Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure H Park, SB Kang, B Jin, Y Shin
US Patent App. 11/182,893, 2006
509 2006 Implementation of HfSiON gate dielectric for sub-60nm DRAM dual gate oxide with recess channel array transistor (RCAT) and tungsten gate SG Park, BJ Jin, HL Lee, HB Park, TS Jeon, HJ Cho, SY Kim, SI Jang, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
252 2004 Comparison of HB Park, M Cho, J Park, SW Lee, CS Hwang, JP Kim, JH Lee, NI Lee, ...
Journal of applied physics 94 (5), 3641-3647, 2003
153 2003 Chemical interaction between atomic-layer-deposited M Cho, J Park, HB Park, CS Hwang, J Jeong, KS Hyun
Applied physics letters 81 (2), 334-336, 2002
143 2002 Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf [N (CH3) 2] 4 precursor M Cho, DS Jeong, J Park, HB Park, SW Lee, TJ Park, CS Hwang, ...
Applied physics letters 85 (24), 5953-5955, 2004
106 2004 Thermal annealing effects on the structural and electrical properties of M Cho, HB Park, J Park, CS Hwang, JC Lee, SJ Oh, J Jeong, KS Hyun, ...
Journal of applied physics 94 (4), 2563-2571, 2003
102 2003 Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film KS Kim, H Park, BH Kim, S Kim, J Kwon, J Lee, K Kim, J Lim, G Nam, ...
US Patent 7,396,719, 2008
99 2008 Reasons for obtaining an optical dielectric constant from the Poole–Frenkel conduction behavior of atomic-layer-deposited HfO2 films DS Jeong, HB Park, CS Hwang
Applied Physics Letters 86 (7), 2005
90 2005 Semiconductor device and method of fabricating the same H Hong, SJ Hyun, H Park, H Na, HL Lee
US Patent 8,786,028, 2014
84 2014 High-k properties of atomic-layer-deposited M Cho, HB Park, J Park, SW Lee, CS Hwang, GH Jang, J Jeong
Applied physics letters 83 (26), 5503-5505, 2003
74 2003 Capacitor and method of manufacturing the same H Park
US Patent App. 10/131,475, 2002
69 2002 High dielectric film and related method of manufacture H Park, Y Shin, SB Kang
US Patent 7,521,331, 2009
65 2009 Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes HC Wen, P Majhi, K Choi, CS Park, HN Alshareef, HR Harris, H Luan, ...
Microelectronic Engineering 85 (1), 2-8, 2008
61 2008 Highly manufacturable 45nm LSTP CMOSFETs using novel dual high-k and dual metal gate CMOS integration S Song, Z Zhang, M Hussain, C Huffman, J Barnett, S Bae, H Li, P Majhi, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 13-14, 2006
56 2006 Novel capacitor technology for high density stand-alone and embedded DRAMs YK Kim, SH Lee, SJ Choi, HB Park, YD Seo, KH Chin, D Kim, JS Lim, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
50 2000 Comparison of properties of an Al2O3 thin layers grown with remote O2 plasma, H2O, or O3 as oxidants in an ALD process for HfO2 gate dielectrics M Cho, HB Park, J Park, SW Lee, CS Hwang, J Jeong, HS Kang, YW Kim
Journal of the Electrochemical Society 152 (5), F49, 2005
46 2005 Ferroelectric random access memory device and fabrication method therefor B Kim, H Park
US Patent 6,229,166, 2001
43 2001 SONOS type non-volatile memory devices having a laminate blocking insulation layer and methods of manufacturing the same H Park, Y Shin
US Patent App. 11/505,033, 2007
42 2007 Thermal stability of atomic-layer-deposited M Cho, J Park, HB Park, CS Hwang, J Jeong, KS Hyun, YW Kim, CB Oh, ...
Applied Physics Letters 81 (19), 3630-3632, 2002
36 2002 Understanding noise measurements in MOSFETs: The role of traps structural relaxation D Veksler, G Bersuker, S Rumyantsev, M Shur, H Park, C Young, KY Lim, ...
2010 IEEE International Reliability Physics Symposium, 73-79, 2010
34 2010