Saurabh V. Suryavanshi

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Soavtorji

Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACPreverjeni e-poštni naslov na stanford.edu
Connor J. McClellanStanford UniversityPreverjeni e-poštni naslov na stanford.edu
Eilam YalonTechnion, Israel Institute of TechnologyPreverjeni e-poštni naslov na technion.ac.il
Alexander J GabourieDeepSim, Inc.Preverjeni e-poštni naslov na deepsim.io
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Preverjeni e-poštni naslov na csic.es
Amir Barati FarimaniRussell V. Trader Associate Professor at Carnegie Mellon UniversityPreverjeni e-poštni naslov na stanford.edu
Feng XiongAssociate Professor, Department of Electrical and Computer Engineering, University of PittsburghPreverjeni e-poštni naslov na pitt.edu
Christopher M. NeumannIntelPreverjeni e-poštni naslov na intel.com
Runjie (Lily) XuStanford UniversityPreverjeni e-poštni naslov na apple.com
Lucian ShifrenPreverjeni e-poštni naslov na shifren.com
Aditya SoodAssistant Professor, Princeton UniversityPreverjeni e-poštni naslov na stanford.edu
Kenneth E. GoodsonStanford Mechanical Engineering, Davies Provostial ProfessorPreverjeni e-poštni naslov na stanford.edu
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordPreverjeni e-poštni naslov na stanford.edu
Burak AslanAssistant Professor, Bogazici UniversityPreverjeni e-poštni naslov na boun.edu.tr
Sanchit DeshmukhPhD, Stanford UniversityPreverjeni e-poštni naslov na alumni.stanford.edu
Sam VaziriStanford UniversityPreverjeni e-poštni naslov na stanford.edu
Greg YericCerfe LabsPreverjeni e-poštni naslov na cerfelabs.com
Ankush AgarwalFacebookPreverjeni e-poštni naslov na fb.com
Michal Jakub MleczkoDevice Engineer, IntelPreverjeni e-poštni naslov na stanford.edu
Dan DessauUniversity of ColoradoPreverjeni e-poštni naslov na Colorado.edu

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Saurabh V. Suryavanshi

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Preverjeni e-poštni naslov na suryavanshi.me - Domača stran

Semiconductors EDA AI


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Energy Dissipation in Monolayer MoS₂ Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017	243	2017
Low Variability in Synthetic Monolayer MoS₂ Devices KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop ACS nano 11 (8), 8456-8463, 2017	227	2017
High Current Density in Monolayer MoS₂ Doped by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021	219	2021
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices KKH Smithe, CD English, SV Suryavanshi, E Pop 2D Materials 4 (1), 011009, 2016	196	2016
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017	189	2017
High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS₂ KKH Smithe, CD English, SV Suryavanshi, E Pop Nano letters 18 (7), 4516-4522, 2018	163	2018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019	141	2019
S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities SV Suryavanshi, E Pop Journal of Applied Physics 120 (22), 2016	118	2016
Effective n-type doping of monolayer MoS₂ by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017	65	2017
Thermal boundary conductance of two-dimensional MoS2 interfaces SV Suryavanshi, AJ Gabourie, A Barati Farimani, E Pop Journal of Applied Physics 126 (5), 2019	51	2019
Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2 AJ Gabourie, SV Suryavanshi, AB Farimani, E Pop 2D Materials 8 (1), 011001, 2020	46	2020
Real-time* multiple object tracking (MOT) for autonomous navigation A Agarwal, S Suryavanshi Technical report, 2017	26	2017
2D Device Trends CJ McClellan, SV Suryavanshi, CD English, KKH Smithe, CS Bailey, ... unpublished 3, 3824-3830, 2023	16	2023
Physics-based compact model for circuit simulations of 2-dimensional semiconductor devices SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 235-236, 2015	15	2015
Universal non-polar switching in carbon-doped transition metal oxides (TMOs) and post TMOs CA Paz de Araujo, J Celinska, CR McWilliams, L Shifren, G Yeric, ... Apl Materials 10 (4), 2022	8	2022
Enhanced Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices KKH Smithe, CD English, SV Suryavanshi, E Pop arXiv preprint arXiv:1608.00987, 2016	6	2016
Thermal boundary conductance of the MOS₂-SiO₂interface SV Suryavanshi, AJ Gabourie, AB Farimani, E Yalon, E Pop 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), 26-29, 2017	5	2017
Scaling theory of two-dimensional field effect transistors SV Suryavanshi, CD English, HSP Wong, E Pop arXiv preprint arXiv:2105.10791, 2021	4	2021
Stanford 2D Semiconductor (S2DS) Transistor Model SV Suryavanshi, E Pop Version 1.1. 0). nanoHUB. doi: 10.4231/D3ZC7RV9X, 2016	4	2016
High mobility in monolayer MoS₂ devices grown by chemical vapor deposition KKH Smithe, CD English, SV Suryavanshi, E Pop 2015 73rd Annual Device Research Conference (DRC), 239-240, 2015	4	2015

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