| Void-free silicon-wafer-bond strengthening in the 200–400 C range G Kissinger, W Kissinger Sensors and Actuators A: Physical 36 (2), 149-156, 1993 | 144 | 1993 |
| Hydrophilicity of silicon wafers for direct bonding G Kissinger, W Kissinger physica status solidi (a) 123 (1), 185-192, 1991 | 82 | 1991 |
| Analytical modeling of the interaction of vacancies and oxygen for oxide precipitation in RTA treated silicon wafers G Kissinger, J Dabrowski, A Sattler, C Seuring, T Müller, H Richter, ... Journal of the Electrochemical Society 154 (6), H454, 2007 | 60 | 2007 |
| A Method for Studying the Grown‐In Defect Density Spectra in Czochralski Silicon Wafers G Kissinger, D Gräf, U Lambert, H Richter Journal of the Electrochemical Society 144 (4), 1447, 1997 | 60 | 1997 |
| Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals G Kissinger, S Pizzini CRC Press, 2014 | 55 | 2014 |
| Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001) G Kissinger, T Morgenstern, G Morgenstern, H Richter Applied physics letters 66 (16), 2083-2085, 1995 | 49 | 1995 |
| Defects in as-grown silicon and their evolution during heat treatments J Vanhellemont, E Dornberger, J Esfandyari, G Kissinger, MA Trauwaert, ... Materials Science Forum 258, 341-346, 1997 | 40 | 1997 |
| Investigation of the copper gettering mechanism of oxide precipitates in silicon G Kissinger, D Kot, M Klingsporn, MA Schubert, A Sattler, T Müller ECS Journal of Solid State Science and Technology 4 (9), N124, 2015 | 30 | 2015 |
| Analysis of the nucleation kinetics of oxide precipitates in Czochralski silicon G Kissinger, D Kot, J Dabrowski, V Akhmetov, A Sattler, W Von Ammon ECS Transactions 16 (6), 97, 2008 | 28 | 2008 |
| Interaction of oxygen with thermally induced vacancies in Czochralski silicon V Akhmetov, G Kissinger, W Von Ammon Applied Physics Letters 94 (9), 2009 | 27 | 2009 |
| Key influence of the thermal history on process-induced defects in Czochralski silicon wafers G Kissinger, D Gräf, U Lambert, T Grabolla, H Richter Semiconductor science and technology 12 (7), 933, 1997 | 27 | 1997 |
| Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations J Dabrowski, G Kissinger Physical Review B 92 (14), 144104, 2015 | 26 | 2015 |
| Denuded zone formation by conventional and rapid thermal anneals G Kissinger, J Vanhellemont, G Obermeier, J Esfandyari Materials Science and Engineering: B 73 (1-3), 106-110, 2000 | 24 | 2000 |
| IR-LTS a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers G Kissinger, H Richter, J Vanhellemont, C Claeys Institute of Physics Publishing, Philadelphia, PA (United States), 1996 | 24 | 1996 |
| Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography G Kissinger, J Vanhellemont, C Claeys, H Richter Journal of crystal growth 158 (3), 191-196, 1996 | 24 | 1996 |
| Measurement, modelling and simulation of defects in as-grown Czochralski silicon J Vanhellemont, S Senkader, G Kissinger, V Higgs, MA Trauwaert, D Gräf, ... Journal of crystal growth 180 (3-4), 353-362, 1997 | 23 | 1997 |
| Load induced stresses and plastic deformation in 450mm silicon wafers A Fischer, G Kissinger Applied Physics Letters 91 (11), 2007 | 21 | 2007 |
| Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si G Kissinger, J Vanhellemont, U Lambert, D Gräf, E Dornberger, H Richter Journal of The Electrochemical Society 145 (5), L75, 1998 | 21 | 1998 |
| Investigation of the composition of the Si/SiO2 interface in oxide precipitates and oxide layers on silicon by STEM/EELS G Kissinger, MA Schubert, D Kot, T Grabolla ECS Journal of Solid State Science and Technology 6 (7), N54, 2017 | 20 | 2017 |
| Semiconductor wafer composed of monocrystalline silicon and method for producing it T Mueller, G Kissinger, D Kot, A Sattler US Patent 9,458,554, 2016 | 20 | 2016 |
