Anupam Roy

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Amritesh RaiFront End Process Integration Engineer @ Intel ▪️ UT Austin ▪️ Ohio StatePreverjeni e-poštni naslov na utexas.edu
B N DevProfessor, Centre for Quantum Engineering, Research and EducationPreverjeni e-poštni naslov na tcgcrest.org
Samaresh GuchhaitHoward University, Washington, DCPreverjeni e-poštni naslov na Howard.edu
Tanmoy PramanikIIT Roorkee, Intel Corporation, The University of Texas at AustinPreverjeni e-poštni naslov na ece.iitr.ac.in
Leonard F. RegisterProfessor of Electrical and Computer EngineeringPreverjeni e-poštni naslov na austin.utexas.edu
Emanuel TutucProfessor, The University of Texas at AustinPreverjeni e-poštni naslov na mer.utexas.edu
Sushant SondeUT Austin, CNR-IMM, IMECPreverjeni e-poštni naslov na austin.utexas.edu
Sayema ChowdhuryThe University of Texas at AustinPreverjeni e-poštni naslov na utexas.edu
K BhattacharjeeIndian Institute of Space Science and TechnologyPreverjeni e-poštni naslov na iopb.res.in
Rajib BatabyalUGC-DAE Consortium for Scientific ResearchPreverjeni e-poštni naslov na nbi.ku.dk
Cheng Chih HsiehUniversity of Texas at AustinPreverjeni e-poštni naslov na utexas.edu
Rudresh (Rudy) GhoshUniversity of Texas at AustinPreverjeni e-poštni naslov na rudyghosh.com
Amithraj ValsarajCore Compact Modeling, Intel CorporationPreverjeni e-poštni naslov na utexas.edu
Biswarup SatpatiScientist, Saha Institute of Nuclear Physics, Kolkata, IndiaPreverjeni e-poštni naslov na saha.ac.in
Sai Subrahmanya Teja NibhanupudiYield Development Engineer, Intel CorporationPreverjeni e-poštni naslov na utexas.edu
Jagadish Chandra MahatoDepartment of Physics, Institute of Science, Visva-BharatiPreverjeni e-poštni naslov na visva-bharati.ac.in
Luigi ColomboUniversity of Texas at DallasPreverjeni e-poštni naslov na utdallas.edu
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS FellowPreverjeni e-poštni naslov na ece.utexas.edu
Harry ChouUniversity of Texas at Austin, PulseForge, NovaCentrixPreverjeni e-poštni naslov na utexas.edu
Sangwoo KangIntel CorporationPreverjeni e-poštni naslov na intel.com

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Anupam Roy

The University of Texas at Austin

Preverjeni e-poštni naslov na austin.utexas.edu - Domača stran

Surface and Nano Physics Epitaxial Thin Films and Nano-structures Layered Chalcogenides


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016	246	2016
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015	245	2015
Progress in contact, doping and mobility engineering of MoS2: An atomically thin 2D semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018	167	2018
Two-dimensional weak anti-localization in Bi₂Te₃ thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 163118, 2013	112	2013
Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015	96	2015
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee Applied Physics Letters 109 (22), 223501, 2016	80	2016
Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe₂ K Chen, R Ghosh, X Meng, A Roy, JS Kim, F He, SC Mason, X Xu, JF Lin, ... npj 2D Materials and Applications 1 (1), 15, 2017	73	2017
Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories P Zhuang, W Lin, J Ahn, M Catalano, H Chou, A Roy, M Quevedo‐Lopez, ... Advanced Electronic Materials 6 (1), 1900979, 2020	64	2020
Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS₂ Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ... Advanced Materials 32 (22), 1908311, 2020	58	2020
Ultra-fast switching memristors based on two-dimensional materials SS Teja Nibhanupudi, A Roy, D Veksler, M Coupin, KC Matthews, ... Nature Communications 15 (1), 2334, 2024	56	2024
Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018	46	2018
Characteristics and mechanism study of cerium oxide based random access memories CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee Applied Physics Letters 106 (17), 173108, 2015	45	2015
Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi₂Te₃ R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 223111, 2014	43	2014
Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides K Chen, A Roy, A Rai, HCP Movva, X Meng, F He, SK Banerjee, Y Wang APL Materials 6 (5), 056103, 2018	37	2018
Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies. S Chowdhury, A Roy, I Bodemann, SK Banerjee ACS Applied Materials & Interfaces 12 (13), 15885-15892, 2020	34	2020
Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies S Chowdhury, A Roy, I Bodemann, SK Banerjee ACS Applied Materials & Interfaces 12 (13), 15885-15892, 2020	34	2020
Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy T Pramanik, A Roy, R Dey, A Rai, S Guchhait, HCP Movva, CC Hsieh, ... Journal of Magnetism and Magnetic Materials 437, 72-77, 2017	32	2017
Tailored MoS2 nanorods: a simple microwave assisted synthesis S Reshmi, MV Akshaya, B Satpati, A Roy, PK Basu, K Bhattacharjee Materials Research Express 4 (11), 115012, 2017	30	2017
Interfacial-oxygen-vacancy mediated doping of MoS₂by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015	29	2015
Interfacial-oxygen-vacancy mediated doping of MoS₂by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015	29	2015

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