| Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review J Ji, HM Kwak, J Yu, S Park, JH Park, H Kim, S Kim, S Kim, DS Lee, ... Nano Convergence 10 (1), 19, 2023 | 21 | 2023 |
| Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric JY Yang, SY Oh, MJ Yeom, S Kim, G Lee, K Lee, S Kim, G Yoo IEEE Electron Device Letters 44 (8), 1260-1263, 2023 | 16 | 2023 |
| Heteroepitaxial growth of Ga2O3 thin films on nickel-nanodot-induced buffer layers for solar-blind ultraviolet photodetector applications SY Bae, DE Kim, MS Kong, S Kim, Y Hong, K Heo, S Kim, MS Park Journal of Alloys and Compounds 995, 174811, 2024 | 3 | 2024 |
| Wide-range Threshold Voltage Tunable β-Ga2O3 FETs with a Sputtered AlScN Ferroelectric Gate Dielectric SY Oh, S Kim, G Lee, JH Park, D Jeon, S Kim, G Yoo IEEE Electron Device Letters, 2024 | 3 | 2024 |
| Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors J Ji, JY Yang, S Lee, S Kim, MJ Yeom, G Lee, H Shin, SH Bae, JH Ahn, ... Communications Engineering 3 (1), 15, 2024 | 3 | 2024 |
