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Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Yevgeniy PuzyrevData & Applied Scientist, MicrosoftPreverjeni e-poštni naslov na microsoft.com
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraPreverjeni e-poštni naslov na mrl.ucsb.edu
David R HughartSandia National LaboratoriesPreverjeni e-poštni naslov na sandia.gov
Xiao ShenAssociate Professor of Physics, University of MemphisPreverjeni e-poštni naslov na memphis.edu
Matthew BeckChemical and Materials Engineering, University of KentuckyPreverjeni e-poštni naslov na engr.uky.edu
Tania RoyDuke UniversityPreverjeni e-poštni naslov na duke.edu
Leonard FeldmanProfessor of Physics and Materials SciencePreverjeni e-poštni naslov na rutgers.edu
Joseph W. LydingProfessor of Electrical and Computer Engineering, University of IllinoisPreverjeni e-poštni naslov na illinois.edu
Chunguang TangANUPreverjeni e-poštni naslov na anu.edu.au
AG MarinopoulosResearch Associate, Center of Physics, University of CoimbraPreverjeni e-poštni naslov na uc.pt
Arthur H EdwardsSenior Research Physicist, Air Force Research LaboratoryPreverjeni e-poštni naslov na spaceforce.mil
Aldo Di CarloProf. of Opto&Nano-electronics, University of Rome Tor Vergata. Consiglio Nazionale delle RicerchePreverjeni e-poštni naslov na uniroma2.it
Roy MeadeAyar LabsPreverjeni e-poštni naslov na ayarlabs.com
Kalman VargaVanderbilt UniversityPreverjeni e-poštni naslov na vanderbilt.edu
Heejo LeeProfessor of Computer Science, Korea UniversityPreverjeni e-poštni naslov na korea.ac.kr
Vijay KumarDr. Vijay Kumar Foundation and Shiv Nadar UniversityPreverjeni e-poštni naslov na snu.edu.in

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blair tuttle

Penn State Erie; The Behrend College

Preverjeni e-poštni naslov na psu.edu - Domača stran

Applied Quantum Mechanics Microscopic Theory of Materials


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Silicon carbide: A unique platform for metal-oxide-semiconductor physics G Liu, BR Tuttle, S Dhar Applied Physics Reviews 2 (2), 2015	320	2015
Mechanical stability of possible structures of PtN investigated using first-principles calculations SKR Patil, SV Khare, BR Tuttle, JK Bording, S Kodambaka Physical Review B—Condensed Matter and Materials Physics 73 (10), 104118, 2006	216	2006
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ... Journal of Applied Physics 109 (3), 2011	162	2011
Tunneling through ultrathin gate oxides from microscopic models M Städele, BR Tuttle, K Hess Journal of Applied Physics 89 (1), 348-363, 2001	153	2001
Structure, energetics, and vibrational properties of Si-H bond dissociation in silicon B Tuttle, CG Van de Walle Physical review B 59 (20), 12884, 1999	143	1999
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ... IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011	91	2011
Energetics and diffusion of hydrogen in SiO 2 B Tuttle Physical Review B 61 (7), 4417, 2000	85	2000
Atomic state and characterization of nitrogen at the SiC/SiO2 interface Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ... Journal of Applied Physics 115 (3), 2014	80	2014
Diffusion of O vacancies near interfaces: An ab initio investigation C Tang, B Tuttle, R Ramprasad Physical Review B—Condensed Matter and Materials Physics 76 (7), 073306, 2007	75	2007
Defect Interactions ofin: Implications for ELDRS and Latent Interface Trap Buildup BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010	74	2010
Microscopic theory of hydrogen in silicon devices CG Van de Walle, BR Tuttle IEEE Transactions on Electron Devices 47 (10), 1779-1786, 2000	74	2000
Energetics of hydrogen in amorphous silicon: An ab initio study B Tuttle, JB Adams Physical Review B 57 (20), 12859, 1998	70	1998
Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime K Hess, LF Register, B Tuttle, J Lyding, IC Kizilyalli Physica E: Low-dimensional Systems and Nanostructures 3 (1-3), 1-7, 1998	67	1998
Theory of channel hot-carrier degradation in MOSFETs K Hess, LF Register, W McMahon, B Tuttle, O Aktas, U Ravaioli, ... Physica B: Condensed Matter 272 (1-4), 527-531, 1999	64	1999
Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions T Roy, YS Puzyrev, BR Tuttle, DM Fleetwood, RD Schrimpf, DF Brown, ... Applied Physics Letters 96 (13), 2010	62	2010
Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors YS Puzyrev, BR Tuttle, RD Schrimpf, DM Fleetwood, ST Pantelides Applied Physics Letters 96 (5), 2010	62	2010
Reactions of water molecules in silica-based network glasses IG Batyrev, B Tuttle, DM Fleetwood, RD Schrimpf, L Tsetseris, ... Physical review letters 100 (10), 105503, 2008	59	2008
Large excitonic effects in group-IV sulfide monolayers BR Tuttle, SM Alhassan, ST Pantelides Physical Review B 92 (23), 235405, 2015	58	2015
Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption K Hess, B Tuttle, F Register, DK Ferry Applied Physics Letters 75 (20), 3147-3149, 1999	55	1999
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ... IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012	54	2012

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