| Development of SOI pixel process technology Y Arai, T Miyoshi, Y Unno, T Tsuboyama, S Terada, Y Ikegami, R Ichimiya, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011 | 195 | 2011 |
| Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains V Ferlet-Cavrois, V Pouget, D McMorrow, JR Schwank, N Fel, F Essely, ... IEEE Transactions on Nuclear Science 55 (6), 2842-2853, 2008 | 145 | 2008 |
| Scaling trends of digital single-event effects: A survey of SEU and SET parameters and comparison with transistor performance D Kobayashi IEEE Transactions on Nuclear Science 68 (2), 124-148, 2020 | 95 | 2020 |
| Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains. JR Schwank, PE Dodd, MR Shaneyfelt, V Ferlet-Cavrois, V Pouget, ... IEEE Transactions on Nuclear Science, 2008 | 73 | 2008 |
| Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET D Kobayashi, H Saito, K Hirose IEEE Transactions on Nuclear Science 54 (4), 1037-1041, 2007 | 60 | 2007 |
| Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions D Kobayashi, Y Kakehashi, K Hirose, S Onoda, T Makino, T Ohshima, ... IEEE Transactions on Nuclear Science 61 (4), 1710-1716, 2014 | 58 | 2014 |
| Direct Measurement of SET Pulse Widths in 0.2-m SOI Logic Cells Irradiated by Heavy Ions Y Yanagawa, K Hirose, H Saito, D Kobayashi, S Fukuda, S Ishii, ... IEEE Transactions on Nuclear Science 53 (6), 3575-3578, 2006 | 55 | 2006 |
| LET dependence of single event transient pulse-widths in SOI logic cell T Makino, D Kobayashi, K Hirose, Y Yanagawa, H Saito, H Ikeda, ... IEEE Transactions on Nuclear Science 56 (1), 202-207, 2009 | 47 | 2009 |
| Device-physics-based analytical model for single-event transients in SOI CMOS logic D Kobayashi, K Hirose, V Ferlet-Cavrois, D McMorrow, T Makino, H Ikeda, ... IEEE Transactions on Nuclear Science 56 (6), 3043-3049, 2009 | 46 | 2009 |
| Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method K Motoki, Y Miyazawa, D Kobayashi, M Ikegami, T Miyasaka, T Yamamoto, ... Journal of Applied Physics 121 (8), 2017 | 40 | 2017 |
| Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates D Kobayashi, T Makino, K Hirose 2009 IEEE International Reliability Physics Symposium, 165-169, 2009 | 39 | 2009 |
| High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible pn junctions E Simoen, G Eneman, MB Gonzalez, D Kobayashi, AL Rodríguez, ... Journal of The Electrochemical Society 158 (5), R27, 2011 | 32 | 2011 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 29 | 2016 |
| A new technique for SET pulse width measurement in chains of inverters using pulsed laser irradiation V Ferlet-Cavrois, D McMorrow, D Kobayashi, N Fel, JS Melinger, ... IEEE Transactions on Nuclear Science 56 (4), 2014-2020, 2009 | 28 | 2009 |
| Waveform Observation of Digital Single-Event Transients Employing Monitoring> Transistor Technique D Kobayashi, K Hirose, Y Yanagawa, H Ikeda, H Saito, V Ferlet-Cavrois, ... IEEE Transactions on Nuclear Science 55 (6), 2872-2879, 2008 | 28 | 2008 |
| Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates D Kobayashi, E Simoen, S Put, A Griffoni, M Poizat, K Hirose, C Claeys IEEE Transactions on Nuclear Science 58 (3), 800-807, 2011 | 26 | 2011 |
| Process variation aware analysis of SRAM SEU cross sections using data retention voltage D Kobayashi, N Hayashi, K Hirose, Y Kakehashi, O Kawasaki, T Makino, ... IEEE Transactions on Nuclear Science 66 (1), 155-162, 2018 | 25 | 2018 |
| Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation D Kobayashi, K Hirose, T Makino, S Onoda, T Ohshima, S Ikeda, H Sato, ... Japanese Journal of Applied Physics 56 (8), 0802B4, 2017 | 25 | 2017 |
| Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs D Kobayashi, M Aimi, H Saito, K Hirose IEEE transactions on nuclear science 53 (6), 3372-3378, 2006 | 25 | 2006 |
| Influence of 60-MeV proton-irradiation on standard and strained n-and p-channel MuGFETs PGD Agopian, JA Martino, D Kobayashi, E Simoen, C Claeys IEEE Transactions on Nuclear Science 59 (4), 707-713, 2012 | 24 | 2012 |