| Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ... Nanoscale research letters 10, 1-27, 2015 | 158 | 2015 |
| Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment FY Yuan, N Deng, CC Shih, YT Tseng, TC Chang, KC Chang, MH Wang, ... Nanoscale research letters 12, 1-6, 2017 | 74 | 2017 |
| Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ... IEEE electron device letters 34 (5), 677-679, 2013 | 61 | 2013 |
| Endurance Improvement Technology With Nitrogen Implanted in the Interface of Resistance Switching Device YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ... IEEE electron device letters 34 (7), 864-866, 2013 | 55 | 2013 |
| Characteristics of hafnium oxide resistance random access memory with different setting compliance current YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ... Applied Physics Letters 103 (16), 2013 | 54 | 2013 |
| Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ... IEEE electron device letters 35 (6), 633-635, 2014 | 52 | 2014 |
| Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory YT Tseng, TM Tsai, TC Chang, CC Shih, KC Chang, R Zhang, KH Chen, ... Applied Physics Letters 106 (21), 2015 | 50 | 2015 |
| Performance and characteristics of double layer porous silicon oxide resistance random access memory TM Tsai, KC Chang, R Zhang, TC Chang, JC Lou, JH Chen, TF Young, ... Applied Physics Letters 102 (25), 2013 | 45 | 2013 |
| Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ... Applied Physics Letters 103 (8), 2013 | 44 | 2013 |
| Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ... IEEE electron device letters 34 (5), 617-619, 2013 | 44 | 2013 |
| Galvanic effect of Au–Ag electrodes for conductive bridging resistive switching memory CC Kuo, IC Chen, CC Shih, KC Chang, CH Huang, PH Chen, TC Chang, ... IEEE Electron Device Letters 36 (12), 1321-1324, 2015 | 38 | 2015 |
| The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ... IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018 | 36 | 2018 |
| Hydrogen diffusion and threshold voltage shifts in top-gate amorphous InGaZnO thin-film transistors HC Chen, JJ Chen, KJ Zhou, GF Chen, CW Kuo, YS Shih, WC Su, ... IEEE Transactions on Electron Devices 67 (8), 3123-3128, 2020 | 34 | 2020 |
| Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory YT Tseng, I Chen, TC Chang, JC Huang, CC Shih, HX Zheng, WC Chen, ... Applied Physics Letters 113 (5), 2018 | 34 | 2018 |
| Investigation of the capacitance–voltage electrical characteristics of thin-film transistors caused by hydrogen diffusion under negative bias stress in a moist environment HC Chen, CW Kuo, TC Chang, WC Lai, PH Chen, GF Chen, SP Huang, ... ACS applied materials & interfaces 11 (43), 40196-40203, 2019 | 31 | 2019 |
| Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ... Applied Physics Letters 105 (22), 2014 | 29 | 2014 |
| Improvement of resistive switching characteristics in zinc oxide-based resistive random access memory by ammoniation annealing PY Wu, HX Zheng, CC Shih, TC Chang, WJ Chen, CC Yang, WC Chen, ... IEEE Electron Device Letters 41 (3), 357-360, 2020 | 26 | 2020 |
| Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors YC Chien, TC Chang, HC Chiang, HM Chen, YC Tsao, CC Shih, ... IEEE Electron Device Letters 38 (4), 469-472, 2017 | 25 | 2017 |
| Reducing forming voltage by applying bipolar incremental step pulse programming in a 1T1R structure resistance random access memory HX Zheng, TC Chang, KH Xue, YT Su, CH Wu, CC Shih, YT Tseng, ... IEEE Electron Device Letters 39 (6), 815-818, 2018 | 24 | 2018 |
| Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure YT Tseng, PH Chen, TC Chang, KC Chang, TM Tsai, CC Shih, HC Huang, ... Advanced Electronic Materials 3 (9), 1700171, 2017 | 24 | 2017 |
Kuan-Chang ChangPeking University Shenzhen Graduate SchoolPreverjeni e-poštni naslov na pkusz.edu.cn