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Stephen Bedell
Stephen Bedell
IBM T.J. Watson Research Center
Preverjeni e-poštni naslov na us.ibm.com
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Leto
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 4836, 2014
4472014
Method of preventing surface roughening during hydrogen prebake of SiGe substrates
H Chen, DM Mocuta, RJ Murphy, SW Bedell, DK Sadana
US Patent 6,958,286, 2005
3042005
Layer-resolved graphene transfer via engineered strain layers
J Kim, H Park, JB Hannon, SW Bedell, K Fogel, DK Sadana, ...
Science 342 (6160), 833-836, 2013
2752013
Germanium channel MOSFETs: Opportunities and challenges
H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong
IBM Journal of Research and Development 50 (4.5), 377-386, 2006
2472006
CMOS-integrated high-speed MSM germanium waveguide photodetector
S Assefa, F Xia, SW Bedell, Y Zhang, T Topuria, PM Rice, YA Vlasov
Optics Express 18 (5), 4986-4999, 2010
2422010
Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic
D Shahrjerdi, SW Bedell
Nano letters 13 (1), 315-320, 2013
2312013
Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies
SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ...
IEEE Journal of Photovoltaics 2 (2), 141-147, 2012
2272012
Layer transfer by controlled spalling
SW Bedell, K Fogel, P Lauro, D Shahrjerdi, JA Ott, D Sadana
Journal of Physics D: Applied Physics 46 (15), 152002, 2013
1402013
High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
D Shahrjerdi, SW Bedell, C Ebert, C Bayram, B Hekmatshoar, K Fogel, ...
Applied physics letters 100 (5), 2012
1352012
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011
1282011
Strain scaling for CMOS
SW Bedell, A Khakifirooz, DK Sadana
Mrs Bulletin 39 (2), 131-137, 2014
1182014
Ultralight high-efficiency flexible InGaP/(In) GaAs tandem solar cells on plastic
D Shahrjerdi, SW Bedell, C Bayram, CC Lubguban, K Fogel, P Lauro, ...
Adv. Energy Mater 3 (5), 566-571, 2013
1042013
Investigation of surface blistering of hydrogen implanted crystals
SW Bedell, WA Lanford
Journal of Applied Physics 90 (3), 1138-1146, 2001
872001
Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus
J Kim, SW Bedell, DK Sadana
Applied Physics Letters 98 (8), 2011
832011
Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
SW Bedell, A Majumdar, JA Ott, J Arnold, K Fogel, SJ Koester, DK Sadana
IEEE Electron Device Letters 29 (7), 811-813, 2008
722008
CMOS-integrated 40GHz germanium waveguide photodetector for on-chip optical interconnects
S Assefa, F Xia, SW Bedell, Y Zhang, T Topuria, PM Rice, YA Vlasov
Optical Fiber Communication Conference, OMR4, 2009
662009
Strain engineering in functional materials
G Tsutsui, S Mochizuki, N Loubet, SW Bedell, DK Sadana
AIP Advances 9 (3), 030701, 2019
592019
Layer transfer of bulk gallium nitride by controlled spalling
SW Bedell, P Lauro, JA Ott, K Fogel, DK Sadana
Journal of Applied Physics 122, 025103, 2017
592017
Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm− 3 using coimplantation of Sb and P
J Kim, SW Bedell, SL Maurer, R Loesing, DK Sadana
Electrochemical and Solid-State Letters 13 (1), H12, 2009
592009
Performance enhancement on sub-70 nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate with raised S/D
BH Lee, A Mocuta, S Bedell, H Chen, D Sadana, K Rim, P O'Neil, R Mo, ...
Digest. International Electron Devices Meeting,, 946-948, 2002
582002
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