| Third-order nanocircuit elements for neuromorphic engineering S Kumar, RS Williams, Z Wang Nature 585 (7826), 518-523, 2020 | 303 | 2020 |
| Bipolar resistive switching in polycrystalline TiO2 films K Tsunoda, Y Fukuzumi, JR Jameson, Z Wang, PB Griffin, Y Nishi Applied physics letters 90 (11), 2007 | 264 | 2007 |
| Physical origins of current and temperature controlled negative differential resistances in NbO2 S Kumar, Z Wang, N Davila, N Kumari, KJ Norris, X Huang, JP Strachan, ... Nature communications 8 (1), 658, 2017 | 206 | 2017 |
| Conduction channel formation and dissolution due to oxygen thermophoresis/diffusion in hafnium oxide memristors S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ... ACS nano 10 (12), 11205-11210, 2016 | 126 | 2016 |
| Oxygen migration during resistance switching and failure of hafnium oxide memristors S Kumar, Z Wang, X Huang, N Kumari, N Davila, JP Strachan, D Vine, ... Applied Physics Letters 110 (10), 2017 | 84 | 2017 |
| Nat. Electron. Z Wang, S Joshi, S Savel'Ev, W Song, R Midya, Y Li, MY Rao, P Yan, ... Nat. Electron 1, 582-588, 2018 | 44 | 2018 |
| Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism Z Wang, S Kumar, Y Nishi, HSP Wong Applied Physics Letters 112 (19), 2018 | 38 | 2018 |
| Effect of thermal insulation on the electrical characteristics of NbOx threshold switches Z Wang, S Kumar, HSP Wong, Y Nishi Applied Physics Letters 112 (7), 2018 | 38 | 2018 |
| Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors S Kumar, N Davila, Z Wang, X Huang, JP Strachan, D Vine, ALD Kilcoyne, ... Nanoscale 9 (5), 1793-1798, 2017 | 35 | 2017 |
| Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS) Z Jiang, Z Wang, X Zheng, S Fong, S Qin, HY Chen, C Ahn, J Cao, Y Nishi, ... 2016 IEEE international electron devices meeting (IEDM), 21.3. 1-21.3. 4, 2016 | 19 | 2016 |
| Intrinsic limits of leakage current in self-heating-triggered threshold switches Z Wang, S Kumar, RS Williams, Y Nishi, HSP Wong Applied Physics Letters 114 (18), 2019 | 15 | 2019 |
| Ultrafast accelerated retention test methodology for RRAM using micro thermal stage Z Wang, Z Jiang, X Zheng, S Fong, HY Chen, HSP Wong, Y Nishi IEEE Electron Device Letters 38 (7), 863-866, 2017 | 10 | 2017 |
| G.. L Li, HL Xin, RS Williams, Q. Xia, JJ Yang Z Wang, S Joshi, SE Savel’ev, H Jiang, R Midya, P Lin, M Hu, N Ge, ... Nat. Mater 16, 101, 2017 | 9 | 2017 |
| Savel, ev R Midya, Z Wang, J Zhang SE, 0 | 8 | |
| Fully memristive neural networks for pattern classification with unsupervised learning. Nat. Electron. 1 (2), 137–145 (2018) Z Wang, S Joshi, S Savel’Ev, W Song, R Midya, Y Li, M Rao, P Yan, ... | 7 | |
| Bidirectional analog conductance modulation for RRAM-based neural networks Z Jiang, Z Wang, X Zheng, SW Fong, S Qin, HY Chen, EC Ahn, J Cao, ... IEEE Transactions on Electron Devices 67 (11), 4904-4910, 2020 | 6 | 2020 |
