
F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri
Applied Surface Science 256 (19), 5727-5735, 2010
1282010
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
F Giannazzo, I Deretzis, A La Magna, F Roccaforte, R Yakimova
Physical Review B—Condensed Matter and Materials Physics 86 (23), 235422, 2012
1222012
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri
Journal of applied physics 100 (12), 2006
1182006
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
P Fiorenza, F Giannazzo, F Roccaforte
Energies 12 (12), 2310, 2019
1162019
High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect
A Sciuto, F Roccaforte, S Di Franco, V Raineri, G Bonanno
Applied physics letters 89 (8), 2006
1062006
Ohmic contacts to SiC
F Roccaforte, F La Via, V Raineri
International journal of high speed electronics and systems 15 (04), 781-820, 2005
1062005
Highly reproducible ideal SiC Schottky rectifiers: Effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
F Roccaforte, F La Via, V Raineri, P Musumeci, L Calcagno, ...
Applied Physics A 77, 827-833, 2003
1032003
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte
Applied Physics Letters 103 (15), 2013
1022013
Nanoscale transport properties at silicon carbide interfaces
F Roccaforte, F Giannazzo, V Raineri
Journal of Physics D: Applied Physics 43 (22), 223001, 2010
1012010
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
992017
Vertical transistors based on 2D materials: Status and prospects
F Giannazzo, G Greco, F Roccaforte, SS Sonde
Crystals 8 (2), 70, 2018
952018
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Články 1–20