| Holey graphite: A promising anode material with ultrahigh storage for lithium-ion battery C Yang, X Zhang, J Li, J Ma, L Xu, J Yang, S Liu, S Fang, Y Li, X Sun, ... Electrochimica Acta 346, 136244, 2020 | 63 | 2020 |
| Layer-Dependent Giant Magnetoresistance in Two-Dimensional Magnetic Tunnel Junctions J Yang, S Fang, Y Peng, S Liu, B Wu, R Quhe, S Ding, C Yang, J Ma, ... Physical Review Applied 16 (2), 024011, 2021 | 40 | 2021 |
| Is graphite nanomesh a promising anode for the Na/K-Ions batteries? C Yang, X Sun, X Zhang, J Li, J Ma, Y Li, L Xu, S Liu, J Yang, S Fang, Q Li, ... Carbon 176, 242-252, 2021 | 37 | 2021 |
| Performance limit of ultrathin GaAs transistors Q Li, S Fang, S Liu, L Xu, L Xu, C Yang, J Yang, B Shi, J Ma, J Yang, ... ACS Applied Materials & Interfaces 14 (20), 23597-23609, 2022 | 34 | 2022 |
| Performance Limit of Gate-All-Around Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation S Liu, Q Li, C Yang, J Yang, L Xu, L Xu, J Ma, Y Li, S Fang, B Wu, J Dong, ... Physical Review Applied 18 (5), 054089, 2022 | 24 | 2022 |
| Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors Q Li, C Yang, L Xu, S Liu, S Fang, L Xu, J Yang, J Ma, Y Li, B Wu, R Quhe, ... Advanced Functional Materials 33 (23), 2214653, 2023 | 23 | 2023 |
| Scaling Behavior of Magnetoresistance with the Layer Number in Magnetic Tunnel Junctions B Wu, J Yang, R Quhe, S Liu, C Yang, Q Li, J Ma, Y Peng, S Fang, J Shi, ... Physical Review Applied 17 (3), 034030, 2022 | 16 | 2022 |
| Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors Q Li, L Xu, S Liu, J Yang, S Fang, Y Li, J Ma, Z Zhang, R Quhe, J Yang, ... Advanced Theory and Simulations 4 (2), 2000252, 2021 | 15 | 2021 |
| Monolayer : A promising channel material for sub-5-nm-gate homogeneous CMOS devices Y Li, C Qi, X Zhou, L Xu, Q Li, S Liu, C Yang, S Liu, L Xu, J Dong, S Fang, ... Physical Review Applied 20 (6), 064044, 2023 | 10 | 2023 |
| Ferroelectric-Tunable Photoresponse in α- Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study S Fang, C Yang, Q Li, B Wu, L Xu, S Liu, J Yang, J Ma, J Dong, Y Li, ... Physical Review Applied 19 (2), 024024, 2023 | 10 | 2023 |
| High-Performance Based (x =4 or 5) van der Waals Magnetic Tunnel Junctions B Wu, S Fang, J Yang, S Liu, Y Peng, Q Li, Z Lin, J Shi, W Yang, Z Luo, ... Physical Review Applied 19 (2), 024037, 2023 | 10 | 2023 |
| Layer-Dependent Magnetoresistance and Spin-Transfer Torque in -Based Magnetic Tunnel Junctions B Wu, J Yang, S Liu, S Fang, Z Liu, Z Lin, J Shi, W Yang, Z Luo, C Wang, ... Physical Review Applied 19 (6), 064008, 2023 | 9 | 2023 |
| Polarization tunable bidirectional photoresponse in Van der Waals () ferroelectric diodes S Fang, Q Li, C Yang, B Wu, S Liu, J Yang, J Ma, Z Yang, K Tang, J Lu Physical Review Materials 7 (8), 084412, 2023 | 5 | 2023 |
| Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices L Xu, L Xu, Q Li, S Fang, Y Li, Y Guo, A Wang, R Quhe, YS Ang, J Lu ACS Applied Electronic Materials 6 (1), 426-434, 2023 | 3 | 2023 |
| Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling S Fang, M Wang, X Yang, Z Yang, Q Li, Z Luo, J Lu Physical Review B 109 (19), 195202, 2024 | 2 | 2024 |
| 3D Hierarchical Graphene‐CNT Anode for Sodium‐Ion Batteries: a First‐Principles Assessment J Ma, C Yang, Q Li, S Liu, L Xu, S Fang, X Sun, R Quhe, F Pan, J Lu Advanced Theory and Simulations 5 (10), 2200227, 2022 | 2 | 2022 |
| Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS L Xu, L Zhao, CS Lau, P Zhang, L Xu, Q Li, S Fang, YS Ang, X Sun, J Lu arXiv preprint arXiv:2408.07339, 2024 | 1 | 2024 |
| Light-assisted Néel spin currents in -symmetric antiferromagnetic semiconductors S Fang, B Wu, Q Li, Z Yang, H Du, J Yang, Z Luo, J Lu Physical Review B 109 (8), 085201, 2024 | 1 | 2024 |
| - and -type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors Q Li, T Zheng, L Xu, S Fang, Z Yang, L Xu, Y Li, B Wu, X Yang, R Quhe, ... Physical Review Materials 8 (1), 014603, 2024 | 1 | 2024 |
| Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology X Yang, S Fang, Y Li, Z Yang, Q Li, M Wang, J Lu ACS Applied Nano Materials, 2025 | | 2025 |
linqiang xuPeking universityPreverjeni e-poštni naslov na pku.edu.cn