Ganesh Balakrishnan

Citované v

	Všetky	Od 2020
Citácie	4641	1468
h-index	36	18
i10-index	103	41

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20052006200720082009201020112012201320142015201620172018201920202021202220232024202514 37 80 121 143 154 230 251 385 267 288 274 282 296 330 261 303 295 275 286 48

Verejný prístup

všetky položky

79 článkov

19 článkov

dostupné

nedostupné

Na základe mandátov na financovanie

Spoluautori

L. Ralph DawsonResearch Professor of ECE, University of New MexicoOverená e-mailová adresa na: chtm.unm.edu
Thomas J RotterCenter for High Technology Materials, The University of New MexicoOverená e-mailová adresa na: chtm.unm.edu
George T. WangSandia National LaboratoriesOverená e-mailová adresa na: sandia.gov
Igal BrenerSenior Scientist, Sandia National LabsOverená e-mailová adresa na: sandia.gov
Alexander R. AlbrechtResearch Associate Professor, Department of Physics and Astronomy, University of New MexicoOverená e-mailová adresa na: unm.edu
Maya Narayanan KuttyPostdoctoral Research Fellow, Centre for High Technology Materials, University of New MexicoOverená e-mailová adresa na: unm.edu
Pankaj AhirwarMicronOverená e-mailová adresa na: micron.com
Huiwen XuPHD, University of New MexicoOverená e-mailová adresa na: unm.edu
Christos ChristodoulouUniversity of New MexicoOverená e-mailová adresa na: unm.edu
S. R. J. BrueckDistinguished Professor of Electical and Computer Engineering, Emeritus, University of New MexicoOverená e-mailová adresa na: chtm.unm.edu
Sanjay KrishnaProfessor and George R Smith Chair of Engineering, ECE Department, Ohio State UniversityOverená e-mailová adresa na: osu.edu
Jeremy B. WrightPrincipal Member of Technical Staff, Sandia National LaboratoriesOverená e-mailová adresa na: sandia.gov
Antonio HurtadoUniversity of StrathclydeOverená e-mailová adresa na: strath.ac.uk
Robert BedfordAir Force Research LaboratoryOverená e-mailová adresa na: us.af.mil
Han HtoonCenter for Integrated Nanotechnologies, Los Alamos National LaboratoryOverená e-mailová adresa na: lanl.gov
Przemyslaw WachulakRector, Professor, Military University of TechnologyOverená e-mailová adresa na: wat.edu.pl
Nassim RahimiPhD Candidate and Research Assistant at University of New MexicoOverená e-mailová adresa na: unm.edu
Patrick E. HopkinsUniversity of VirginiaOverená e-mailová adresa na: virginia.edu
Kalyan NunnaDrOverená e-mailová adresa na: iqep.com
Elena PlisGeorgia Tech Research InstituteOverená e-mailová adresa na: gtri.gatech.edu

Sledovať

Ganesh Balakrishnan

Professor, ECE UNM, Director NM EPSCoR

Overená e-mailová adresa na: unm.edu - Domovská stránka

optoelectronics Lasers material science


Názov Zoradiť podľa citácií Zoradiť podľa roka Zoradiť podľa názvu	Citované v Citované v	Rok
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 2006	327	2006
Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ... Nano letters 18 (11), 6906-6914, 2018	185	2018
Optically pumped frequency reconfigurable antenna design Y Tawk, AR Albrecht, S Hemmady, G Balakrishnan, CG Christodoulou IEEE antennas and wireless propagation letters 9, 280-283, 2010	175	2010
Interfacial misfit array formation for GaSb growth on GaAs S Huang, G Balakrishnan, DL Huffaker Journal of Applied Physics 105 (10), 2009	137	2009
Demonstration of a cognitive radio front end using an optically pumped reconfigurable antenna system (OPRAS) Y Tawk, J Costantine, S Hemmady, G Balakrishnan, K Avery, ... IEEE Transactions on Antennas and Propagation 60 (2), 1075-1083, 2011	135	2011
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ... Applied physics letters 89 (16), 2006	116	2006
wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ... Applied physics letters 84 (12), 2058-2060, 2004	108	2004
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces PE Hopkins, JC Duda, SP Clark, CP Hains, TJ Rotter, LM Phinney, ... Applied Physics Letters 98 (16), 2011	100	2011
Growth mechanisms of highly mismatched AlSb on a Si substrate G Balakrishnan, S Huang, LR Dawson, YC Xin, P Conlin, DL Huffaker Applied Physics Letters 86 (3), 2005	93	2005
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials A Jallipalli, G Balakrishnan, SH Huang, A Khoshakhlagh, LR Dawson, ... Journal of Crystal Growth 303 (2), 449-455, 2007	90	2007
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ... Semiconductor Science and Technology 25 (8), 085010, 2010	89	2010
Single-mode lasing of GaN nanowire-pairs H Xu, JB Wright, TS Luk, JJ Figiel, K Cross, LF Lester, G Balakrishnan, ... Applied Physics Letters 101 (11), 2012	87	2012
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate SH Huang, G Balakrishnan, A Khoshakhlagh, LR Dawson, DL Huffaker Applied Physics Letters 93 (7), 2008	86	2008
Self-Organized Formation of Quantum Rings R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ... Physical review letters 101 (25), 256101, 2008	80	2008
Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ... Applied Physics Letters 90 (26), 2007	73	2007
Selective area growth of InAs quantum dots formed on a patterned GaAs substrate S Birudavolu, N Nuntawong, G Balakrishnan, YC Xin, S Huang, SC Lee, ... Applied physics letters 85 (12), 2337-2339, 2004	71	2004
Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ... Nanoscale research letters 4, 1458-1462, 2009	69	2009
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker Applied Physics Letters 90 (18), 2007	65	2007
Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ... Applied Physics Letters 89 (20), 2006	64	2006
Interplay between total thickness and period thickness in the phonon thermal conductivity of superlattices from the nanoscale to the microscale: Coherent versus incoherent … R Cheaito, CA Polanco, S Addamane, J Zhang, AW Ghosh, ... Physical Review B 97 (8), 085306, 2018	60	2018

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