| Halide perovskite materials for solar cells: a theoretical review WJ Yin, JH Yang, J Kang, Y Yan, SH Wei Journal of Materials Chemistry A 3 (17), 8926-8942, 2015 | 1554 | 2015 |
| Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4 S Chen, JH Yang, XG Gong, A Walsh, SH Wei Physical Review B 81 (24), 245204, 2010 | 985 | 2010 |
| Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation XG Zhao, JH Yang, Y Fu, D Yang, Q Xu, L Yu, SH Wei, L Zhang Journal of the American Chemical Society 139 (7), 2630-2638, 2017 | 874 | 2017 |
| Compositional dependence of structural and electronic properties of Cu 2 ZnSn (S, Se) 4 alloys for thin film solar cells S Chen, A Walsh, JH Yang, XG Gong, L Sun, PX Yang, JH Chu, SH Wei Physical Review B 83 (12), 125201, 2011 | 581 | 2011 |
| Wurtzite-derived polytypes of kesterite and stannite quaternary chalcogenide semiconductors S Chen, A Walsh, Y Luo, JH Yang, XG Gong, SH Wei Physical Review B 82 (19), 195203, 2010 | 385 | 2010 |
| First-principles study on the electronic and optical properties of cubic ABX 3 halide perovskites L Lang, JH Yang, HR Liu, HJ Xiang, XG Gong Physics Letters A 378 (3), 290-293, 2014 | 321 | 2014 |
| Predicting two-dimensional boron–carbon compounds by the global optimization method X Luo, J Yang, H Liu, X Wu, Y Wang, Y Ma, SH Wei, X Gong, H Xiang Journal of the American Chemical Society 133 (40), 16285-16290, 2011 | 290 | 2011 |
| Effective band gap narrowing of anatase TiO2 by strain along a soft crystal direction WJ Yin, S Chen, JH Yang, XG Gong, Y Yan, SH Wei Applied physics letters 96 (22), 2010 | 261 | 2010 |
| Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors YH Li, A Walsh, S Chen, WJ Yin, JH Yang, J Li, JLF Da Silva, XG Gong, ... Applied Physics Letters 94 (21), 2009 | 247 | 2009 |
| Structural diversity and electronic properties of Cu 2 Sn X 3 (X= S, Se): A first-principles investigation YT Zhai, S Chen, JH Yang, HJ Xiang, XG Gong, A Walsh, J Kang, SH Wei Physical Review B 84 (7), 075213, 2011 | 236 | 2011 |
| Defect‐Engineering‐Enabled High‐Efficiency All‐Inorganic Perovskite Solar Cells J Liang, X Han, JH Yang, B Zhang, Q Fang, J Zhang, Q Ai, MM Ogle, ... Advanced Materials 31 (51), 1903448, 2019 | 171 | 2019 |
| Origin of the superior conductivity of perovskite Ba (Sr) SnO3 HR Liu, JH Yang, HJ Xiang, XG Gong, SH Wei Applied Physics Letters 102 (11), 2013 | 169 | 2013 |
| Strong Dzyaloshinskii-Moriya Interaction and Origin of Ferroelectricity in Cu 2 OSeO 3 JH Yang, ZL Li, XZ Lu, MH Whangbo, SH Wei, XG Gong, HJ Xiang Physical review letters 109 (10), 107203, 2012 | 168 | 2012 |
| Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction JH Yang, Y Zhang, WJ Yin, XG Gong, BI Yakobson, SH Wei Nano letters 16 (2), 1110-1117, 2016 | 165 | 2016 |
| Review on first-principles study of defect properties of CdTe as a solar cell absorber JH Yang, WJ Yin, JS Park, J Ma, SH Wei Semiconductor Science and Technology 31 (8), 083002, 2016 | 164 | 2016 |
| Design of I2–II–IV–VI4 Semiconductors through Element Substitution: The Thermodynamic Stability Limit and Chemical Trend C Wang, S Chen, JH Yang, L Lang, HJ Xiang, XG Gong, A Walsh, SH Wei Chemistry of Materials 26 (11), 3411-3417, 2014 | 156 | 2014 |
| Cu 2 Zn (Sn, Ge) Se 4 and Cu 2 Zn (Sn, Si) Se 4 alloys as photovoltaic materials: Structural and electronic properties Q Shu, JH Yang, S Chen, B Huang, H Xiang, XG Gong, SH Wei Physical Review B 87 (11), 115208, 2013 | 120 | 2013 |
| Non-radiative carrier recombination enhanced by two-level process: a first-principles study JH Yang, L Shi, LW Wang, SH Wei Scientific reports 6 (1), 21712, 2016 | 112 | 2016 |
| Lead‐Free Double Perovskite Cs2SnX6: Facile Solution Synthesis and Excellent Stability X Han, J Liang, JH Yang, K Soni, Q Fang, W Wang, J Zhang, S Jia, ... Small 15 (39), 1901650, 2019 | 98 | 2019 |
| Fast self-diffusion of ions in CH 3 NH 3 PbI 3: the interstiticaly mechanism versus vacancy-assisted mechanism JH Yang, WJ Yin, JS Park, SH Wei Journal of Materials Chemistry A 4 (34), 13105-13112, 2016 | 94 | 2016 |
Suhuai WeiEastern Institute of Technology, Ningbo, ChinaOverená e-mailová adresa na: eitech.edu.cn