Luis A. Marqués

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Soavtorji

Lourdes PelazUniversity of ValladolidPreverjeni e-poštni naslov na ele.uva.es
Maria AboyUniversidad de ValladolidPreverjeni e-poštni naslov na tel.uva.es
Pedro LópezUniversity of ValladolidPreverjeni e-poštni naslov na ele.uva.es
Iván Santos Tejido || ORCID: 0000-00...Universidad de ValladolidPreverjeni e-poštni naslov na uva.es
Martin JaraizProfessor, Universidad de ValladolidPreverjeni e-poštni naslov na ele.uva.es
jesus manuel hernandez mangasProfesor Titular, Dpto. Electricidad y Electrónica, Universidad de ValladolidPreverjeni e-poštni naslov na tel.uva.es
Tomas Diaz de la RubiaUniversity of OklahomaPreverjeni e-poštni naslov na ou.edu
J. Emiliano RubioUniversity of ValladolidPreverjeni e-poštni naslov na ele.uva.es
L. EnríquezDpto. E. y Electrónica. Universidad de ValladolidPreverjeni e-poštni naslov na tel.uva.es
Pedro CastrilloUniversidad Católica de Murcia (UCAM)Preverjeni e-poštni naslov na ucam.edu
Yayoi TakamuraUniversity of California, DavisPreverjeni e-poštni naslov na ucdavis.edu
Karim HuetSCREEN Semiconductor Solutions Co., Ltd.Preverjeni e-poštni naslov na screen-lasse.com
Fuccio CRISTIANOLAAS-CNRS Toulouse, FrancePreverjeni e-poštni naslov na laas.fr
Antonino La MagnaCNR IMMPreverjeni e-poštni naslov na imm.cnr.it
Gianluigi BottonMcMaster UniversityPreverjeni e-poštni naslov na mcmaster.ca
Luciano ColomboUniversity of Cagliari (Italy)Preverjeni e-poštni naslov na unica.it
TABATA ToshiyukiWORMSENSING (startup from CEA-Leti)Preverjeni e-poštni naslov na wormsensing.com
Wolfgang WindlProfessor of Materials Science and Engineering, The Ohio State UniversityPreverjeni e-poštni naslov na osu.edu
J. VicenteProfesor de electronicaPreverjeni e-poštni naslov na ele.uva.es
Maryam shayestehUniversity of SouthamptonPreverjeni e-poštni naslov na soton.ac.uk

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Luis A. Marqués

University of Valladolid

Preverjeni e-poštni naslov na ele.uva.es


Naslov Razvrsti po navedbah Razvrsti po letniku Razvrsti po naslovu	Navedeno Navedeno	Leto
Ion-beam-induced amorphization and recrystallization in silicon L Pelaz, LA Marqués, J Barbolla Journal of applied physics 96 (11), 5947-5976, 2004	473	2004
Ion-beam processing of silicon at keV energies: A molecular-dynamics study MJ Caturla, TD de La Rubia, LA Marques, GH Gilmer Physical Review B 54 (23), 16683, 1996	295	1996
Stability of defects in crystalline silicon and their role in amorphization LA Marqués, L Pelaz, J Hernández, J Barbolla, GH Gilmer Physical Review B 64 (4), 045214, 2001	163	2001
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial LA Marqués, L Pelaz, P Castrillo, J Barbolla Physical Review B—Condensed Matter and Materials Physics 71 (8), 085204, 2005	100	2005
Atomistic modeling of amorphization and recrystallization in silicon L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer Applied physics letters 82 (13), 2038-2040, 2003	90	2003
Microscopic description of the irradiation-induced amorphization in silicon LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla Physical review letters 91 (13), 135504, 2003	86	2003
Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study LA Marqués, MJ Caturla, T Díaz de la Rubia, GH Gilmer Journal of applied physics 80 (11), 6160-6169, 1996	63	1996
Modeling of damage generation mechanisms in silicon at energies below the displacement threshold I Santos, LA Marqués, L Pelaz Physical Review B—Condensed Matter and Materials Physics 74 (17), 174115, 2006	58	2006
Front-end process modeling in silicon L Pelaz, LA Marqués, M Aboy, P López, I Santos The European Physical Journal B 72, 323-359, 2009	49	2009
Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ... Applied physics letters 83 (20), 4166-4168, 2003	45	2003
Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy Journal of applied physics 97 (10), 2005	43	2005
The laser annealing induced phase transition in silicon: a molecular dynamics study LA Marqués, L Pelaz, M Aboy, J Barbolla Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004	39	2004
Characterization of octadecaborane implantation into Si using molecular dynamics LA Marqués, L Pelaz, I Santos, VC Venezia Physical Review B—Condensed Matter and Materials Physics 74 (20), 201201, 2006	36	2006
Atomistic analysis of defect evolution and transient enhanced diffusion in silicon M Aboy, L Pelaz, LA Marqués, L Enriquez, J Barbolla Journal of applied physics 94 (2), 1013-1018, 2003	33	2003
An improved molecular dynamics scheme for ion bombardment simulations LA Marques, JE Rubio, M Jaraiz, L Enriquez, J Barbolla Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995	33	1995
Molecular dynamics simulations of damage production by thermal spikes in Ge P López, L Pelaz, I Santos, LA Marqués, M Aboy Journal of Applied Physics 111 (3), 2012	32	2012
The curious case of thin-body Ge crystallization R Duffy, M Shayesteh, B McCarthy, A Blake, M White, J Scully, R Yu, ... Applied Physics Letters 99 (13), 2011	32	2011
Improved atomistic damage generation model for binary collision simulations I Santos, LA Marqués, L Pelaz, P López Journal of Applied Physics 105 (8), 2009	32	2009
Modeling of defects, dopant diffusion and clustering in silicon M Aboy, I Santos, L Pelaz, LA Marqués, P López Journal of Computational Electronics 13, 40-58, 2014	30	2014
Recrystallization of atomically balanced amorphous pockets in Si: A source of point defects LA Marqués, L Pelaz, P López, I Santos, M Aboy Physical Review B—Condensed Matter and Materials Physics 76 (15), 153201, 2007	28	2007

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