Francesco La Via

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massimo camardaLaboratory for Micro- and Nanotechnology Paul Scherrer InstitutePreverjeni e-poštni naslov na psi.ch
Ruggero anzaloneSTMicroelectronicsPreverjeni e-poštni naslov na st.com
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiPreverjeni e-poštni naslov na imm.cnr.it
Andrea SeverinoWide bandgap compound semiconductor epitaxy, R&D dept, STMicroelectronicsPreverjeni e-poštni naslov na st.com
Antonino La MagnaCNR IMMPreverjeni e-poštni naslov na imm.cnr.it
Nicolò PilusoSTMicroelectronicsPreverjeni e-poštni naslov na st.com
Corrado BongiornoIstituto per la Microelettronica ed i MicrosistemiPreverjeni e-poštni naslov na imm.cnr.it
Danilo CrippaSenior DirectorPreverjeni e-poštni naslov na vishay.com
Emanuele RiminiCNR-IMM e dipartimento Fisica university of CataniaPreverjeni e-poštni naslov na imm.cnr.it
Giuseppe D'ArrigoCNR-IMMPreverjeni e-poštni naslov na imm.cnr.it
Alessandra AlbertiCNR-IMMPreverjeni e-poštni naslov na imm.cnr.it
stephen edward saddowDepartment of Electrical Engineering, University of South FloridaPreverjeni e-poštni naslov na usf.edu
Massimo ZimboneCNR IMM (sede Università)Preverjeni e-poštni naslov na ct.infn.it
Filippo GiannazzoCNR, Istituto per la Microelettronica e i Microsistemi, Catania, ItalyPreverjeni e-poštni naslov na imm.cnr.it
stefania priviteracataniaPreverjeni e-poštni naslov na cnr.it
Patrick FiorenzaConsiglio Nazionale delle Ricerche - Insituto per la Microelettronica e Microsistemi, Catania ItaliaPreverjeni e-poštni naslov na imm.cnr.it
salvatore di francoCNR IMMPreverjeni e-poštni naslov na imm.cnr.it
Cristiano CalabrettaR&D Power & Discretes, STMicroelectronicsPreverjeni e-poštni naslov na st.com
Andrea CaninoHead of Solar Innovation division @ Enel Green Power spaPreverjeni e-poštni naslov na enel.com
Paolo MusumeciRicercatore di Fisica Applicata, Dipartimento di Fisica ed Astronomia - Catania - ItalyPreverjeni e-poštni naslov na ct.infn.it

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Francesco La Via

CNR-IMM

Preverjeni e-poštni naslov na imm.cnr.it - Domača stran

microelectronics CVD silicide silicon carbide epitaxial growth


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Richardson’s constant in inhomogeneous silicon carbide Schottky contacts F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni Journal of Applied Physics 93 (11), 9137-9144, 2003	290	2003
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay F Cappuzzello, C Agodi, M Cavallaro, D Carbone, S Tudisco, D Lo Presti, ... The European Physical Journal A 54, 1-46, 2018	213	2018
Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide F La Via, F Roccaforte, A Makhtari, V Raineri, P Musumeci, L Calcagno Microelectronic Engineering 60 (1-2), 269-282, 2002	173	2002
Mechanisms of growth and defect properties of epitaxial SiC F La Via, M Camarda, A La Magna Applied physics reviews 1 (3), 2014	156	2014
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction F La Via, A Severino, R Anzalone, C Bongiorno, G Litrico, M Mauceri, ... Materials Science in Semiconductor Processing 78, 57-68, 2018	138	2018
4H SiC epitaxial growth with chlorine addition F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ... Chemical vapor deposition 12 (8‐9), 509-515, 2006	113	2006
Ohmic contacts to SiC F Roccaforte, F La Via, V Raineri International journal of high speed electronics and systems 15 (04), 781-820, 2005	105	2005
Highly reproducible ideal SiC Schottky rectifiers: Effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height F Roccaforte, F La Via, V Raineri, P Musumeci, L Calcagno, ... Applied Physics A 77, 827-833, 2003	103	2003
Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem? F La Via, F Roccaforte, V Raineri, M Mauceri, A Ruggiero, P Musumeci, ... Microelectronic Engineering 70 (2-4), 519-523, 2003	95	2003
Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti Journal of Applied Physics 102 (2), 2007	93	2007
4H-SiC epitaxial layer growth by trichlorosilane (TCS) F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, ... Journal of Crystal Growth 311 (1), 107-113, 2008	85	2008
Improvement of high temperature stability of nickel contacts on n-type 6H–SiC F Roccaforte, F La Via, V Raineri, L Calcagno, P Musumeci Applied surface science 184 (1-4), 295-298, 2001	84	2001
SiCILIA—silicon carbide detectors for intense luminosity investigations and applications S Tudisco, F La Via, C Agodi, C Altana, G Borghi, M Boscardin, ... Sensors 18 (7), 2289, 2018	82	2018
Structural and electrical properties of Ni∕ Ti Schottky contacts on silicon carbide upon thermal annealing F Roccaforte, F La Via, A Baeri, V Raineri, L Calcagno, F Mangano Journal of applied physics 96 (8), 4313-4318, 2004	77	2004
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ... Thin Solid Films 518 (6), S165-S169, 2010	76	2010
High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas M Cutroneo, P Musumeci, M Zimbone, L Torrisi, F La Via, D Margarone, ... Journal of Materials Research 28 (1), 87-93, 2013	74	2013
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier L Calcagno, A Ruggiero, F Roccaforte, F La Via Journal of Applied Physics 98 (2), 2005	73	2005
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ... Journal of Applied Physics 105 (8), 2009	68	2009
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via Journal of Microelectromechanical Systems 20 (3), 745-752, 2011	58	2011
A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures M Camarda, A La Magna, F La Via Journal of Computational Physics 227 (2), 1075-1093, 2007	56	2007

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